Raith 150 specifications

Content:

I.   Introduction
II.  Specifications
III. Sample holders

Introduction

The Raith 150 e-beam lithography system is working with accelerations volatges from 0.2keV to 30keV. It comes with a 10Mhz pattern generator with minimum dwell time increments of 2ns. The Gemini column can achieve extremely small probe sizes at very low acceleration voltages.

Specifications

Beam size at 1keV (3mm WD) = 3.6 nm

Beamsize at 20keV (3mm WD) = 2 nm

Beam position drift (at +/-0.1°C) = 28.4 nm/h

Stitching accuracy in 100µm write field (mean + 3σ over 150 stitches) = 32.8nm

Smallest feature size (line width) = 19nm

Sample holders

Sample holders are introduced inside the chamber via a loadlock.

5 different sample holders are available:

  • Rotation tilt module (for sample observation)
    rotation tilt
  • Universal sample holder (for small scraps up to 2 inch wafers)
    USHv4
  • 4, 5 and 6 inch electrostatic wafer holder
    4'' electrostatic
  • 8 inch electrostatic chuck
    8'' electrostatic
  • 2, 4, 6 and 8 inch wafer holder
    8'' mechanical