Most modern computer chips rely on in-chip SRAMs and off-chip DRAMs, but these face limitations, including volatility, low bit density, and data refresh. To address these challenges, new memory technologies have emerged that are non-volatile and dense and can replace any type of memory. These technologies use programmable resistance based on different physical phenomena such as magnetism (MRAMs), phase change (PCMs), or conductive filaments (ReRAMs).
We explore and integrate these technologies with SRAMs, creating hybrid cache memories and compatible RRAM-SRAM in-memory computing.
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