See the complete list of publications on Infoscience
2024
Journal Articles
High-Quality Data Enabling Universality of Band Gap Descriptor and Discovery of Photovoltaic Perovskites
Journal Of The American Chemical Society
2024
DOI : 10.1021/jacs.4c03507
First-principles calculations of defects and electron-phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes
Journal Of Applied Physics
2024
Vol. 135 , num. 15, p. 150901.DOI : 10.1063/5.0205525
Nonempirical semilocal density functionals for correcting the self-interaction of polaronic states
Journal Of Applied Physics
2024
Vol. 135 , num. 13, p. 131101.DOI : 10.1063/5.0197658
Dynamics of the charge transfer to solvent process in aqueous iodide
Nature Communications
2024
Vol. 15 , num. 1, p. 2544.DOI : 10.1038/s41467-024-46772-0
Absolute energy levels of liquid water from many-body perturbation theory with effective vertex corrections
Proceedings Of The National Academy Of Sciences Of The United States Of America
2024
Vol. 121 , num. 10, p. e2311472121.DOI : 10.1073/pnas.2311472121
2023
Journal Articles
Band alignments through quasiparticle self-consistent GW with efficient vertex corrections
Physical Review B
2023
Vol. 108 , num. 24, p. 245303.DOI : 10.1103/PhysRevB.108.245303
2023 Roadmap on molecular modelling of electrochemical energy materials
Journal Of Physics-Energy
2023
Vol. 5 , num. 4, p. 041501.DOI : 10.1088/2515-7655/acfe9b
Range-separated hybrid functionals for accurate prediction of band gaps of extended systems
Npj Computational Materials
2023
Vol. 9 , num. 1, p. 108.DOI : 10.1038/s41524-023-01064-x
Polaron hopping through piecewise-linear functionals
Physical Review B
2023
Vol. 107 , num. 20, p. 205125.DOI : 10.1103/PhysRevB.107.205125
Many-body screening effects in liquid water
Nature Communications
2023
Vol. 14 , num. 1, p. 2705.DOI : 10.1038/s41467-023-38420-w
Theses
Self-Interaction and Polarons in Density Functional Theory
Lausanne: EPFL2023
p. 161.DOI : 10.5075/epfl-thesis-10028
2022
Journal Articles
Hubbard U through polaronic defect states
Npj Computational Materials
2022
Vol. 8 , num. 1, p. 263.DOI : 10.1038/s41524-022-00958-6
Accurate and efficient band-gap predictions for metal halide perovskites at finite temperature
Npj Computational Materials
2022
Vol. 8 , num. 1, p. 237.DOI : 10.1038/s41524-022-00869-6
Oxygen Evolution at the BiVO4-Water Interface: Mechanism of the Water Dehydrogenation Reaction
ACS Catalysis
2022
Vol. 12 , num. 19, p. 11734 – 11742.DOI : https://doi.org/10.1021/acscatal.2c03331
Polarons free from many-body self-interaction in density functional theory
Physical Review B
2022
Vol. 106 , num. 12, p. 125119.DOI : 10.1103/PhysRevB.106.125119
Many-Body Self-Interaction and Polarons
Physical Review Letters
2022
Vol. 129 , num. 12, p. 126401.DOI : 10.1103/PhysRevLett.129.126401
Temperature Dependent Properties of the Aqueous Electron
Angewandte Chemie-International Edition
2022
p. e202209398.DOI : 10.1002/anie.202209398
Atomic-Level Description of Thermal Fluctuations in Inorganic LeadHalide Perovskites
Journal Of Physical Chemistry Letters
2022
Vol. 13 , num. 15, p. 3382 – 3391.DOI : 10.1021/acs.jpclett.2c00281
One-Shot Approach for Enforcing Piecewise Linearity on Hybrid Functionals: Application to Band Gap Predictions
The Journal of Physical Chemistry Letters
2022
Vol. 13 , num. 13, p. 3066 – 3071.DOI : 10.1021/acs.jpclett.2c00414
2021
Journal Articles
Electronic Structure of Water from Koopmans-Compliant Functionals
Journal of Chemical Theory and Computation
2021
Vol. 17 , num. 7, p. 3923 – 3930.DOI : 10.1021/acs.jctc.1c00063
Band gaps of liquid water and hexagonal ice through advanced electronic-structure calculations
Physical Review Research
2021
Vol. 3 , num. 2, p. 023182.DOI : 10.1103/PhysRevResearch.3.023182
Vertex function compliant with the Ward identity for quasiparticle self-consistent calculations beyond GW
Physical Review B
2021
Vol. 103 , num. 16, p. L161104.DOI : 10.1103/PhysRevB.103.L161104
High-performance NiOOH/FeOOH electrode for OER catalysis
The Journal of Chemical Physics
2021
Vol. 154 , num. 2, p. 024706.DOI : 10.1063/5.0036019
Theses
Nonempirical hybrid functionals for advanced electronic-structure calculations
Lausanne: EPFL2021
p. 162.DOI : 10.5075/epfl-thesis-8474
2020
Journal Articles
Evaluation of Photocatalysts for Water Splitting through Combined Analysis of Surface Coverage and Energy-Level Alignment
ACS Catalysis
2020
Vol. 10 , num. 22, p. 13186 – 13195.DOI : 10.1021/acscatal.0c03006
Unraveling the synergy between metal-organic frameworks and co-catalysts in photocatalytic water splitting
Journal Of Materials Chemistry A
2020
Vol. 8 , num. 39, p. 20493 – 20502.DOI : 10.1039/d0ta06028c
Small Electron Polarons in CsPbBr3: Competition between Electron Localization and Delocalization
Chemistry Of Materials
2020
Vol. 32 , num. 19, p. 8393 – 8400.DOI : 10.1021/acs.chemmater.0c02345
Band alignment at beta -Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
Applied Physics Letters
2020
Vol. 117 , num. 10, p. 102103.DOI : 10.1063/5.0020442
Low-Frequency Dielectric Response of Tetragonal Perovskite CH3NH3PbI3
Journal Of Physical Chemistry Letters
2020
Vol. 11 , num. 15, p. 6279 – 6285.DOI : 10.1021/acs.jpclett.0c00418
Accurate optical spectra through time-dependent density functional theory based on screening-dependent hybrid functionals
Physical Review Research
2020
Vol. 2 , num. 3, p. 032019.DOI : 10.1103/PhysRevResearch.2.032019
Finite-size corrections of defect energy levels involving ionic polarization
Physical Review B
2020
Vol. 102 , num. 4, p. 041115.DOI : 10.1103/PhysRevB.102.041115
Hydrogen Bonding of Ammonia with (H,OH)-Si(001) Revealed by Experimental and Ab Initio Photoelectron Spectroscopy
Journal Of Physical Chemistry A
2020
Vol. 124 , num. 26, p. 5378 – 5388.DOI : 10.1021/acs.jpca.0c03458
Band alignment at the CaF2/Si(111) interface through advanced electronic structure calculations
Physical Review B
2020
Vol. 101 , num. 23, p. 235302.DOI : 10.1103/PhysRevB.101.235302
Oxygen evolution reaction: Bifunctional mechanism breaking the linear scaling relationship
Journal Of Chemical Physics
2020
Vol. 152 , num. 10, p. 104712.DOI : 10.1063/1.5143235
On the Electronic and Optical Properties of Metal-Organic Frameworks: Case Study of MIL-125 and MIL-125-NH2
Journal Of Physical Chemistry C
2020
Vol. 124 , num. 7, p. 4065 – 4072.DOI : 10.1021/acs.jpcc.9b09453
Theses
Computational Modeling of the Oxygen Evolution Reaction at Semiconductor-Water Interfaces: A Path Towards Breaking Linear Scaling Relationships
Lausanne: EPFL2020
p. 141.DOI : 10.5075/epfl-thesis-8008
2019
Journal Articles
Nonempirical hybrid functionals for band gaps of inorganic metal-halide perovskites
Physical Review Materials
2019
Vol. 3 , num. 12, p. 123802.DOI : 10.1103/PhysRevMaterials.3.123802
Absolute band alignment at semiconductor-water interfaces using explicit and implicit descriptions for liquid water
Npj Computational Materials
2019
Vol. 5 , p. 100.DOI : 10.1038/s41524-019-0238-4
Picture of the wet electron: a localized transient state in liquid water
Chemical Science
2019
Vol. 10 , num. 31, p. 7442 – 7448.DOI : 10.1039/c8sc05101a
Effect of the Solvent on the Oxygen Evolution Reaction at the TiO2-Water Interface
Journal Of Physical Chemistry C
2019
Vol. 123 , num. 30, p. 18467 – 18474.DOI : 10.1021/acs.jpcc.9b05015
Defect Formation Energies of Interstitial C, Si, and Ge Impurities in beta-Ga2O3
Physica Status Solidi-Rapid Research Letters
2019
Vol. 13 , num. 8, p. 1800633.DOI : 10.1002/pssr.201800633
Reaction pathway of oxygen evolution on Pt(111) revealed through constant Fermi level molecular dynamics
Journal of Catalysis
2019
Vol. 375 , p. 135 – 139.DOI : 10.1016/j.jcat.2019.05.025
Adjustable potential probes for band-gap predictions of extended systems through nonempirical hybrid functionals
Physical Review B
2019
Vol. 99 , num. 20, p. 201114.DOI : 10.1103/PhysRevB.99.201114
Electron and Hole Polarons at the BiVO4-Water Interface
ACS Applied Materials & Interfaces
2019
Vol. 11 , num. 20, p. 18423 – 18426.DOI : 10.1021/acsami.9b03566
Extrinsic Defects in Amorphous Oxides: Hydrogen, Carbon, and Nitrogen Impurities in Alumina
Physical Review Applied
2019
Vol. 11 , num. 2, p. 024040.DOI : 10.1103/PhysRevApplied.11.024040
Oxide versus Nonoxide Cathode Materials for Aqueous Zn Batteries: An Insight into the Charge Storage Mechanism and Consequences Thereof
Acs Applied Materials & Interfaces
2019
Vol. 11 , num. 1, p. 674 – 682.DOI : 10.1021/acsami.8b16284
Theses
Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces
Lausanne: EPFL2019
p. 157.DOI : 10.5075/epfl-thesis-9142
2018
Journal Articles
Reactivity and energy level of a localized hole in liquid water
Physical Chemistry Chemical Physics
2018
Vol. 20 , num. 48, p. 30281 – 30289.DOI : 10.1039/c8cp03682a
Sizable Excitonic Effects Undermining the Photocatalytic Efficiency of beta-Cu2V2O7
Journal Of Physical Chemistry Letters
2018
Vol. 9 , num. 19, p. 5698 – 5703.DOI : 10.1021/acs.jpclett.8b02323
Mechanism suppressing charge recombination at iodine defects in CH3NH3PbI3 by polaron formation
Journal Of Materials Chemistry A
2018
Vol. 6 , num. 35, p. 16863 – 16867.DOI : 10.1039/c8ta06466k
Absolute Energy Levels of Liquid Water
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
2018
Vol. 9 , num. 12, p. 3212 – 3216.DOI : 10.1021/acs.jpclett.8b00891
Alignment of Redox Levels at Semiconductor-Water Interfaces
CHEMISTRY OF MATERIALS
2018
Vol. 30 , num. 1, p. 94 – 111.DOI : 10.1021/acs.chemmater.7b02619
Hole diffusion across leaky amorphous TiO2 coating layers for catalytic water splitting at photoanodes
JOURNAL OF MATERIALS CHEMISTRY A
2018
Vol. 6 , num. 25, p. 11804 – 11810.DOI : 10.1039/c8ta02179a
Partial vibrational density of states for amorphous solids from inelastic neutron scattering
Physical Review B
2018
Vol. 98 , num. 6, p. 064205.DOI : 10.1103/PhysRevB.98.064205
Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”
Physical Review Letters
2018
Vol. 120 , num. 3, p. 039603.DOI : 10.1103/PhysRevLett.120.039603
Surface Polarons Reducing Overpotentials in the Oxygen Evolution Reaction
ACS CATALYSIS
2018
Vol. 8 , num. 7, p. 5847 – 5851.DOI : 10.1021/acscatal.8b01120
Role of Polarons in Water Splitting: The Case of BiVO4
ACS ENERGY LETTERS
2018
Vol. 3 , num. 7, p. 1693 – 1697.DOI : 10.1021/acsenergylett.8b00938
pH-Dependent Surface Chemistry from First Principles: Application to the BiVO4(010)-Water Interface
ACS APPLIED MATERIALS AND INTERFACES
2018
Vol. 10 , num. 12, p. 10011 – 10021.DOI : 10.1021/acsami.7b16545
pH-Dependent Catalytic Reaction Pathway for Water Splitting at the BiVO4-Water Interface from the Band Alignment
ACS ENERGY LETTERS
2018
Vol. 3 , num. 4, p. 829 – 834.DOI : 10.1021/acsenergylett.8b00104
Organic Cathode for Aqueous Zn-Ion Batteries: Taming a Unique Phase Evolution toward Stable Electrochemical Cycling
CHEMISTRY OF MATERIALS
2018
Vol. 30 , num. 11, p. 3874 – 3881.DOI : 10.1021/acs.chemmater.8b01317
Nonempirical dielectric-dependent hybrid functional with range separation for semiconductors and insulators
Physical Review Materials
2018
Vol. 2 , num. 7, p. 073803.DOI : 10.1103/PhysRevMaterials.2.073803
Nonempirical hybrid functionals for band gaps and polaronic distortions in solids
Physical Review B
2018
Vol. 97 , num. 12, p. 121112(R).DOI : 10.1103/PhysRevB.97.121112
Origin of low electron-hole recombination rate in metal halide perovskites
ENERGY AND ENVIRONMENTAL SCIENCE
2018
Vol. 11 , num. 1, p. 101 – 105.DOI : 10.1039/c7ee01981e
Atomic-Scale Simulation of Electrochemical Processes at Electrode/Water Interfaces under Referenced Bias Potential
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
2018
Vol. 9 , num. 8, p. 1880 – 1884.DOI : 10.1021/acs.jpclett.8b00573
2017
Journal Articles
Note: Assessment of the SCAN+rVV10 functional for the structure of liquid water
Journal Of Chemical Physics
2017
Vol. 147 , num. 21, p. 216101.DOI : 10.1063/1.5006146
Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces
Applied Physics Letters
2017
Vol. 110 , num. 11, p. 111602.DOI : 10.1063/1.4977980
Oxygen DX center in In0.17Al0.83N: Nonradiative recombination and persistent photoconductivity
Applied Physics Letters
2017
Vol. 110 , num. 7, p. 072101.DOI : 10.1063/1.4975934
Predictive Determination of Band Gaps of Inorganic Halide Perovskites
The Journal of Physical Chemistry Letters
2017
Vol. 8 , num. 22, p. 5507 – 5512.DOI : 10.1021/acs.jpclett.7b02648
Comprehensive modeling of the band gap and absorption spectrum of BiVO4
Physical Review Materials
2017
Vol. 1 , num. 2, p. 022401.DOI : 10.1103/PhysRevMaterials.1.022401
Partial Molar Volumes of Aqua Ions from First Principles
Journal Of Chemical Theory And Computation
2017
Vol. 13 , num. 8, p. 3427 – 3431.DOI : 10.1021/acs.jctc.7b00474
Accuracy of GW for calculating defect energy levels in solids
Physical Review B
2017
Vol. 96 , num. 2, p. 020101.DOI : 10.1103/PhysRevB.96.020101
Electronic Levels of Excess Electrons in Liquid Water
Journal Of Physical Chemistry Letters
2017
Vol. 8 , num. 9, p. 2055 – 2059.DOI : 10.1021/acs.jpclett.7b00699
Redox Levels through Constant Fermi-Level ab Initio Molecular Dynamics
Journal Of Chemical Theory And Computation
2017
Vol. 13 , num. 4, p. 1769 – 1777.DOI : 10.1021/acs.jctc.6b01232
Migration of Mg and other interstitial metal dopants in GaN
Physica Status Solidi-Rapid Research Letters
2017
Vol. 11 , num. 7, p. 1700081.DOI : 10.1002/pssr.201700081
Electronic and structural characterization of barrier-type amorphous aluminium oxide
Electrochimica Acta
2017
Vol. 224 , p. 503 – 516.DOI : 10.1016/j.electacta.2016.12.090
Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs
Physical Review Applied
2017
Vol. 8 , num. 1, p. 014010.DOI : 10.1103/PhysRevApplied.8.014010
2016
Journal Articles
Self-compensation due to point defects in Mg-doped GaN
Physical Review B
2016
Vol. 93 , num. 16, p. 165207.DOI : 10.1103/PhysRevB.93.165207
Giant apparent lattice distortions in STM images of corrugated sp2-hybridised monolayers
New Journal of Physics
2016
Vol. 18 , num. 10, p. 103027.DOI : 10.1088/1367-2630/18/10/103027
Oxygen defects in amorphous Al2O3: A hybrid functional study
Applied Physics Letters
2016
Vol. 109 , num. 6, p. 062903.DOI : 10.1063/1.4961125
Ab initio Electronic Structure of Liquid Water
Physical Review Letters
2016
Vol. 117 , p. 186401.DOI : 10.1103/PhysRevLett.117.186401
Liquid Water through Density-Functional Molecular Dynamics: Plane-Wave vs Atomic-Orbital Basis Sets
Journal Of Chemical Theory And Computation
2016
Vol. 12 , num. 8, p. 3456 – 3462.DOI : 10.1021/acs.jctc.6b00271
Structural, Dynamical, and Electronic Properties of Liquid Water: A Hybrid Functional Study
Journal Of Physical Chemistry B
2016
Vol. 120 , num. 30, p. 7456 – 7470.DOI : 10.1021/acs.jpcb.6b03876
Absolute deformation potentials of two-dimensional materials
Physical Review B
2016
Vol. 94 , num. 24, p. 245411.DOI : 10.1103/PhysRevB.94.245411
Oxygen defects in GaAs: A hybrid functional study
Physical Review B
2016
Vol. 93 , num. 12, p. 125208.DOI : 10.1103/PhysRevB.93.125208
2015
Journal Articles
Arsenic related defect states resonant with the semiconductor conduction band at the In0.53Ga0.47As/oxide interface: A density functional study
Microelectronic Engineering
2015
Vol. 147 , p. 260 – 263.DOI : 10.1016/j.mee.2015.04.117
Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study
Physical Review B
2015
Vol. 92 , num. 12, p. 125304.DOI : 10.1103/PhysRevB.92.125304
Interfacial Ga-As suboxide: Structural and electronic properties
Applied Physics Letters
2015
Vol. 107 , num. 3, p. 031605.DOI : 10.1063/1.4927311
Isobaric first-principles molecular dynamics of liquid water with nonlocal van der Waals interactions
Journal of Chemical Physics
2015
Vol. 142 , num. 3, p. 034501.DOI : 10.1063/1.4905333
Accurate band gaps of extended systems via efficient vertex corrections in GW
Physical Review B
2015
Vol. 92 , num. 4, p. 041115.DOI : 10.1103/PhysRevB.92.041115
Band alignment and chemical bonding at the GaAs/Al2O3 interface: A hybrid functional study
Applied Physics Letters
2015
Vol. 107 , num. 21, p. 211601.DOI : 10.1063/1.4936240
Energetics of native point defects in GaN: A density-functional study
Microelectronic Engineering
2015
Vol. 147 , p. 51 – 54.DOI : 10.1016/j.mee.2015.04.015
Reviews
First-principles determination of defect energy levels through hybrid density functionals and GW
Journal Of Physics-Condensed Matter
2015
Vol. 27 , num. 13, p. 133202.DOI : 10.1088/0953-8984/27/13/133202
Theses
Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects
Lausanne: EPFL2015
p. 134.DOI : 10.5075/epfl-thesis-6898
2014
Journal Articles
Minimum energy path and atomistic mechanism of the elementary step in oxygen diffusion in silicon: A density-functional study
Physical Review B
2014
Vol. 89 , num. 24, p. 245306.DOI : 10.1103/PhysRevB.89.245306
Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond
Applied Surface Science
2014
Vol. 291 , p. 16 – 19.DOI : 10.1016/j.apsusc.2013.07.150
Intercalation of H at the graphene/SiC(0001) interface: Structure and stability from first principles
Applied Surface Science
2014
Vol. 291 , p. 64 – 68.DOI : 10.1016/j.apsusc.2013.09.031
The O-As defect in GaAs: A hybrid density functional study
Applied Surface Science
2014
Vol. 291 , p. 6 – 10.DOI : 10.1016/j.apsusc.2013.09.063
Infrared spectra of jennite and tobermorite from first-principles
Cement And Concrete Research
2014
Vol. 60 , p. 11 – 23.DOI : 10.1016/j.cemconres.2014.03.004
Band-edge positions in GW: Effects of starting point and self-consistency
Physical Review B
2014
Vol. 90 , num. 16, p. 165133.DOI : 10.1103/PhysRevB.90.165133
Origin of Fermi-level pinning at GaAs surfaces and interfaces
Journal Of Physics-Condensed Matter
2014
Vol. 26 , num. 49, p. 492202.DOI : 10.1088/0953-8984/26/49/492202
Band offsets of lattice-matched semiconductor heterojunctions through hybrid functionals and G(0)W(0)
Physical Review B
2014
Vol. 89 , num. 20, p. 205309.DOI : 10.1103/PhysRevB.89.205309
2013
Journal Articles
Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles study
Microelectronic Engineering
2013
Vol. 109 , p. 60 – 63.DOI : 10.1016/j.mee.2013.03.053
Amphoteric defects in GaAs leading to Fermi-level pinning: A hybrid functional study
Microelectronic Engineering
2013
Vol. 109 , p. 50 – 53.DOI : 10.1016/j.mee.2013.03.068
Finite-Size Supercell Correction for Charged Defects at Surfaces and Interfaces
Physical Review Letters
2013
Vol. 110 , num. 9, p. 095505.DOI : 10.1103/PhysRevLett.110.095505
Correspondence of defect energy levels in hybrid density functional theory and many-body perturbation theory
Physical Review B
2013
Vol. 88 , num. 11, p. 115104.DOI : 10.1103/PhysRevB.88.115104
Assignment of Fermi-level pinning and optical transitions to the (As-Ga)(2)-O-As center in oxygen-doped GaAs
Applied Physics Letters
2013
Vol. 103 , num. 14, p. 142108.DOI : 10.1063/1.4824309
First-principles study of H adsorption on graphene/SiC(0001)
Physica Status Solidi B-Basic Solid State Physics
2013
Vol. 250 , num. 12, p. 2523 – 2528.DOI : 10.1002/pssb.201300084
Accurate determination of charge transition levels of the As-As dimer defect at GaAs/oxide interfaces through hybrid functionals
Applied Physics Letters
2013
Vol. 103 , num. 4, p. 041602.DOI : 10.1063/1.4816661
First principles study of As 2p core-level shifts at GaAs/Al2O3 interfaces
Applied Physics Letters
2013
Vol. 102 , num. 20, p. 201607.DOI : 10.1063/1.4807730
2012
Journal Articles
Finite-size supercell correction schemes for charged defect calculations
Physical Review B
2012
Vol. 86 , num. 4, p. 045112.DOI : 10.1103/PhysRevB.86.045112
Germanium core-level shifts at Ge/GeO2 interfaces through hybrid functionals
Physical Review B
2012
Vol. 85 , p. 245305.DOI : 10.1103/PhysRevB.85.245305
Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals
Journal of Physics: Condensed Matter
2012
Vol. 24 , num. 4, p. 045801.DOI : 10.1088/0953-8984/24/4/045801
Band-edge levels in semiconductors and insulators: Hybrid density functional theory versus many-body perturbation theory
Physical Review B
2012
Vol. 86 , p. 035134.DOI : 10.1103/PhysRevB.86.035134
Low-strain interface models for epitaxial graphene on SiC(0001)
Diamond And Related Materials
2012
Vol. 23 , p. 178 – 183.DOI : 10.1016/j.diamond.2011.11.001
Carbon rehybridization at the graphene/SiC(0001) interface: Effect on stability and atomic-scale corrugation
Physical Review B
2012
Vol. 85 , num. 16, p. 161405(R).DOI : 10.1103/PhysRevB.85.161405
Conference Papers
First principles study of electronic and structural properties of the Ge/GeO2 interface
Physica B-Condensed Matter
2012
26th International Conference on Defects in Semiconductors (ICDS), Nelson, NEW ZEALAND, Jul 18-22, 2011.p. 2926 – 2931
DOI : 10.1016/j.physb.2011.08.037
Medium range structure of tetrahedrally-bonded glasses through the first principles investigation of Raman spectra.
AIP Conference Proceedings
2012
ICCMSE : Seventh International Conference of Computational Methods in Sciences and Engineering, Greece, September 29th – October 4th, 2009.p. 953 – 956
DOI : 10.1063/1.4771854
Comparison between various finite-size supercell correction schemes for charged defect calculations
Physica B-Condensed Matter
2012
26th International Conference on Defects in Semiconductors (ICDS), Nelson, NEW ZEALAND, Jul 18-22, 2011.p. 3063 – 3067
DOI : 10.1016/j.physb.2011.08.028
Stability of valence alternation pairs across the substoichiometric region at Ge/GeO2 interfaces
Physica B-Condensed Matter
2012
26th International Conference on Defects in Semiconductors (ICDS), Nelson, NEW ZEALAND, Jul 18-22, 2011.p. 2939 – 2942
DOI : 10.1016/j.physb.2011.08.075
Intrinsic defects in GaAs and In GaAs through hybrid functional calculations
Physica B-Condensed Matter
2012
26th International Conference on Defects in Semiconductors (ICDS), Nelson, NEW ZEALAND, Jul 18-22, 2011.p. 2833 – 2837
DOI : 10.1016/j.physb.2011.08.030
Theses
Electronic and Structural Properties of the Ge/GeO2 Interface through Hybrid Functionals
Lausanne: EPFL2012
p. 141.DOI : 10.5075/epfl-thesis-5363
2011
Journal Articles
Defect levels through hybrid density functionals: Insights and applications
Physica Status Solidi B-Basic Solid State Physics
2011
Vol. 248 , p. 775 – 789.DOI : 10.1002/pssb.201046195
Band-edge problem in the theoretical determination of defect energy levels: The O vacancy in ZnO as a benchmark case
Physical Review B
2011
Vol. 84 , num. 12, p. 125206.DOI : 10.1103/PhysRevB.84.125206
Band offsets at the Ge/GeO2 interface through hybrid density functionals (vol 94, 141911, 2009)
Applied Physics Letters
2011
Vol. 98 , num. 12, p. 129901.DOI : 10.1063/1.3571449
Assessing the accuracy of hybrid functionals in the determination of defect levels: Application to the As antisite in GaAs
Physical Review B
2011
Vol. 84 , num. 7, p. 075207.DOI : 10.1103/PhysRevB.84.075207
Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO2 interface through hybrid functionals
Physical Review B
2011
Vol. 84 , p. 235320.DOI : 10.1103/PhysRevB.84.235320
Vibrational properties of vitreous GeSe2 with the Becke-Lee-Yang-Parr density functional
Journal of Physics-Condensed Matter
2011
Vol. 23 , p. 295401.DOI : 10.1088/0953-8984/23/29/295401
Structural Composition of First-Neighbor Shells in GeSe2 and GeSe4 Glasses from a First-Principles Analysis of NMR Chemical Shifts
Journal of Physical Chemistry C
2011
Vol. 115 , p. 7755 – 7759.DOI : 10.1021/jp201345e
Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals
Physical Review B
2011
Vol. 83 , num. 19, p. 195319.DOI : 10.1103/PhysRevB.83.195319
Conference Papers
Electron density of states at Ge/oxide interfaces due to GeOx formation
Microelectronic Engineering
2011
EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices – The Role of Ge and III-V Materials, Strasbourg, FRANCE, Jun 07-11, 2010.p. 391 – 394
DOI : 10.1016/j.mee.2010.09.006
Band offsets at Ge/GeO2 interfaces: Effect of different interfacial bonding patterns
Microelectronic Engineering
2011
17th International Conference on Insultating Films on Semiconductors, Grenoble, FRANCE, Jun 21-24, 2011.p. 1467 – 1470
DOI : 10.1016/j.mee.2011.03.047
Charge trapping in substoichiometric germanium oxide
Microelectronic Engineering
2011
17th International Conference on Insultating Films on Semiconductors, Grenoble, FRANCE, Jun 21-24, 2011.p. 1428 – 1431
DOI : 10.1016/j.mee.2011.03.133
Identification of defect levels at InxGa1-xAs/oxide interfaces through hybrid functionals
Microelectronic Engineering
2011
17th International Conference on Insultating Films on Semiconductors, Grenoble, FRANCE, Jun 21-24, 2011.p. 1436 – 1439
DOI : 10.1016/j.mee.2011.03.081
Stability and charge transfer at the interface between SiC(0001) and epitaxial graphene
Microelectronic Engineering
2011
17th International Conference on Insultating Films on Semiconductors, Grenoble, FRANCE, Jun 21-24, 2011.p. 1478 – 1481
DOI : 10.1016/j.mee.2011.03.138
Books
Advanced Calculations for Defects in Materials
Wiley, Weinheim, 2011.2010
Journal Articles
Electron trapping in substoichiometric germanium oxide
Applied Physics Letters
2010
Vol. 97 , num. 9, p. 092903.DOI : 10.1063/1.3486175
First-principles investigation of the relation between structural and NMR parameters in vitreous GeO2
Journal Of Physics-Condensed Matter
2010
Vol. 22 , p. 145501.DOI : 10.1088/0953-8984/22/14/145501
Alignment of defect levels and band edges through hybrid functionals: Effect of screening in the exchange term
Physical Review B
2010
Vol. 81 , num. 20, p. 205118.DOI : 10.1103/PhysRevB.81.205118
Dangling bond charge transition levels in AlAs, GaAs, and InAs
Applied Physics Letters
2010
Vol. 97 , num. 19, p. 191901.DOI : 10.1063/1.3515422
Charge transition levels of nitrogen dangling bonds at Si/SiO2 interfaces: A first-principles study
Physical Review B
2010
Vol. 81 , p. 085331.DOI : 10.1103/PhysRevB.81.085331
Metal adatoms on graphene and hexagonal boron nitride: Towards rational design of self-assembly templates
Physical Review B
2010
Vol. 82 , num. 4, p. 045407.DOI : 10.1103/PhysRevB.82.045407
Structural assignments of NMR chemical shifts in GexSe1-x glasses via first-principles calculations for GeSe2, Ge4Se9, and GeSe crystals
Physical Review B
2010
Vol. 82 , num. 2, p. 020202(R).DOI : 10.1103/PhysRevB.82.020202
Formation of substoichiometric GeOx at the Ge-HfO2 interface
Applied Physics Letters
2010
Vol. 97 , num. 20, p. 202908.DOI : 10.1063/1.3518491
Conference Papers
Metal catalyst in CVD growth of carbon nanotubes: role of chemical composition
AIP Conference Proceedings
2010
29th International Conference on the Physics of Semiconductors (ICPS), 27 July–1 August 2009.DOI : 10.1063/1.3295548
A hybrid functional scheme for defect levels and band alignments at semiconductor-oxide interfaces
Physica Status Solidi A-Applications And Materials Science
2010
12th International Conference on Formation of Semiconductor Interfaces – From Semiconductor to Nanoscience and Applications with Biology, Weimar, GERMANY, Jul 05-10, 2009.p. 270 – 276
DOI : 10.1002/pssa.200982444
Alignment of defect energy levels at the Si-SIO2 interface from hybrid density functional calculations
AIP Conference Proceedings
2010
29th International Conference on the Physics of Semiconductors (ICPS), 27 July–1 August 2009.DOI : 10.1063/1.3295562
Defect levels of the Ge dangling bond defect
AIP Conference Proceedings
2010
29th International Conference on the Physics of Semiconductors (ICPS), 27 July–1 August 2009.DOI : 10.1063/1.3295564
Energy levels of candidate defects at SiC/SiO$_2$ interfaces
AIP Conference Proceedings
2010
29th International Conference on the Physics of Semiconductors (ICPS), 27 July–1 August 2009.DOI : 10.1063/1.3295319
2009
Journal Articles
A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion
Physical Review B
2009
Vol. 80 , num. 19, p. 195205.DOI : 10.1103/PhysRevB.80.195205
Medium-range structure of vitreous SiO2 obtained through first-principles investigation of vibrational spectra
Physical Review B
2009
Vol. 79 , num. 6, p. 064202.DOI : 10.1103/PhysRevB.79.064202
Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride
Physical Review B
2009
Vol. 80 , num. 3, p. 035408.DOI : 10.1103/PhysRevB.80.035408
Li-related defects in ZnO : hybrid functional calculations
Physica B: Condensed Matter
2009
Vol. 404 , num. 23-24, p. 4797 – 4799.DOI : 10.1016/j.physb.2009.08.165
First principles study of substoichiometric germanium oxides
Microelectronic Engineering
2009
Vol. 86 , num. 7-9, p. 1760 – 1762.DOI : 10.1016/j.mee.2009.03.101
Hybrid-functional calculations with plane-wave basis sets: Effect of singularity correction on total energies, energy eigenvalues, and defect energy levels
Physical Review B
2009
Vol. 80 , num. 8, p. 085114.DOI : 10.1103/PhysRevB.80.085114
Atomistic model structure of the Ge(100)-GeO2 interface
Microelectronic Engineering
2009
Vol. 86 , num. 7-9, p. 1589 – 1591.DOI : 10.1016/j.mee.2009.03.087
Band offsets at the Ge/GeO2 interface through hybrid density functionals
Applied Physics Letters
2009
Vol. 94 , num. 14, p. 141911.DOI : 10.1063/1.3116612
Nitrogen fixation at passivated Fe nanoclusters supported by an oxide surface: Identification of viable reaction routes using density functional calculations
Physical Review B
2009
Vol. 80 , num. 7, p. 075407.DOI : 10.1103/PhysRevB.80.075407
Atomic structure of the two intermediate phase glasses SiSe4 and GeSe4
Physical Review B
2009
Vol. 79 , num. 17, p. 174201.DOI : 10.1103/PhysRevB.79.174201
First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack
Journal Of Applied Physics
2009
Vol. 105 , num. 6, p. 061603.DOI : 10.1063/1.3134523
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
Journal of Physics-Condensed Matter
2009
Vol. 21 , num. 39, p. 395502.DOI : 10.1088/0953-8984/21/39/395502
Student Projects
Interface between epitaxial graphene and silicon carbide: a first-principl study
2009
Advisor(s): A. Pasquarello; O. V. Yazyev
2008
Journal Articles
Effect of metal elements in catalytic growth of carbon nanotubes
Physical Review Letters
2008
Vol. 100 , num. 15, p. 156102.DOI : 10.1103/PhysRevLett.100.156102
Carbon diffusion in CVD growth of carbon nanotubes on metal nanoparticles
Physica Status Solidi B-Basic Solid State Physics
2008
Vol. 245 , num. 10, p. 2185 – 2188.DOI : 10.1002/pssb.200879573
Band offsets at the Si/SiO2 interface from many-body perturbation theory
Physical Review Letters
2008
Vol. 100 , num. 18, p. 186401.DOI : 10.1103/PhysRevLett.100.186401
Defect energy levels in density functional calculations: Alignment and band gap problem
Physical Review Letters
2008
Vol. 101 , num. 4, p. 046405.DOI : 10.1103/PhysRevLett.101.046405
Defect levels of dangling bonds in silicon and germanium through hybrid functionals
Physical Review B
2008
Vol. 78 , num. 7, p. 075203.DOI : 10.1103/PhysRevB.78.075203
Band gap opening at the 6H-SiC(0001) surface passivated by an epitaxial silicon oxynitride layer: A first-principles investigation
Surface Science
2008
Vol. 602 , num. 18, p. 2989 – 2993.DOI : 10.1016/j.susc.2008.07.036
Charge transition levels of the Ge dangling bond defect at Ge/insulator interfaces
Materials Science in Semiconductor Processing
2008
Vol. 11 , p. 226.DOI : 10.1016/j.mssp.2008.10.010
First-principles theory of infrared absorption spectra at surfaces and interfaces: Application to the Si(100): H2O surface
Physical Review B
2008
Vol. 78 , num. 7, p. 075307.DOI : 10.1103/PhysRevB.78.075307
Band alignments and defect levels in Si-HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning
Applied Physics Letters
2008
Vol. 92 , num. 13, p. 132911.DOI : 10.1063/1.2907704
Charge state of the O-2 molecule during silicon oxidation through hybrid functional calculations
Physical Review B
2008
Vol. 78 , num. 16, p. 161305.DOI : 10.1103/PhysRevB.78.161305
Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations
Physical Review Letters
2008
Vol. 101 , num. 10, p. 106802.DOI : 10.1103/PhysRevLett.101.106802
Short and intermediate range order in amorphous GeSe2
Physical Review B
2008
Vol. 77 , num. 14, p. 144207.DOI : 10.1103/PhysRevB.77.144207
Theses
First-principles study of defects at the SiC/SiO2 interface through hybrid functionals
Lausanne: EPFL2008
p. 132.DOI : 10.5075/epfl-thesis-4100
2007
Journal Articles
Core-level photoelectron spectroscopy probing local strain at silicon surfaces and interfaces
Physics of Semiconductors, Pts a and B
2007
Vol. 893 , p. 7 – 8.First-principles investigation of the structural and vibrational properties of vitreous GeSe2
Physical Review B
2007
Vol. 75 , num. 17, p. 174207.DOI : 10.1103/PhysRevB.75.174207
Semiconductor defects at the 4H-SiC(0001)/SiO2 interface
Physica B-Condensed Matter
2007
Vol. 401 , p. 556 – 559.DOI : 10.1016/j.physb.2007.09.020
Structural properties of amorphous GeSe2
Journal of Physics-Condensed Matter
2007
Vol. 19 , num. 41, p. 415111.DOI : 10.1088/0953-8984/19/41/415111
Effect of improved band-gap description in density functional theory on defect energy levels in alpha-quartz
Physica B-Condensed Matter
2007
Vol. 401 , p. 670 – 673.DOI : 10.1016/j.physb.2007.09.048
Hydrogen in Si(100)-SiO2-HfO2 gate stacks: Relevant charge states and their location
Applied Physics Letters
2007
Vol. 91 , num. 26, p. 262901.DOI : 10.1063/1.2828027
Alignment of hydrogen-related defect levels at the Si-SiO2 interface
Physica B-Condensed Matter
2007
Vol. 401 , p. 546 – 549.DOI : 10.1016/j.physb.2007.09.018
Migration of oxygen vacancy in HfO2 and across the HfO2/SiO2 interface: A first-principles investigation
Applied Physics Letters
2007
Vol. 91 , p. 192905.DOI : 10.1063/1.2807282
Microscopic origin of concentration fluctuations over intermediate range distances in network-forming disordered systems
Physical Review B
2007
Vol. 75 , p. 014206.DOI : 10.1103/PhysRevB.75.014206
Hyper-Raman spectrum of vitreous silica from first principles
Physical Review Letters
2007
Vol. 98 , num. 17, p. 176402.DOI : 10.1103/PhysRevLett.98.176402
Proton-induced fixed positive charge at the Si(100)-SiO2 interface
Physical Review Letters
2007
Vol. 99 , p. 126102.DOI : 10.1103/PhysRevLett.99.126102
Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations
Physical Review B
2007
Vol. 76 , num. 7, p. 075351.DOI : 10.1103/PhysRevB.76.075351
First principles investigation of defects at interfaces between silicon and amorphous high-kappa oxides
Microelectronic Engineering
2007
Vol. 84 , num. 9-10, p. 2022 – 2027.DOI : 10.1016/j.mee.2007.04.075
Vibrational spectra of vitreous SiO2 and vitreous GeO2 from first principles
Journal of Physics-Condensed Matter
2007
Vol. 19 , num. 41, p. 415112.DOI : 10.1088/0953-8984/19/41/415112
Electronic properties of an epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface: A first-principles investigation
Applied Physics Letters
2007
Vol. 91 , num. 6, p. 061930.DOI : 10.1063/1.2769949
Amorphous hafnium silicates: structural, electronic and dielectric properties
Microelectronic Engineering
2007
Vol. 84 , num. 9-10, p. 2416 – 2419.DOI : 10.1016/j.mee.2007.04.013
Band gaps and dielectric constants of amorphous hafnium silicates: A first-principles investigation
Applied Physics Letters
2007
Vol. 90 , num. 8, p. 082907.DOI : 10.1063/1.2643300
Protons at the Si-SiO2 interface: a first principle investigation
Microelectronic Engineering
2007
Vol. 84 , num. 9-10, p. 2035 – 2038.DOI : 10.1016/j.mee.2007.04.122
Conference Papers
Proton diffusion in amorphous SiO2 and hafnium silicate by Ab Initio molecular dynamics
Physics of Semiconductors, Pts A and B
2007
PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors – ICPS 2006, Vienna (Austria), 24-28 July 2006.p. 195 – 196
DOI : 10.1063/1.2729836
Structural and electronic properties of oxygen vacancies in monoclinic HfO2
Materials Research Society Symposium Proceedings
2007
Characterization of oxide/semiconductor interfaces for CMOS technologies, San Francisco, California, April 9-13, 2007.p. 0996 – H01
DOI : 10.1557/PROC-0996-H01-08
Modeling of atomic-scale processes during silicon oxidation: charge state of the O2 molecule
Materials Research Society Symposium Proceedings
2007
Characterization of oxide/semiconductor interfaces for CMOS technologies, San Francisco, California, April 9-13, 2007.p. 0996 – H01
Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties
Physics of Semiconductors, Pts A and B
2007
PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors – ICPS 2006, Vienna (Austria), 24-28 July 2006.p. 307 – 308
DOI : 10.1063/1.2729890
Theses
First principles vibrational spectra of tetrahedrally-bonded glasses : SiO2, GeO2 and GeSe2
Lausanne: EPFL2007
p. 138.DOI : 10.5075/epfl-thesis-3738
2006
Journal Articles
Origin of fine structure in Si 2p photoelectron spectra at silicon surfaces and interfaces
Physical Review Letters
2006
Vol. 96 , num. 15, p. 157601.DOI : 10.1103/PhysRevLett.96.157601
Proton diffusion mechanism in amorphous SiO2
Physical Review Letters
2006
Vol. 97 , num. 15, p. 155901.DOI : 10.1103/PhysRevLett.97.155901
Vibrational spectra of vitreous germania from first-principles
Physical Review B
2006
Vol. 74 , num. 15, p. 155208.DOI : 10.1103/PhysRevB.74.155208
Ion scattering simulations of the Si(100)-SiO2 interface
Physical Review B
2006
Vol. 74 , num. 7, p. 075316.DOI : 10.1103/PhysRevB.74.075316
Comment on “fraction of boroxol rings in vitreous boron oxide from a first-principles analysis of Raman and NMR spectra” – Umari and Pasquarello reply
Physical Review Letters
2006
Vol. 96 , num. 19, p. 199702.DOI : 10.1103/PhysRevLett.96.199702
Dielectric and infrared properties of ultrathin SiO2 layers on Si(100)
Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices
2006
Vol. 220 , p. 385 – 396.DOI : 10.1007/1-4020-4367-8_31
Mixed Wannier-Bloch functions for electrons and phonons in periodic systems
Physical Review Letters
2006
Vol. 96 , num. 21, p. 216403.DOI : 10.1103/PhysRevLett.96.216403
Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments
Applied Physics Letters
2006
Vol. 89 , num. 26, p. 262904.DOI : 10.1063/1.2424441
2005
Journal Articles
Titanium oxides and silicates as high-kappa dielectrics: A first-principles investigation
International Journal of Quantum Chemistry
2005
Vol. 101 , num. 6, p. 793 – 801.DOI : 10.1002/qua.20339
Abrupt model interface for the 4H(1000)SiC-SiO2 interface
Microelectronic Engineering
2005
Vol. 80 , p. 38 – 41.DOI : 10.1016/j.mee.2005.04.021
Modelling of paramagnetic trivalent silicon defect centres in amorphous silica and at Si-SiO2 interfaces
Journal of Physics-Condensed Matter
2005
Vol. 17 , num. 21, p. S2099 – S2113.DOI : 10.1088/0953-8984/17/21/006
Density functional theory with finite electric field
International Journal of Quantum Chemistry
2005
Vol. 101 , num. 6, p. 666 – 670.DOI : 10.1002/qua.20324
Electronic and dielectric properties of a suboxide interlayer at the silicon-oxide interface in MOS devices
Surface Science
2005
Vol. 586 , num. 1-3, p. 183 – 191.DOI : 10.1016/j.susc.2005.05.012
Equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon
Applied Physics Letters
2005
Vol. 86 , p. 192901.DOI : 10.1063/1.1923185
Atomistic models of the Si(100)-SiO2 interface: structural, electronic and dielectric properties
Journal of Physics-Condensed Matter
2005
Vol. 17 , num. 21, p. S2065 – S2074.DOI : 10.1088/0953-8984/17/21/003
Infrared spectra at surfaces and interfaces from first principles: Evolution of the spectra across the Si(100)-SiO2 interface
Physical Review Letters
2005
Vol. 95 , num. 18, p. 187402.DOI : 10.1103/PhysRevLett.95.187402
Atomic-scale modelling of the Si(100)-SiO2 interface
Physics of Semiconductors, Pts a and B
2005
Vol. 772 , p. 423 – 426.First-principles codes for computational crystallography in the Quantum-ESPRESSO package
Zeitschrift Fur Kristallographie
2005
Vol. 220 , num. 5-6, p. 574 – 579.DOI : 10.1524/zkri.220.5.574.65062
Infrared properties of ultrathin oxides on Si(100)
Microelectronic Engineering
2005
Vol. 80 , p. 420 – 423.DOI : 10.1016/j.mee.2005.04.025
Atomically controlled interfaces for future nanoelectronics
Journal of Physics-Condensed Matter
2005
Vol. 17 , num. 21, p. V1 – V5.DOI : 10.1088/0953-8984/17/21/N01
Modelling of dielectric constants of amorphous Zr silicates
Journal of Physics-Condensed Matter
2005
Vol. 17 , p. S2089 – S2098.DOI : 10.1088/0953-8984/17/21/005
Theory of atomic-scale dielectric permittivity at insulator interfaces
Physical Review B
2005
Vol. 71 , p. 144104.DOI : 10.1103/PhysRevB.71.144104
An electronegativity-induced spin repulsion effect
Journal of Physical Chemistry A
2005
Vol. 109 , num. 37, p. 8385 – 8390.DOI : 10.1021/jp053335h
Ab initio molecular dynamics of liquid hydrogen chloride
Journal of Chemical Physics
2005
Vol. 122 , num. 11, p. 114512.DOI : 10.1063/1.1869972
Infrared and Raman spectra of disordered materials from first principles
Diamond and Related Materials
2005
Vol. 14 , num. 8, p. 1255 – 1261.DOI : 10.1016/j.diamond.2004.12.007
Fraction of boroxol rings in vitreous boron oxide from a first-principles analysis of Raman and NMR spectra
Physical Review Letters
2005
Vol. 95 , num. 13, p. 137401.DOI : 10.1103/PhysRevLett.95.137401
Erratum: Titanium oxides and silicates as high-K-kappa dielectrics: A first principles investigation (vol 101, pg 793, 2005)
International Journal of Quantum Chemistry
2005
Vol. 103 , num. 3, p. 354 – 354.DOI : 10.1002/qua.20643
Medium-range structural properties of vitreous germania obtained through first-principles analysis of vibrational spectra
Physical Review Letters
2005
Vol. 95 , num. 7, p. 075505.DOI : 10.1103/PhysRevLett.95.075505
Atomic-scale modelling of kinetic processes occurring during silicon oxidation
Journal of Physics-Condensed Matter
2005
Vol. 17 , num. 21, p. S2051 – S2063.DOI : 10.1088/0953-8984/17/21/002
Comment on “Structural analysis of the SiO2/Si(100) interface by means of photoelectron diffraction”
Physical Review Letters
2005
Vol. 94 , num. 18, p. 189601.DOI : 10.1103/PhysRevLett.94.189601
Supported nanoclusters: Preadsorbates tuning catalytic activity
Physical Review B
2005
Vol. 71 , num. 8, p. 081403.DOI : 10.1103/PhysRevB.71.081403
O-2 oxidation reaction at the Si(100)-SiO2 interface: A first-principles investigation
Journal of Materials Science
2005
Vol. 40 , num. 12, p. 3047 – 3050.DOI : 10.1007/s10853-005-2663-7
Ab initio study of charged states of H in amorphous SiO2
Microelectronic Engineering
2005
Vol. 80 , p. 288 – 291.DOI : 10.1016/j.mee.2005.04.082
Theses
Infrared properties of the Si-SiO2 interface from first principles
Lausanne: EPFL2005
p. 128.DOI : 10.5075/epfl-thesis-3259
2004
Journal Articles
Atomistic model structure of the Si(100)-SiO2 interface from a synthesis of experimental data
Applied Surface Science
2004
Vol. 234 , num. 1-4, p. 190 – 196.DOI : 10.1016/j.apsusc.2004.05.020
First-principles investigation of high-kappa dielectrics: Comparison between the silicates and oxides of hafnium and zirconium
Physical Review B
2004
Vol. 69 , num. 18, p. 184301.DOI : 10.1103/PhysRevB.69.184301
Finite electric field in density functional calculations with periodic boundary conditions
Computational Materials Science
2004
Vol. 30 , num. 1-2, p. 116 – 119.DOI : 10.1016/j.commatsci.2004.01.018
Nitrogen adsorption on a supported iron nanocluster
Vacuum
2004
Vol. 74 , num. 2, p. 173 – 177.DOI : 10.1016/j.vacuum.2003.12.117
Silicon crystal distortions at the Si(100)-SiO2 interface from analysis of ion-scattering
Microelectronic Engineering
2004
Vol. 72 , num. 1-4, p. 197 – 200.DOI : 10.1016/j.mee.2003.12.036
Density-functional perturbational theory for dielectric tensors in the ultrasoft pseudopotential scheme
Physical Review B
2004
Vol. 69 , num. 23, p. 235102.DOI : 10.1103/PhysRevB.69.235102
Modeling phase separation in nonstoichiometric silica
Physical Review Letters
2004
Vol. 93 , num. 13, p. 135501.DOI : 10.1103/PhysRevLett.93.135501
Charge fluctuations and concentration fluctuations at intermediate-range distances in the disordered network-forming materials SiO2, SiSe2, and GeSe2
Physical Review B
2004
Vol. 70 , p. 174202.DOI : 10.1103/PhysRevB.70.174202
Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides
Microelectronic Engineering
2004
Vol. 72 , num. 1-4, p. 299 – 303.DOI : 10.1016/j.mee.2004.01.011
First-principles investigation of high-kappa dielectrics: Comparison between the silicates and oxides of hafnium and zirconium (vol B 69, art no 184301, 2004)
Physical Review B
2004
Vol. 70 , num. 9, p. 099903.DOI : 10.1103/PhysRevB.70.099903
Electronic structure at realistic Si(100)-SiO2 interfaces
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers
2004
Vol. 43 , num. 11B, p. 7895 – 7898.DOI : 10.1143/JJAP.43.7895
Noncollinear magnetism in liquid oxygen: A first-principles molecular dynamics study
Physical Review B
2004
Vol. 70 , num. 13, p. 134402.DOI : 10.1103/PhysRevB.70.134402
Multiscale modeling of oxygen diffusion through the oxide during silicon oxidation
Physical Review B
2004
Vol. 70 , num. 19, p. 195312.DOI : 10.1103/PhysRevB.70.195312
Reaction of the oxygen molecule at the Si(100)-SiO2 interface during silicon oxidation
Physical Review Letters
2004
Vol. 93 , p. 086102.DOI : 10.1103/PhysRevLett.93.086102
Dielectric susceptibility of dipolar molecular liquids by ab initio molecular dynamics: application to liquid HCl
Chemical Physics Letters
2004
Vol. 390 , num. 1-3, p. 193 – 198.DOI : 10.1016/j.cplett.2004.04.021
Book Chapters
Atomic-scale investigation of the dielectric screening at the interface between silicon and its oxide
Fundamentals of Novel Oxide/Semiconductor Interfaces; 2004. p. 3 – 7.DOI : 10.1557/PROC-786-E6.28
Ab initio calculations of the structural, electronic and dynamical properties of high-kappa dielectrics
High-K Gate Dielectrics; CRC Press, 2004. p. 431 – 466.2003
Journal Articles
Dependence of the O-2 diffusion rate on oxide thickness during silicon oxidation
Journal of Physics-Condensed Matter
2003
Vol. 15 , num. 16, p. S1553 – S1560.DOI : 10.1088/0953-8984/15/16/305
Etude de propriétés structurales et dynamiques par dynamique moléculaire ab initio : Application aux verres et aux liquides vitreux
Journal De Physique IV
2003
Vol. 111 , p. 373 – 393.DOI : 10.1051/jp4:2002831
First-principles analysis of the Raman spectrum of vitreous silica: comparison with the vibrational density of states
Journal of Physics-Condensed Matter
2003
Vol. 15 , num. 16, p. S1547 – S1552.DOI : 10.1088/0953-8984/15/16/304
Structural and magnetic correlations in liquid oxygen: an ab initio molecular dynamics study
Journal of Physics-Condensed Matter
2003
Vol. 15 , num. 1, p. S89 – S94.DOI : 10.1088/0953-8984/15/1/310
Dynamical monopoles and dipoles in a condensed molecular system: The case of liquid water
Physical Review B
2003
Vol. 68 , num. 17, p. 174301.DOI : 10.1103/PhysRevB.68.174302
Polarizability and dielectric constant in density-functional supercell calculations with discrete k-point samplings
Physical Review B
2003
Vol. 68 , num. 8, p. 085114.DOI : 10.1103/PhysRevB.68.085114
Transition structure at the Si(100)-SiO2 interface
Physical Review Letters
2003
Vol. 90 , num. 18, p. 186101.DOI : 10.1103/PhysRevLett.90.186101
Atomistic structure of the Si(100)-SiO2 interface: A synthesis of experimental data
Applied Physics Letters
2003
Vol. 83 , num. 7, p. 1417 – 1419.DOI : 10.1063/1.1604470
Dielectric discontinuity at interfaces in the atomic-scale limit: Permittivity of ultrathin oxide films on silicon
Physical Review Letters
2003
Vol. 91 , num. 26, p. 267601.DOI : 10.1103/PhysRevLett.91.267601
Concentration of small ring structures in vitreous silica from a first-principles analysis of the Raman spectrum
Physical Review Letters
2003
Vol. 90 , num. 2, p. 027401.DOI : 10.1103/PhysRevLett.90.027401
Supported Fe nanoclusters: Evolution of magnetic properties with cluster size
Physical Review Letters
2003
Vol. 90 , num. 24, p. 247202.DOI : 10.1103/PhysRevLett.90.247202
Absence of charge-charge correlations at intermediate-range distances in disordered network-forming materials
Physical Review B
2003
Vol. 68 , num. 2, p. 020201.DOI : 10.1103/PhysRevB.68.020201
Evidence of concentration fluctuations in disordered network-forming systems: the case of GeSe4 and SiSe2
Journal of Physics-Condensed Matter
2003
Vol. 15 , num. 16, p. S1537 – S1546.DOI : 10.1088/0953-8984/15/16/303
Conference Papers
New evidence for reconstruction at the Si(100)-SiO2 interface from analysis of ion scattering
proceedings of the 26th International Conference on the Physics of Semiconductors
2003
Physics of Semiconductors 2002, Edinburgh, UK, 29 July-2 August, 2002.Car-Parrinello molecular dynamics in a finite homogeneous electric field
Fundamental Physics of Ferroelectrics 2003
2003
p. 269 – 275
DOI : 10.1063/1.1609962
Atomic processes during silicon oxidation: Oxygen diffusion through the oxide layer
26th International Conference on the Physics of Semiconductors
2003
Physics of Semiconductors 2002, Edinburgh, UK, 29 July-2 August, 2002.Theses
Simulation of atomistic processes during silicon oxidation
Lausanne: EPFL2003
p. 125.DOI : 10.5075/epfl-thesis-2788
Raman spectra of disordered oxides from first principles
Lausanne: EPFL2003
p. 124.DOI : 10.5075/epfl-thesis-2774
2002
Journal Articles
Modeling of the Raman spectrum of vitreous silica: concentration of small ring structures
Physica B-Condensed Matter
2002
Vol. 316 , p. 572 – 574.DOI : 10.1016/S0921-4526(02)00576-8
Dielectric constants of Zr silicates: A first-principles study
Physical Review Letters
2002
Vol. 89 , num. 11, p. 117601.DOI : 10.1103/PhysRevLett.89.117601
First-principles modeling of paramagnetic Si dangling-bond defects in amorphous SiO2
Physical Review B
2002
Vol. 66 , num. 24, p. 245201.DOI : 10.1103/PhysRevB.66.245201
sp(2)/sp(3) hybridization ratio in amorphous carbon from C 1s core-level shifts: X-ray photoelectron spectroscopy and first-principles calculation
Physical Review B
2002
Vol. 65 , num. 4, p. 045101.DOI : 10.1103/PhysRevB.65.045101
Modeling of Si 2p core-level shifts at Si-(ZrO2)(x)(SiO2)(1-x) interfaces
Applied Physics Letters
2002
Vol. 81 , num. 22, p. 4233 – 4235.DOI : 10.1063/1.1526172
Energetics of oxygen species in crystalline and amorphous SiO2: a first-principles investigation
Solid-State Electronics
2002
Vol. 46 , num. 11, p. 1873 – 1878.DOI : 10.1016/S0038-1101(02)00158-2
Pressure-induced structural changes in liquid SiO2 from ab initio simulations
Physical Review Letters
2002
Vol. 89 , num. 24, p. 245504.DOI : 10.1103/PhysRevLett.89.245504
Atomic structure at the Si(001)-SiO2 interface: from the interpretation of Si 2p core-level shifts to a model structure
Materials Science and Engineering B-Solid State Materials for Advanced Technology
2002
Vol. 96 , num. 2, p. 102 – 106.DOI : 10.1016/S0921-5107(02)00299-4
Ab initio molecular dynamics in a finite homogeneous electric field
Physical Review Letters
2002
Vol. 89 , num. 15, p. 157602.DOI : 10.1103/PhysRevLett.89.157602
First-principles electronic structure study of Ti-PTCDA contacts
Physical Review B
2002
Vol. 65 , num. 15, p. 155314.DOI : 10.1103/PhysRevB.65.155314
Ab initio molecular dynamics investigation of the structure and the noncollinear magnetism in liquid oxygen: Occurrence of O-4 molecular units
Physical Review Letters
2002
Vol. 89 , num. 19, p. 197204.DOI : 10.1103/PhysRevLett.89.197204
Oxygen diffusion through the disordered oxide network during silicon oxidation
Physical Review Letters
2002
Vol. 88 , num. 12, p. 125901.DOI : 10.1103/PhysRevLett.88.125901
Conference Papers
A generalization of the effective-charge concept: Dynamical multipoles in molecular solids and liquids
Fundamental Physics of Ferroelectrics 2002
2002
p. 198 – 207
DOI : 10.1063/1.1499568
2001
Journal Articles
First solvation shell of the Cu(II) aqua ion: Evidence for fivefold coordination
Science
2001
Vol. 291 , num. 5505, p. 856 – 859.DOI : 10.1126/science.291.5505.856
Short- and intermediate-range structure of liquid GeSe2
Physical Review B
2001
Vol. 64 , num. 14, p. 144205.DOI : 10.1103/PhysRevB.64.144205
First-principle study of C 1s core-level shifts in amorphous carbon
Computational Materials Science
2001
Vol. 22 , num. 1-2, p. 67 – 72.DOI : 10.1016/S0927-0256(01)00167-7
First-principles study of dynamical and dielectric properties of tetragonal zirconia
Physical Review B
2001
Vol. 64 , num. 13, p. 134301.DOI : 10.1103/PhysRevB.64.134301
Nitrogen bonding configurations at nitrided Si(001) surfaces and Si(001)-SiO2 interfaces: A first-principles study of core-level shifts
Physical Review B
2001
Vol. 63 , num. 7, p. 75307.DOI : 10.1103/PhysRevB.63.075307
Raman scattering intensities in alpha-quartz: A first-principles investigation
Physical Review B
2001
Vol. 63 , num. 9, p. 95305.DOI : 10.1103/PhysRevB.63.094305
First-principles study of structural, electronic, dynamical, and dielectric properties of zircon
Physical Review B
2001
Vol. 63 , num. 10, p. 104305.DOI : 10.1103/PhysRevB.63.104305
Oxygen species in SiO2: a first-principles investigation
Microelectronic Engineering
2001
Vol. 59 , num. 1-4, p. 167 – 172.DOI : 10.1016/S0167-9317(01)00661-X
Nitrogen 1s core-level shifts at the NH3 saturated Si(100)-2 x 1 surface: a first-principles study
Surface Science
2001
Vol. 490 , num. 1-2, p. L614 – L618.DOI : 10.1016/S0039-6028(01)01343-7
Origin of the first sharp diffraction peak in the structure factor of disordered network-forming systems: Layers or voids?
Journal of Chemical Physics
2001
Vol. 114 , num. 18, p. 7976 – 7979.DOI : 10.1063/1.1365108
First-principles simulation of vitreous systems
Current Opinion in Solid State & Materials Science
2001
Vol. 5 , num. 6, p. 503 – 508.DOI : 10.1016/S1359-0286(02)00011-6
Conference Papers
Interpretation of N 1s core-level shifts at nitrided Si(001)-SiO2 interfaces: A first-principles study
Materials Research Society Workshop Series
2001
International workshop on device technology : Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, Porto Alegre, Brazil, September 3-5, 2001.Oxygen species in amorphous SiO2: Relative energetics and concentration of equilibrium sites
Materials Research Society Workshop Series
2001
International workshop on device technology : Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, Porto Alegre, Brazil, September 3-5, 2001.Book Chapters
Atomic dynamics during silicon oxidation
Fundamental Aspects of Silicon Oxidation; 2001. p. 107 – 125.DOI : 10.1007/978-3-642-56711-7_6
2000
Journal Articles
Vibrational amplitudes in vitreous silica
Physical Review B
2000
Vol. 61 , num. 6, p. 3951 – 3959.DOI : 10.1103/PhysRevB.61.3951
Atomic structure and hyperfine spectrum of Pb-type defects at Si-Sio(2) interfaces: An ab-initio investigation
Physics and Chemistry of Sio2 and the Si-Sio2 Interface – 4
2000
Vol. 2000 , num. 2, p. 283 – 293.Breakdown of intermediate-range order in liquid GeSe2 at high temperatures
Journal of Physics-Condensed Matter
2000
Vol. 12 , num. 46, p. L697 – L704.DOI : 10.1088/0953-8984/12/46/102
Dangling bond defects at Si-SiO2 interfaces: Atomic structure of the P-b1 center
Physical Review Letters
2000
Vol. 85 , num. 13, p. 2773 – 2776.DOI : 10.1103/PhysRevLett.85.2773
First-principles study of NH3 exposed Si(001)2×1: Relation between N 1s core-level shifts and atomic structure
Applied Physics Letters
2000
Vol. 76 , num. 5, p. 553 – 555.DOI : 10.1063/1.125815
Concentration fluctuations on intermediate range distances in liquid GeSe2: the critical role of ionicity
Computational Materials Science
2000
Vol. 17 , num. 2-4, p. 115 – 121.DOI : 10.1016/S0927-0256(00)00007-0
Chemisorption pathways and Si 2p core-level shifts for the interaction of spherosiloxane clusters with Si(100): Implications for photoemission in Si/SiO2 systems
Applied Physics Letters
2000
Vol. 76 , num. 26, p. 3873 – 3875.DOI : 10.1063/1.126805
Validity of the bond-energy picture for the energetics at Si-SiO2 interfaces
Physical Review B
2000
Vol. 62 , num. 24, p. 16326 – 16329.DOI : 10.1103/PhysRevB.62.R16326
Formation energy of threefold coordinated oxygen in SiO2 systems
Applied Surface Science
2000
Vol. 166 , num. 1-4, p. 451 – 454.DOI : 10.1016/S0169-4332(00)00467-0
Si-O-Si bond-angle distribution in vitreous silica from first-principles Si-29 NMR analysis
Physical Review B
2000
Vol. 62 , num. 8, p. R4786 – R4789.DOI : 10.1103/PhysRevB.62.R4786
Conference Papers
Model interface between silicon and disordered SiO2
Physics and Chemistry of Sio2 and the Si-Sio2 Interface – 4
2000
Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Toronto, Canada, May 15-18, 2000.p. 271 – 282
1999
Journal Articles
Network transformation processes during oxidation of silicon
Microelectronic Engineering
1999
Vol. 48 , num. 1-4, p. 89 – 94.DOI : 10.1016/S0167-9317(99)00345-7
Intermediate range order and bonding character in disordered network-forming systems
Journal of the American Chemical Society
1999
Vol. 121 , num. 12, p. 2943 – 2944.DOI : 10.1021/ja9808447
Number of independent partial structure factors for a disordered n-component system
Physical Review B
1999
Vol. 59 , num. 1, p. 5 – 7.DOI : 10.1103/PhysRevB.59.5
1998
Journal Articles
Interface structure between silicon and its oxide by first-principles molecular dynamics
Nature
1998
Vol. 396 , num. 6706, p. 58 – 60.DOI : 10.1038/23908
Structural and electronic properties of small Cu-n clusters using generalized-gradient approximations within density functional theory
Journal of Chemical Physics
1998
Vol. 109 , num. 16, p. 6626 – 6630.DOI : 10.1063/1.477313
A first principles study of small Cu-n clusters based on local-density and generalized-gradient approximations to density functional theory
Computational Materials Science
1998
Vol. 10 , num. 1-4, p. 463 – 467.DOI : 10.1016/S0927-0256(97)00124-9
Dynamics of structural relaxation upon Rydberg excitation of an impurity in an Ar crystal
Chemical Physics
1998
Vol. 233 , num. 2-3, p. 343 – 352.DOI : 10.1016/S0301-0104(98)00154-2
Cu++ and Li+ interaction with polyethylene oxide by ab initio molecular dynamics
Journal of Chemical Physics
1998
Vol. 108 , num. 23, p. 9933 – 9936.DOI : 10.1063/1.476432
Dynamic structure factor of vitreous silica from first principles: Comparison to neutron-inelastic-scattering experiments
Physical Review B
1998
Vol. 57 , num. 22, p. 14133 – 14140.DOI : 10.1103/PhysRevB.57.14133
Structure of liquid GexSe1-x at the stiffness threshold composition
Physical Review B
1998
Vol. 58 , num. 22, p. 14661 – 14664.DOI : 10.1103/PhysRevB.58.R14661
Disordered SiO2 systems : a first-principles investigation
Présentation des travaux des trois lauréats
1998
num. 10.Fully unconstrained approach to noncollinear magnetism: Application to small Fe clusters
Physical Review Letters
1998
Vol. 80 , num. 16, p. 3622 – 3625.DOI : 10.1103/PhysRevLett.80.3622
Identification of Raman defect lines as signatures of ring structures in vitreous silica
Physical Review Letters
1998
Vol. 80 , p. 5145 – 5147.DOI : 10.1103/PhysRevLett.80.5145
Microscopic structure of liquid GeSe2: The problem of concentration fluctuations over intermediate range distances
Physical Review Letters
1998
Vol. 80 , num. 11, p. 2342 – 2345.DOI : 10.1103/PhysRevLett.80.2342
Conference Papers
Interpretation of the vibrational spectra of vitreous silica
Proceedings of the Vii Italian-Swiss Workshop Advances in Computational Materials Science Ii
1998
p. 13 – 18
Book Chapters
Investigation of the structural and acidic properties of bulk offretite using first principles molecular dynamics
Thermodynamic Modeling and Materials Data Engineering; Springer, 1998. p. 129 – 134.ISBN : 3540644458
DOI : 10.1007/978-3-642-72207-3_13
Core-level shifts in Si(001)-SiO2 systems: The value of first-principle investigations
Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices; 1998. p. 89 – 102.DOI : 10.1007/978-94-011-5008-8_7
1997
Journal Articles
Nitrogen incorporation at Si(001)-SiO2 interfaces: Relation between N 1s core-level shifts and microscopic structure
Physical Review Letters
1997
Vol. 79 , num. 25, p. 5174 – 5177.DOI : 10.1103/PhysRevLett.79.5174
Density-functional perturbation theory for lattice dynamics with ultrasoft pseudopotentials
Physical Review B
1997
Vol. 56 , num. 18, p. 11369 – 11372.DOI : 10.1103/PhysRevB.56.R11369
Dynamical charge tensors and infrared spectrum of amorphous SiO2
Physical Review Letters
1997
Vol. 79 , num. 9, p. 1766 – 1769.DOI : 10.1103/PhysRevLett.79.1766
Structure and hyperfine parameters of E'(1) centers in a-quartz and in vitreous SiO2
Physical Review Letters
1997
Vol. 78 , num. 5, p. 887 – 890.DOI : 10.1103/PhysRevLett.78.887
Origin of the high-frequency doublet in the vibrational spectrum of vitreous SiO2
Science
1997
Vol. 275 , num. 5308, p. 1925 – 1927.DOI : 10.1126/science.275.5308.1925
1996
Journal Articles
Si 2p core-level shifts in small molecules: A first principles study
Physica Scripta
1996
Vol. T66 , p. 118 – 120.DOI : 10.1088/0031-8949/1996/T66/018
First-principles study of Si 2p core-level shifts at water and hydrogen covered Si(001)2×1 surfaces
Journal of Vacuum Science & Technology B
1996
Vol. 14 , num. 4, p. 2809 – 2811.DOI : 10.1116/1.588837
Generalized-gradient approximations to density-functional theory: A comparative study for atoms and solids
Physical Review B
1996
Vol. 53 , num. 3, p. 1180 – 1185.DOI : 10.1103/PhysRevB.53.1180
Comparison of structurally relaxed models of the Si(001)-SiO2 interface based on different crystalline oxide forms
Applied Surface Science
1996
Vol. 104 , p. 317 – 322.DOI : 10.1016/S0169-4332(96)00164-X
Spherosiloxane H8Si8O12 clusters on Si(001): First-principles calculation of Si 2p core-level shifts
Physical Review B – Condensed Matter and Materials Physics
1996
Vol. 54 , num. 4, p. R2339.DOI : 10.1103/PhysRevB.54.R2339
First-principles studies of Cu clusters
Surface Review and Letters
1996
Vol. 3 , num. 1, p. 287 – 291.DOI : 10.1142/S0218625X9600053X
Structurally relaxed models of the Si(001)-SiO2 interface
Applied Physics Letters
1996
Vol. 68 , num. 5, p. 625 – 627.DOI : 10.1063/1.116489
Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface
Physical Review B
1996
Vol. 53 , num. 16, p. 10942 – 10950.DOI : 10.1103/PhysRevB.53.10942
Interpretation of photoelectron spectra in Cu-n(-) clusters including thermal and final-state effects: The case of Cu-7(-)
Physical Review B
1996
Vol. 54 , num. 12, p. 8913 – 8918.DOI : 10.1103/PhysRevB.54.8913
1995
Journal Articles
First Principles Study of Photoelectron-Spectra of Cu-N(-) Clusters
Physical Review Letters
1995
Vol. 75 , num. 11, p. 2104 – 2107.DOI : 10.1103/PhysRevLett.75.2104
Structural and Electronic-Properties of Small Copper Clusters – a First Principles Study
Chemical Physics Letters
1995
Vol. 238 , num. 4-6, p. 215 – 221.DOI : 10.1016/0009-2614(95)00394-J
Si 2p Core-Level Shifts at the Si(001) Sio2 Interface – a First-Principles Study
Physical Review Letters
1995
Vol. 74 , num. 6, p. 1024 – 1027.DOI : 10.1103/PhysRevLett.74.1024
Model of Vitreous Sio2 Generated by an Ab-Initio Molecular-Dynamics Quench from the Melt
Physical Review B
1995
Vol. 52 , num. 17, p. 12690 – 12695.DOI : 10.1103/PhysRevB.52.12690
Structural and Electronic-Properties of Liquid and Amorphous Sio2 – an Ab-Initio Molecular-Dynamics Study
Physical Review Letters
1995
Vol. 74 , num. 23, p. 4682 – 4685.DOI : 10.1103/PhysRevLett.74.4682
Conference Papers
Magnetic field perturbation of a shallow acceptor and its bound exciton confined in GaAs/AlGaAs quantum wells.
Proceedings of the 22nd International Conference on the Physics of Semiconductors
1995
22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, August 15-19, 1994.p. 2251 – 2254
Acceptor energy levels in GaAs/AlGaAs quantum wells in the presence of an external magnetic field.
Proceedings
1995
22nd International Conference on the Physics of Semiconductors.First-principles study of microscopic models of the Si(001)-SiO2 interface.
Proceedings of the 22nd International Conference on the Physics of Semiconductors
1995
22nd International Conference on the Physics of Semiconductors.p. 612 – 615
1994
Journal Articles
Magnetism of Carbon Clusters
Physical Review B
1994
Vol. 50 , num. 22, p. 16459 – 16463.DOI : 10.1103/PhysRevB.50.16459
Magnetic-Properties of the S-Like Bound Hole States in Gaas/Alxga1-Xas Quantum-Wells
Physical Review B
1994
Vol. 49 , num. 15, p. 10794 – 10797.DOI : 10.1103/PhysRevB.49.10794
1st Principles Molecular-Dynamics Calculation of the Structure and Acidity of a Bulk Zeolite
Chemical Physics Letters
1994
Vol. 226 , num. 3-4, p. 245 – 250.DOI : 10.1016/0009-2614(94)00731-4
Theoretical Calculations of Shallow Acceptor States in Gaas Alxga1-Xas Quantum-Wells in the Presence of an External Magnetic-Field
Physical Review B
1994
Vol. 50 , num. 4, p. 2393 – 2398.DOI : 10.1103/PhysRevB.50.2393
Magnetooptical Studies of Acceptors Confined in Gaas/Alxga1-Xas Quantum-Wells
Physical Review B
1994
Vol. 50 , num. 7, p. 4901 – 4904.DOI : 10.1103/PhysRevB.50.4901
Diffusion Mechanism of Cu Adatoms on a Cu(001) Surface
Surface Science
1994
Vol. 306 , num. 3, p. L575 – L578.DOI : 10.1016/0039-6028(94)90069-8
Infrared-Absorption Frequencies and Oscillator-Strengths of Accepters Confined in Gaas/Algaas Quantum-Wells
Applied Physics Letters
1994
Vol. 65 , num. 26, p. 3365 – 3367.DOI : 10.1063/1.112393
Infrared-Absorption Spectra of Accepters Confined in Gaas/Alxga1-Xas Quantum-Wells in the Presence of an External Magnetic-Field
Physical Review B
1994
Vol. 50 , num. 15, p. 10953 – 10957.DOI : 10.1103/PhysRevB.50.10953
Book Chapters
Magnetooptical Studies of Acceptors Confined in GaAs/AlGaAs Quantum-Wells
Physics and Applications of Defects in Advanced Semiconductors; 1994. p. 73 – 78.DOI : 10.1557/PROC-325-73
1993
Journal Articles
Car-Parrinello Molecular-Dynamics with Vanderbilt Ultrasoft Pseudopotentials
Physical Review B
1993
Vol. 47 , num. 16, p. 10142 – 10153.DOI : 10.1103/PhysRevB.47.10142
Ab initio molecular dynamics: application to liquid copper
Computational Materials Science
1993
Vol. 1 , num. 4, p. 419 – 427.DOI : 10.1016/0927-0256(93)90040-T
Ring Currents in Topologically Complex-Molecules – Application to C60, C70, and Their Hexa-Anions
Physical Review A
1993
Vol. 47 , num. 3, p. 1783 – 1789.DOI : 10.1103/PhysRevA.47.1783
Application of Variational Techniques to Time-Dependent Perturbation-Theory
Physical Review B
1993
Vol. 48 , num. 8, p. 5090 – 5094.DOI : 10.1103/PhysRevB.48.5090
Conference Papers
First-Principles Molecular Dynamics
Computer Simulation in Chemical Physics
1993
NATO Advanced Study Institute, Alghero, Sardinia, September 1992.p. 261 – 313
DOI : 10.1007/978-94-011-1679-4_8
1992
Journal Articles
Abinitio Molecular-Dynamics for D-Electron Systems – Liquid Copper at 1500-K
Physical Review Letters
1992
Vol. 69 , num. 13, p. 1982 – 1985.DOI : 10.1103/PhysRevLett.69.1982
Ring Currents in Icosahedral C60
Science
1992
Vol. 257 , num. 5077, p. 1660 – 1661.DOI : 10.1126/science.257.5077.1660
Hole subbands in quantum wells: Comparison between theory and hot-electron-acceptor-luminescence experiments
Physical Review B
1992
Vol. 46 , num. 4, p. 2625 – 2627.DOI : 10.1103/PhysRevB.46.2625
Effective-State Approach to 2nd-Order Perturbation-Theory
Europhysics Letters
1992
Vol. 17 , num. 5, p. 387 – 392.DOI : 10.1209/0295-5075/17/5/002
Conference Papers
Resonance width of the light-hole exciton in GaAs-Ga$_{1-x}$Al$_x$As quantum wells
Optics of Excitons in Confined Systems
1992
International meeting on the optics of excitons in confined systems, Giardini Naxos, Italy, 24-27 September 1991.p. 69 – 72
1991
Journal Articles
Polarization Dependence of Multiphoton Transitions
Physical Review B
1991
Vol. 43 , num. 5, p. 3837 – 3846.DOI : 10.1103/PhysRevB.43.3837
Excitonic Effects on the 2-Photon Transition Rate in Quantum-Wells
Superlattices and Microstructures
1991
Vol. 9 , num. 2, p. 157 – 160.DOI : 10.1016/0749-6036(91)90273-T
Variational Calculation of Fano Linewidth – Application to Excitons in Quantum-Wells
Physical Review B
1991
Vol. 44 , num. 7, p. 3162 – 3167.DOI : 10.1103/PhysRevB.44.3162
Complex Pattern of Impurity States in Shallow Semiconductor Quantum-Wells
Europhysics Letters
1991
Vol. 15 , num. 4, p. 447 – 451.DOI : 10.1209/0295-5075/15/4/014
Polarization Dependence of 2-Photon Transitions in Quantum-Wells
Nuovo Cimento Della Societa Italiana Di Fisica D-Condensed Matter Atomic Molecular and Chemical Physics Fluids Plasmas Biophysics
1991
Vol. 13 , num. 3, p. 337 – 342.DOI : 10.1007/BF02456961
Shallow Impurities in Gaas-Ga1-Xalxas Quantum-Wells
Physica Scripta
1991
Vol. T39 , p. 182 – 187.DOI : 10.1088/0031-8949/1991/T39/028
High Exciton Binding-Energies in Gaas/Gaaias Quantum-Wells
Superlattices and Microstructures
1991
Vol. 9 , num. 1, p. 1 – 4.DOI : 10.1016/0749-6036(91)90081-2
Infrared Transitions between Shallow Acceptor States in Gaas-Ga1-Xalxas Quantum-Wells
Physical Review B
1991
Vol. 44 , num. 3, p. 1118 – 1127.DOI : 10.1103/PhysRevB.44.1118
Theses
Multiphoton transitions in solids
Lausanne: EPFL1991
p. 139.DOI : 10.5075/epfl-thesis-924
1990
Journal Articles
Interpretation of 3-Photon Spectra in Alkali-Halides
Physical Review B
1990
Vol. 41 , num. 17, p. 12230 – 12235.DOI : 10.1103/PhysRevB.41.12230
Effect of Biaxial Strain on Acceptor-Level Energies in Inyga1-Yas/Alxga1-Xas (on Gaas) Quantum-Wells – Comment
Physical Review B
1990
Vol. 42 , num. 12, p. 7641 – 7642.DOI : 10.1103/PhysRevB.42.7641
Effect of Continuum States on 2-Photon Absorption in Quantum-Wells
Physical Review B
1990
Vol. 41 , num. 18, p. 12728 – 12734.DOI : 10.1103/PhysRevB.41.12728
2-Photon Transitions with Time-Delayed Radiation Pulses
Applied Laser Spectroscopy
1990
Vol. 241 , p. 109 – 115.Accurate Theory of Excitons in Gaas-Ga1-Xalxas Quantum-Wells
Physical Review B
1990
Vol. 42 , num. 14, p. 8928 – 8938.DOI : 10.1103/PhysRevB.42.8928
2-Photon Transitions to Excitons in Quantum-Wells
Physical Review B
1990
Vol. 42 , num. 14, p. 9073 – 9079.DOI : 10.1103/PhysRevB.42.9073
Binding energies of ground and excited states of shallow acceptors in GaAs/Ga1-xAlxAs quantum wells
Physical Review B
1990
Vol. 42 , num. 8, p. 5349 – 5352.DOI : 10.1103/PhysRevB.42.5349
Conference Papers
2-Photon Transitions to Excitons in Quantum-Wells
20th International Conference on the Physics of Semiconductors, Vols 1-3
1990
p. 1509 – 1512
Infrared Transitions between Shallow Acceptor States in GaAs/Ga$_{1-x}$Al$_{x}$As Quantum-Wells
20th International Conference on the Physics of Semiconductors, Vols 1-3
1990
p. 1389 – 1392
1989
Journal Articles
Binding energies of p-type acceptor states in GaAs-Ga1-xAlxAs quantum wells
Helvetica physica acta
1989
Vol. 62 , p. 872.One-Dimensional Random Potentials Allowing for Extended States
Journal of Physics-Condensed Matter
1989
Vol. 1 , num. 47, p. 9509 – 9512.DOI : 10.1088/0953-8984/1/47/019
Theory of Excitons in GaAs-Ga$_{1-x}$Al$_x$As Quantum Wells Including Valence Band Mixing
Superlattices and Microstructures
1989
Vol. 5 , num. 1, p. 59 – 63.DOI : 10.1016/0749-6036(89)90068-2
Binding-Energies of Excited Shallow Acceptor States in GaAs/Ga$_{1-x}$Al$_x$As Quantum Wells
Physical Review B
1989
Vol. 40 , num. 8, p. 5602 – 5618.DOI : 10.1103/PhysRevB.40.5602
Conference Papers
Electronic structure and optical properties of superlattices
Lecture notes of the School “Highlights on Spectroscopies of Semiconductors and Insulators
1989
Highlights on Spectroscopies of Semiconductors and Insulators, Castro Marino Lecce, August 31, September 12th, 1987.Book Chapters
Symmetry properties and selection rules of excitons in quantum wells
Symmetry in nature; Scuola Normale Superiore , Pisa, 1989.1988
Journal Articles
Effect of Subband Coupling on Exciton Binding-Energies and Oscillator-Strengths in GaAs-Ga$_{1-x}$Al$_x$As Quantum Wells
Europhysics Letters
1988
Vol. 6 , num. 3, p. 259 – 264.DOI : 10.1209/0295-5075/6/3/012
Gauge-Invariant 2-Photon Transitions in Quantum Wells
Physical Review B
1988
Vol. 38 , num. 9, p. 6206 – 6210.DOI : 10.1103/PhysRevB.38.6206
1987
Journal Articles
Hole subbands in strained GaAs-Ga1-xAlxAs quantum wells: Exact solution of the effective-mass equation
Physical Review B
1987
Vol. 36 , num. 11, p. 5887 – 5894.DOI : 10.1103/PhysRevB.36.5887
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