Content
– Rapid thermal annealing
– PECVD
Rapid thermal annealing
UntiTEMP UTP-1100 RTA (UniNe)
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- Rapid thermal annealing
- Applications e.g. : Ni/Ge/Au Ohmic contacts annealing
- 75°C/s up to 1000°C
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- Nitrogen and forming gas (5%H2 in N2) atmospheres
- 2″ to 150 mm wafers or squares
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Training :
Gregoire Smolik
PECVD
PlasmaLab 80+ (UniNe)
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- PECVD of SiOx, SiNx, a-Si films
- 13.56MHz driven parallel plate reactor
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- Substrate electrode: 240 mm
- Available gases: N20, NH3, SiH4, N2, CF4, O2
- Materials deposited: SiOx, SiOxNx, SiNx
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Overview of the PlasmaLab80+:
User manual:
Have a look here.
Training :
Raphael Barbey
MANUAL THERMAL EVAPORATOR (UniNe)
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- Home made thermal evaporator
- For expert users only
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- Deposition of thin films transparent in infrared like ZnS, ZnSe
- Deposition of other materials on request (needs process characterization)
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Training :
Grégoire Smolik
