MoS2 transistors

We recently demonstrated that single-layer MoS₂ can be used to fabricate transistors with extremely low leakage currents (25 fA/um). Single-layer MoS₂ is 0.65 nm thick and is similar to graphene, except that it is a direct gap semiconductor, with a band gap of 1.8 eV. In addition to low leakage for 0.5 V supply voltage, our transistors also show mobility comparable to 2 nm thin Si films and on/off ratio higher than 10⁸. All this at room temperature.

We believe that single layer MoS₂ could therefore complement graphene in applications that require a band gap, for example in electronics.

Our single-layer MoS₂ was produced by scotch-tape peeling of naturally occuring molybdenite crystals.