Publications

2024

Characteristics and ultra-high total ionizing dose response of 22nm fully depleted silicon-on-insulator

G. Termo; G. Borghello; F. Faccio; K. Kloukina; M. Caselle et al. 

Journal Of Instrumentation. 2024-03-01. Vol. 19, num. 3, p. C03039. DOI : 10.1088/1748-0221/19/03/C03039.

Integrated Wireless Power, Data Communication, and Thermal Sensing System for Autonomous Multisite Brain Implants

M. J. Karimi / A. Schmid; C. Dehollain (Dir.)  

Lausanne, EPFL, 2024. 

Few-shot Learning for Efficient and Effective Machine Learning Model Adaptation

A. J. J. Devos / J-M. Sallese (Dir.)  

Lausanne, EPFL, 2024. 

High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities

V. Sriskaran; J. Alozy; R. Ballabriga; M. Campbell; P. Christodoulou et al. 

Journal Of Instrumentation. 2024-02-01. Vol. 19, num. 2, p. P02024. DOI : 10.1088/1748-0221/19/02/P02024.

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

M-L. Wu / E. Charbon (Dir.)  

Lausanne, EPFL, 2024. 

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

U. Karaca / E. Charbon (Dir.)  

Lausanne, EPFL, 2024. 

2023

Design space of quantum dot spin qubits

A. Rassekh; M. Shalchian; J-M. Sallese; F. Jazaeri 

Physica B-Condensed Matter. 2023-10-01. Vol. 666, p. 415133. DOI : 10.1016/j.physb.2023.415133.

Low-Cost Portable Medical Device for the Detection and Quantification of Exosomes

D. Barrettino; C. Zumbuhl; R. Kummer; M. Thalmann; C. Balbi et al. 

2023-01-01. IEEE Sensors Conference, Vienna, AUSTRIA, OCT 29-NOV 01, 2023. DOI : 10.1109/SENSORS56945.2023.10325271.

Hardware Implementation of Digital Signal Processing Algorithms for Programmable Epilepsy Control Systems

K. Farhang Razi / A. Schmid (Dir.)  

Lausanne, EPFL, 2023. 

Quantum engineering and detection of advanced radiation beams

V. Leccese / F. Carbone; A. Mapelli (Dir.)  

Lausanne, EPFL, 2023. 

Investigation of thermoelectric nanomaterials

D. T. Osenberg / S. Mischler; L. V. S. Philippe (Dir.)  

Lausanne, EPFL, 2023. 

Integrated Electronics for Deep Implants to Remotely Monitor Hemodynamics

M. Besirli / M. Mattavelli; C. Dehollain (Dir.)  

Lausanne, EPFL, 2023. 

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

A. Koukab; J-M. Sallese 

US2023133476.

2023.

Compilation and Design Space Exploration of Dataflow Programs for Heterogeneous CPU-GPU Platforms

A. F. G. Bloch / M. Mattavelli (Dir.)  

Lausanne, EPFL, 2023. 

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

G. Termo; G. Borghello; F. Faccio; S. Michelis; A. Koukab et al. 

Journal Of Instrumentation. 2023-01-01. Vol. 18, num. 1, p. C01061. DOI : 10.1088/1748-0221/18/01/C01061.

The Timepix4 analog front-end design: Lessons learnt on fundamental limits to noise and time resolution in highly segmented hybrid pixel detectors

R. Ballabriga; J. A. Alozy; F. N. Bandi; G. Blaj; M. Campbell et al. 

Nuclear Instruments & Methods In Physics Research Section A-Accelerators Spectrometers Detectors And Associated Equipment. 2023-01-01. Vol. 1045, p. 167489. DOI : 10.1016/j.nima.2022.167489.

2022

Medipix4, a high granularity four sides buttable pixel readout chip for high resolution spectroscopic X-ray imaging at rates compatible with medical CT scans

V. Sriskaran / J-M. Sallese; A. Koukab (Dir.)  

Lausanne, EPFL, 2022. 

Tunneling Current Through a Double Quantum Dots System

A. Rassekh; M. Shalchian; J-M. Sallese; F. Jazaeri 

Ieee Access. 2022-01-01. Vol. 10, p. 75245-75256. DOI : 10.1109/ACCESS.2022.3190617.

Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells

P. FERDOWSI; F. JAZAERI; E. OCHOA-MARTINEZ; J. MILIC; M. SALIBA et al. 

Ieee Journal Of The Electron Devices Society. 2022-01-01. Vol. 10, p. 481-489. DOI : 10.1109/JEDS.2022.3184397.

Design Space of Negative Capacitance in FETs

A. Rassekh; F. Jazaeri; J-M. Sallese 

Ieee Transactions On Nanotechnology. 2022-01-01. Vol. 21, p. 236-243. DOI : 10.1109/TNANO.2022.3174471.

Analytic modelling of passive microfluidic mixers

A. Bonament; A. Prel; J-M. Sallese; C. Lallement; M. Madec 

Mathematical Biosciences And Engineering. 2022-01-01. Vol. 19, num. 4, p. 3892-3908. DOI : 10.3934/mbe.2022179.

Strategies, Techniques and Systems for powering low-maintenance and battery-free devices through Energy Harvesting and Wireless Power Transfer

R. La Rosa / C. Dehollain; A. P. Burg (Dir.)  

Lausanne, EPFL, 2022. 

Nonhysteretic Condition in Negative Capacitance Junctionless FETs

A. Rassekh; F. Jazaeri; J-M. Sallese 

Ieee Transactions On Electron Devices. 2022. Vol. 69, num. 2, p. 820-826. DOI : 10.1109/TED.2021.3133193.

2021

Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

A. Yesayan; S. Petrosyan; A. Papiyan; Sallese 

Journal Of Contemporary Physics-Armenian Academy Of Sciences. 2021-10-01. Vol. 56, num. 4, p. 324-331. DOI : 10.3103/S1068337221040071.

Charge-based modeling of field effect transistors, Make it easy

J-M. Sallese 

2021-01-01. Joint International EUROSOI Workshop / International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, FRANCE, Sep 01-03, 2021. DOI : 10.1109/EuroSOI-ULIS53016.2021.9560680.

Capacitive sensor to monitor the level of drug inside an injector pen

S. P. F. Joly / C. Dehollain; A. P. G. Lepple-Wienhues (Dir.)  

Lausanne, EPFL, 2021. 

Compact Analytical Model of Nanowire Junctionless ISFET

A. Yesayan; J-M. Sallese 

2021-01-01. 28th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), ELECTR NETWORK, Jun 24-26, 2021. p. 31-34. DOI : 10.23919/MIXDES52406.2021.9497641.

Cryogenic MOSFET Modeling for Large-Scale Quantum Computing

A. L. M. Beckers / C. Enz (Dir.)  

Lausanne, EPFL, 2021. 

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

C. Zhang / C. Enz (Dir.)  

Lausanne, EPFL, 2021. 

Towards Single Photon Detection with Amorphous Silicon Based Microchannel Plates

J. C. I. Löffler / C. Ballif; N. Würsch (Dir.)  

Lausanne, EPFL, 2021. 

High-Speed ADC Design and Optimization for Wireline Links

A. Akkaya / Y. Leblebici; A. P. Burg (Dir.)  

Lausanne, EPFL, 2021. 

A novel approach for SPICE modeling of light and radiation effects in ICs

C. Rossi / J-M. Sallese (Dir.)  

Lausanne, EPFL, 2021. 

2020

Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

N. Makris; M. Bucher; L. Chevas; F. Jazaeri; J-M. Sallese 

Ieee Transactions On Electron Devices. 2020-11-01. Vol. 67, num. 11, p. 4658-4661. DOI : 10.1109/TED.2020.3025841.

New architecture for the analog front-end of Medipix4

V. Sriskaran; J. Alozy; R. Ballabriga; M. Campbell; N. Egidos et al. 

Nuclear Instruments & Methods In Physics Research Section A-Accelerators Spectrometers Detectors And Associated Equipment. 2020-10-21. Vol. 978, p. 164412. DOI : 10.1016/j.nima.2020.164412.

High Precision Capacitive Moisture Sensor for Polymers: Modeling and Experiments

R. M. Dos Santos; J-M. Sallese; M. Mattavelli; A. S. Nunes; C. Dehollain et al. 

IEEE Sensors Journal. 2020-03-15. Vol. 20, num. 6, p. 3032-3039. DOI : 10.1109/JSEN.2019.2957108.

Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

A. Yesayan; F. Jazaeri; J-M. Sallese 

Ieee Transactions On Electron Devices. 2020-03-01. Vol. 67, num. 3, p. 1157-1164. DOI : 10.1109/TED.2020.2965167.

Transcapacitances in EPFL HEMT Model

F. Jazaeri; M. Shalchian; J-M. Sallese 

Ieee Transactions On Electron Devices. 2020-02-01. Vol. 67, num. 2, p. 758-762. DOI : 10.1109/TED.2019.2958180.

Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators

C. Rossi; J-M. Sallese 

2020-01-01. Conference on Physics and Simulation of Optoelectronic Devices XXVIII, San Francisco, CA, Feb 03-06, 2020. p. 112740X. DOI : 10.1117/12.2545771.

Compact Model for Continuous Microfluidic Mixer

A. Bonament; A. Prel; J-M. Sallese; M. Madec; C. Lallement 

2020-01-01. 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), ELECTR NETWORK, Jun 25-27, 2020. p. 35-39. DOI : 10.23919/MIXDES49814.2020.9155997.

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

A. Rassekh; J-M. Sallese; F. Jazaeri; M. Fathipour; A. M. Ionescu 

Ieee Journal Of The Electron Devices Society. 2020-01-01. Vol. 8, p. 939-947. DOI : 10.1109/JEDS.2020.3020976.

Modeling for Ultra Low Noise CMOS Image Sensors

R. Capoccia / C. Enz (Dir.)  

Lausanne, EPFL, 2020. 

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

M. Rupakula / M. A. Ionescu (Dir.)  

Lausanne, EPFL, 2020. 

Enhanced-performance integrated Resonant Switched-Capacitor and Buck DC-DC converters for application in extreme radiation and magnetic field environments

G. Ripamonti / M. Kayal; A. Koukab (Dir.)  

Lausanne, EPFL, 2020. 

Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

C. Rossi; J-M. Sallese 

Ieee Journal Of The Electron Devices Society. 2020-01-01. Vol. 8, num. 1, p. 376-384. DOI : 10.1109/JEDS.2019.2956572.

A New Concept of Sensor for Ultra-high Levels of Radiation based on Radiation Enhanced Oxidation of Copper Thin-films

G. Gorine / J-M. Sallese; F. Ravotti (Dir.)  

Lausanne, EPFL, 2020. 

Sweat monitoring with CMOS compatible technology: ISFETS and beyond

F. Bellando / M. A. Ionescu (Dir.)  

Lausanne, EPFL, 2020. 

On Smart-Buildings and their Integration into the Smart-Grid

O. V. H. Van Cutsem / M. Kayal (Dir.)  

Lausanne, EPFL, 2020. 

2019

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

A. Rassekh; F. Jazaeri; M. Fathipour; J-M. Sallese 

IEEE Transactions on Electron Devices. 2019-11-01. Vol. 66, num. 11, p. 4653-4659. DOI : 10.1109/TED.2019.2944193.

Radiation enhanced oxidation of proton-irradiated copper thin-films: Towards a new concept of ultra-high radiation dosimetry

G. Gorine; G. Pezzullo; D. Bouvet; F. Ravotti; J-M. Sallese 

Aip Advances. 2019-08-01. Vol. 9, num. 8, p. 085217. DOI : 10.1063/1.5096606.

FCC-hh: The Hadron Collider: Future Circular Collider Conceptual Design Report Volume 3

A. Abada; M. Abbrescia; S. S. AbdusSalam; I. Abdyukhanov; J. Abelleira Fernandez et al. 

European Physical Journal-Special Topics. 2019-07-01. Vol. 228, num. 4, p. 755-1107. DOI : 10.1140/epjst/e2019-900087-0.

HE-LHC: The High-Energy Large Hadron Collider Future Circular Collider Conceptual Design Report Volume 4

A. Abada; M. Abbrescia; S. S. AbdusSalam; I. Abdyukhanov; J. Abelleira Fernandez et al. 

The European Physical Journal Special Topics. 2019-07-01. Vol. 228, num. 5, p. 1109-1382. DOI : 10.1140/epjst/e2019-900088-6.

FCC Physics Opportunities: Future Circular Collider Conceptual Design Report Volume 1

A. Abada; M. Abbrescia; S. S. AbdusSalam; I. Abdyukhanov; J. A. Fernandez et al. 

European Physical Journal C. 2019-06-05. Vol. 79, num. 6, p. 474. DOI : 10.1140/epjc/s10052-019-6904-3.

FCC-ee: The Lepton Collider: Future Circular Collider Conceptual Design Report Volume 2

A. Abada; M. Abbrescia; S. S. AbdusSalam; I. Abdyukhanov; J. A. Fernandez et al. 

European Physical Journal-Special Topics. 2019-06-01. Vol. 228, num. 2, p. 261-623. DOI : 10.1140/epjst/e2019-900045-4.

Charge-Based EPFL HEMT Model

F. Jazaeri; J-M. Sallese 

Ieee Transactions On Electron Devices. 2019-03-01. Vol. 66, num. 3, p. 1218-1229. DOI : 10.1109/TED.2019.2893302.

Transient current technique for charged traps detection in silicon bonded interfaces

J. Bronuzzi; D. Bouvet; C. Charrier; F. Fournel; M. F. Garcia et al. 

AIP Advances. 2019-02-01. Vol. 9, num. 2, p. 025307. DOI : 10.1063/1.5079999.

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

F. Jazaeri; A. Beckers; A. Tajalli; J-M. Sallese 

2019-01-01. 26th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Rzeszow, POLAND, Jun 27-29, 2019. p. 15-25. DOI : 10.23919/MIXDES.2019.8787164.

FOSS EKV2.6 Verilog-A Compact MOSFET Model

W. Grabinski; M. Pavanello; M. de Souza; D. Tomaszewski; J. Malesinska et al. 

2019-01-01. 49th European Solid-State Device Research Conference (ESSDERC), Cracow, POLAND, Sep 23-26, 2019. p. 190-193. DOI : 10.1109/ESSDERC.2019.8901822.

CJM: A Compact Model for Double-Gate Junction FETs

N. Makris; M. Bucher; F. Jazaeri; J-M. Sallese 

Ieee Journal Of The Electron Devices Society. 2019-01-01. Vol. 7, num. 1, p. 1191-1199. DOI : 10.1109/JEDS.2019.2944817.

High Speed SAR ADC Architectures in 28nm FDSOI CMOS

M. Kilic / Y. Leblebici (Dir.)  

Lausanne, EPFL, 2019. 

Optical microsystems for genetically engineered biosensors. Case study: Glucose monitoring

B. J. Vinchhi / C. Dehollain; U. De Marchi (Dir.)  

Lausanne, EPFL, 2019. 

Integration of microfluidics and multimodal optics for translational bioanalytics

D. Migliozzi / M. Gijs (Dir.)  

Lausanne, EPFL, 2019. 

Research and development of an intelligent particle tracker detector electronic system

A. Caratelli / Y. Leblebici; K. Kloukinas (Dir.)  

Lausanne, EPFL, 2019. 

Wearable System for Real-Time Sensing of Biomarkers in Human Sweat

J. Zhang / M. A. Ionescu; M. Mazza (Dir.)  

Lausanne, EPFL, 2019. 

Full SPICE Simulation of a CMOS Active Pixel Sensor with Generalized Devices

C. Rossi; J-M. Sallese 

2019-01-01. Latin American Electron Devices Conference (LAEDC), Armenia, COLOMBIA, February 24-27, 2019. p. 72-75. DOI : 10.1109/LAED.2019.8714732.

Modeling Dielectric Constant Variability in Aggregate Polymers from CV Measurements

R. M. Dos Santos; C. Dehollain; M. Mattavelli; D. Barrettino; J-M. Sallese 

2019-01-01. Latin American Electron Devices Conference (LAEDC), Armenia, Colombia, February 24-27, 2019. p. 100-103. DOI : 10.1109/LAED.2019.8714730.

Analysis of photosensor frontends for biomedical applications: a focus on noise

P. S. Gosselin / M. Kayal; A. Koukab (Dir.)  

Lausanne, EPFL, 2019. 

Implantable Autonomous Wireless Closed-loop Bio-electronics for Epilepsy Control

R. Ranjandish / A. Schmid (Dir.)  

Lausanne, EPFL, 2019. 

Wireless Power Transfer and Data Communication for Implantable Autonomous Monitoring and Detection of Epilepsy In Vivo

K. Türe / C. Dehollain; F. Maloberti (Dir.)  

Lausanne, EPFL, 2019. 

Transadmittance Efficiency under NQS Operation in Asymmetric Double Gate FDSOI MOSFET

S. El Ghouli; J-M. Sallese; A. Juge; P. Scheer; C. Lallement 

Ieee Transactions On Electron Devices. 2019-01-01. Vol. 66, num. 1, p. 300-307. DOI : 10.1109/TED.2018.2882539.

2018

Analog RF and mm-Wave Design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA

S. El Ghouli; W. Grabinski; J. M. Sallese; A. Juge; C. Lallement 

2018-01-01. 25th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), Gdynia, Poland, Jun 21-23, 2018. p. 57-62. DOI : 10.23919/MIXDES.2018.8436730.

Modeling Surface Recombination with Enhanced Devices Network for Optoelectronics

C. Rossi; P. Buccella; C. Stefanucci; J-M. Sallese 

2018-01-01. 16th IEEE International New Circuits and Systems Conference (NEWCAS), Montreal, CANADA, Jun 24-27, 2018. p. 35-39. DOI : 10.1109/NEWCAS.2018.8585606.

High Precision Capacitive Moisture Sensor for Polymers

R. M. Dos Santos; J-M. Sallese; M. Mattavelli; C. Dehollain; D. Barrettino 

2018-01-01. 17th IEEE SENSORS Conference, New Delhi, INDIA, Oct 28-31, 2018. p. 212-215. DOI : 10.1109/ICSENS.2018.8589775.

SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

C. Rossi; P. Buccella; C. Stefanucci; J-M. Sallese 

Ieee Journal Of The Electron Devices Society. 2018-01-01. Vol. 6, num. 1, p. 987-995. DOI : 10.1109/JEDS.2018.2817286.

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

J. Bronuzzi / J-M. Sallese; A. Mapelli (Dir.)  

Lausanne, EPFL, 2018. 

Ultrahigh Fluence Radiation Monitoring Technology for the Future Circular Collider at CERN

G. Gorine; G. Pezzullo; I. Mandic; A. Jazbec; L. Snoj et al. 

IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 2018. Vol. 65, num. 8, p. 1583-1590. DOI : 10.1109/TNS.2018.2797540.

Principle of the electrically induced Transient Current Technique

J. Bronuzzi; M. Moll; D. Bouvet; A. Mapelli; J. Sallese 

Journal of Instrumentation. 2018. Vol. 13, p. P05021. DOI : 10.1088/1748-0221/13/05/P05021.

Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs-Part II: Total Charges and Transcapacitances

N. Makris; F. Jazaeri; J-M. Sallese; M. Bucher 

IEEE Transactions on Electron Devices. 2018. Vol. 65, num. 7, p. 2751-2756. DOI : 10.1109/TED.2018.2838090.

Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement

M. Shalchian; F. Jazaeri; J. Sallese 

IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018. Vol. 65, num. 9, p. 4009-4014. DOI : 10.1109/TED.2018.2854905.

Charge-based Model for Junction FETs

F. Jazaeri; N. Makris; A. Saeidi; M. Bucher; J. Sallese 

IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018. Vol. 65, num. 7, p. 2694-2698. DOI : 10.1109/TED.2018.2830972.

Wearable System with Integrated Passive Microfluidics for Real-Time Electrolyte Sensing in Human Sweat

E. A. Garcia Cordero / M. A. Ionescu (Dir.)  

Lausanne, EPFL, 2018. 

Development and Characterisation of Silicon Photomultiplier Multichannel Arrays for the Readout of a Large Scale Scintillating Fibre Tracker

A. Kuonen / A. Bay; G. Haefeli (Dir.)  

Lausanne, EPFL, 2018. 

Learning-Based Hardware Design for Data Acquisition Systems

C. Aprile / V. Cevher; Y. Leblebici (Dir.)  

Lausanne, EPFL, 2018. 

Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices

E. A. Casu / M. A. Ionescu; M. Fernandez-Bolanos Badia (Dir.)  

Lausanne, EPFL, 2018. 

Experimental g(m)/I-D Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET

S. El Ghouli; D. Rideau; F. Monsieur; P. Scheer; G. Gouget et al. 

IEEE Transactions On Electron Devices. 2018. Vol. 65, num. 1, p. 11-18. DOI : 10.1109/Ted.2017.2772804.

An Energy Efficient Power Converter for Zero Power Wearable Devices

M. Ataei Ashtiani / P-A. Farine; A. Boegli (Dir.)  

Lausanne, EPFL, 2018. 

Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs—Part I: Drain Current and Transconductances

N. Markis; F. Jazaeri; J-M. Sallese; R. K. Sharma; M. Bucher 

IEEE Transactions on Electron Devices. 2018. Vol. 65, num. 7, p. 2744-2750. DOI : 10.1109/TED.2018.2838101.

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

F. Jazaeri; J-M. Sallese 

Cambridge University Press, 2018.

2017

Fabrication, Characterization and Integration of Resistive Random Access Memories

J. Sandrini / Y. Leblebici (Dir.)  

Lausanne, EPFL, 2017. 

A Nine Decade Femtoampere Current to Frequency Converter

E. Voulgari / M. Kayal; F. Szoncsó (Dir.)  

Lausanne, EPFL, 2017. 

Robust Eye Tracking Based on Adaptive Fusion of Multiple Cameras

N. M. Arar / J-P. Thiran (Dir.)  

Lausanne, EPFL, 2017. 

Electronic solutions for power system emulation

G. O. Lanz / M. Kayal (Dir.)  

Lausanne, EPFL, 2017. 

Micromechanical resonators with sub-micron gaps filled with high-k dielectrics

M. d. l. C. Maqueda López / M. A. Ionescu; M. Fernandez-Bolanos Badia (Dir.)  

Lausanne, EPFL, 2017. 

Design Techniques for Ultra High Frequency Clock Generation in 28 nm FDSOI Technology

H. G. Özsema / Y. Leblebici (Dir.)  

Lausanne, EPFL, 2017. 

Electronics Emulation for Real-Time Fault Location in Power Systems

F. P. Gaugaz / M. Kayal; F. Krummenacher (Dir.)  

Lausanne, EPFL, 2017. 

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

C. Alper / M. A. Ionescu; P. Palestri (Dir.)  

Lausanne, EPFL, 2017. 

2016

A new constituent of electrostatic energy in semiconductors

J-M. Sallese 

The European Physical Journal B. 2016-06-01. Vol. 89, num. 6, p. 136. DOI : 10.1140/epjb/e2016-60865-4.

Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

J. Bronuzzi; A. Mapelli; M. Moll; J-M. Sallese 

Journal of Instrumentation. 2016. Vol. 11, p. P08016. DOI : 10.1088/1748-0221/11/08/P08016.

Analysis of Substrate Currents Propagation in HVCMOS technology

C. Stefanucci; P. Buccella; E. Seebacher; A. Steinmair; M. Kayal et al. 

2016. 46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), Lausanne, Switzerland, September 12-15, 2016. p. 319-322. DOI : 10.1109/ESSDERC.2016.7599650.

Methodology for 3-D Substrate Network Extraction for SPICE Simulation of Parasitic Currents in Smart Power ICs

P. Buccella; C. Stefanucci; H. Zou; Y. Moursy; R. Iskander et al. 

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2016. Vol. 35, num. 9, p. 1489-1502. DOI : 10.1109/Tcad.2015.2513008.

Graphene Field Effect Devices and Circuits

C. B. Nyffeler / Y. Leblebici (Dir.)  

Lausanne, EPFL, 2016.