Publications

2024

Journal Articles

Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures

G. Pasquale; Z. Sun; G. Migliato Marega; K. Watanabe; T. Taniguchi et al. 

Nature Nanotechnology. 2024. DOI : 10.1038/s41565-024-01717-y.

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CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

D. S. Schneider; L. Lucchesi; E. Reato; Z. Wang; A. Piacentini et al. 

Npj 2D Materials And Applications. 2024. Vol. 8, num. 1, p. 35. DOI : 10.1038/s41699-024-00471-y.

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High-κ Wide-Gap Layered Dielectric for Two-Dimensional van der Waals Heterostructures

A. Söll; E. Lopriore; A. K. Ottesen; J. Luxa; G. Pasquale et al. 

ACS Nano. 2024. Vol. 18, num. 15, p. 10397 – 10406. DOI : 10.1021/acsnano.3c10411.

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Nanofluidic logic with mechano-ionic memristive switches

T. Emmerich; Y. Teng; N. Ronceray; E. Lopriore; R. Chiesa et al. 

Nature Electronics. 2024. DOI : 10.1038/s41928-024-01137-9.

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Composition-tunable transition metal dichalcogenide nanosheets via a scalable, solution-processable method

R. A. Wells; N. J. Diercks; V. Boureau; Z. Wang; Y. Zhao et al. 

Nanoscale Horizons. 2024. DOI : 10.1039/d3nh00477e.

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2023

Journal Articles

Electrically tunable dipolar interactions between layer-hybridized excitons

D. Erkensten; S. Brem; R. Perea-Causin; J. Hagel; F. Tagarelli et al. 

Nanoscale. 2023. DOI : 10.1039/d3nr01049j.

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Electrical control of hybrid exciton transport in a van der Waals heterostructure

F. Tagarelli; E. Lopriore; D. Erkensten; R. Perea-Causín; S. Brem et al. 

Nature Photonics. 2023. DOI : 10.1038/s41566-023-01198-w.

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High durability and stability of 2D nanofluidic devices for long-term single-molecule sensing

M. Thakur; N. Cai; M. Zhang; Y. Teng; A. Chernev et al. 

Npj 2D Materials And Applications. 2023. Vol. 7, num. 1, p. 11. DOI : 10.1038/s41699-023-00373-5.

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Substitutional p‐type Doping in NbS2‐MoS2 Lateral Heterostructures Grown by MOCVD

Z. Wang; M. Tripathi; Z. Golsanamlou; P. Kumari; G. Lovarelli et al. 

Advanced Materials. 2023.  p. 2209371. DOI : 10.1002/adma.202209371.

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Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Y. Zhao; M. Tripathi; K. Čerņevičs; A. Avsar; H. G. Ji et al. 

Nature Communications. 2023. Vol. 14, num. 1, p. 44. DOI : 10.1038/s41467-022-35651-1.

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Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material

C-Y. Cheon; Z. Sun; J. Cao; J. F. Gonzalez Marin; M. Tripathi et al. 

npj 2D Materials and Applications. 2023. Vol. 7, p. 74 (2023). DOI : 10.1038/s41699-023-00435-8.

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Electrical detection of the flat-band dispersion in van der Waals field-effect structures

G. Pasquale; E. Lopriore; Z. Sun; K. Čerņevičs; F. Tagarelli et al. 

Nature Nanotechnology. 2023. DOI : 10.1038/s41565-023-01489-x.

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A large-scale integrated vector–matrix multiplication processor based on monolayer molybdenum disulfide memories

G. Migliato Marega; H. G. Ji; Z. Wang; G. Pasquale; M. Tripathi et al. 

Nature Electronics. 2023. DOI : 10.1038/s41928-023-01064-1.

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How to Achieve Large-Area Ultra-Fast Operation of MoS 2 Monolayer Flash Memories?

G. M. Marega; Z. Wang; Y. Zhao; H. G. Ji; A. Ottesen et al. 

IEEE Nanotechnology Magazine. 2023.  p. 1 – 5. DOI : 10.1109/MNANO.2023.3297118.

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2022

Journal Articles

Flat-Band-Induced Many-Body Interactions and Exciton Complexes in a Layered Semiconductor

Z. Wang; C-Y. Cheon; M. Tripathi; G. M. Marega; Y. Zhao et al. 

Nano Letters. 2022. Vol. 22, num. 22, p. 8883 – 8891. DOI : 10.1021/acs.nanolett.2c02965.

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Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

G. Giusi; G. M. Marega; A. Kis; G. Iannaccone 

Ieee Transactions On Electron Devices. 2022. DOI : 10.1109/TED.2022.3208804.

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Room-temperature electrical control of polarization and emission angle in a cavity-integrated 2D pulsed LED

J. F. Gonzalez Marin; D. Unuchek; Z. Sun; C. Y. Cheon; F. Tagarelli et al. 

Nature Communications. 2022. Vol. 13, num. 1, p. 1 – 9, 4884. DOI : 10.1038/s41467-022-32292-2.

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Stable Al2O3 Encapsulation of MoS2 ‐FETs Enabled by CVD Grown h‐BN

A. Piacentini; D. Marian; D. S. Schneider; E. González Marín; Z. Wang et al. 

Advanced Electronic Materials. 2022.  p. 2200123. DOI : 10.1002/aelm.202200123.

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Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates

E. Reato; P. Palacios; B. Uzlu; M. Saeed; A. Grundmann et al. 

Advanced Materials. 2022.  p. 2108469. DOI : 10.1002/adma.202108469.

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Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

G. Migliato Marega; Z. Wang; M. Paliy; G. Giusi; S. Strangio et al. 

ACS Nano. 2022. DOI : 10.1021/acsnano.1c07065.

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Excitonic transport driven by repulsive dipolar interaction in a van der Waals heterostructure

Z. Sun; A. Ciarrocchi; F. Tagarelli; J. F. Gonzalez Marin; K. Watanabe et al. 

Nature Photonics. 2022. Vol. 16, p. 79 – 85. DOI : 10.1038/s41566-021-00908-6.

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2021

Journal Articles

How we made the 2D transistor

A. Kis 

Nature Electronics. 2021. Vol. 4, p. 853. DOI : 10.1038/s41928-021-00675-w.

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Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition

Z. Wang; C-Y. Cheon; M. Tripathi; G. M. Marega; Y. Zhao et al. 

ACS Nano. 2021. Vol. 15, num. 11, p. 18403 – 18410. DOI : 10.1021/acsnano.1c07956.

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Correlating chemical and electronic states from quantitative photoemission electron microscopy of transition-metal dichalcogenide heterostructures

O. Renault; H. Kim; D. Dumcenco; D. Unuchek; N. Chevalier et al. 

Journal of Vacuum Science & Technology. 2021. Vol. A39, num. 5, p. 053210. DOI : 10.1116/6.0001135.

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Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides

M. Zhang; M. Lihter; T-H. Chen; M. Macha; A. Rayabharam et al. 

Acs Nano. 2021. Vol. 15, num. 4, p. 7168 – 7178. DOI : 10.1021/acsnano.1c00373.

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Electrochemical Functionalization of Selectively Addressed MoS2 Nanoribbons for Sensor Device Fabrication

M. Lihter; M. Graf; D. Ivekovic; M. Zhang; T-H. Shen et al. 

Acs Applied Nano Materials. 2021. Vol. 4, num. 2, p. 1076 – 1084. DOI : 10.1021/acsanm.0c02628.

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2020

Journal Articles

Logic-in-memory based on an atomically thin semiconductor

G. Migliato Marega; Y. Zhao; A. Avsar; Z. Wang; M. Tripathi et al. 

Nature. 2020. Vol. 587, num. 7832, p. 72 – 77. DOI : 10.1038/s41586-020-2861-0.

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Probing magnetism in atomically thin semiconducting PtSe2

A. Avsar; C-Y. Cheon; M. Pizzochero; M. Tripathi; A. Ciarrocchi et al. 

Nature Communications. 2020. Vol. 11, num. 1, p. 4806. DOI : 10.1038/s41467-020-18521-6.

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Strongly Coupled Coherent Phonons in Single-Layer MoS2

C. Trovatello; H. P. C. Miranda; A. Molina-Sanchez; R. Borrego-Varillas; C. Manzoni et al. 

Acs Nano. 2020. Vol. 14, num. 5, p. 5700 – 5710. DOI : 10.1021/acsnano.0c00309.

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Wafer-Scale Fabrication of Nanopore Devices for Single-Molecule DNA Biosensing using MoS2

M. Thakur; M. Macha; A. Chernev; M. Graf; M. Lihter et al. 

Small Methods. 2020.  p. 2000072. DOI : 10.1002/smtd.202000072.

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Quantitative Mapping of the Charge Density in a Monolayer of MoS2 at Atomic Resolution by Off-Axis Electron Holography

V. Boureau; B. Sklenard; R. McLeod; D. Ovchinnikov; D. Dumcenco et al. 

ACS Nano. 2020. Vol. 14, num. 1, p. 524 – 530. DOI : 10.1021/acsnano.9b06716.

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2019

Journal Articles

Quantitative Nanoscale Absorption Mapping: A Novel Technique To Probe Optical Absorption of Two-Dimensional Materials

M. Negri; L. Francaviglia; D. Dumcenco; M. Bosi; D. Kaplan et al. 

Nano Letters. 2019. Vol. 20, num. 1, p. 567 – 576. DOI : 10.1021/acs.nanolett.9b04304.

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Waveguide-Based Platform for Large-FOV Imaging of Optically Active Defects in 2D Materials

E. Glushkov; A. Archetti; A. Stroganov; J. Comtet; M. Thakur et al. 

Acs Photonics. 2019. Vol. 6, num. 12, p. 3100 – 3107. DOI : 10.1021/acsphotonics.9b01103.

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Self-sensing, tunable monolayer MoS2 nanoelectromechanical resonators

S. Manzeli; D. Dumcenco; G. Migliato Marega; A. Kis 

Nature Communications. 2019. Vol. 10, num. 1, p. 4831. DOI : 10.1038/s41467-019-12795-1.

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Valley-polarized exciton currents in a van der Waals heterostructure

D. Unuchek; A. Ciarrocchi; A. Avsar; Z. Sun; K. Watanabe et al. 

Nature Nanotechnology. 2019. Vol. 14, p. 1104 – 1109. DOI : 10.1038/s41565-019-0559-y.

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Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

H. Cun; M. Macha; H. Kim; K. Liu; Y. Zhao et al. 

Nano Research. 2019. Vol. 12, num. 10, p. 2646 – 2652. DOI : 10.1007/s12274-019-2502-9.

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Light-Enhanced Blue Energy Generation Using MoS2 Nanopores

M. Graf; M. Lihter; D. Unuchek; A. Sarathy; J-P. Leburton et al. 

Joule. 2019. Vol. 3, num. 6, p. 1549 – 1564. DOI : 10.1016/j.joule.2019.04.011.

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Defect induced, layer-modulated magnetism in ultrathin metallic PtSe2

A. Avsar; A. Ciarrocchi; M. Pizzochero; D. Unuchek; O. V. Yazyev et al. 

Nature Nanotechnology. 2019. Vol. 14, p. 674 – 678. DOI : 10.1038/s41565-019-0467-1.

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MoS2 photodetectors integrated with photonic circuits

J. F. Gonzalez Marin; D. Unuchek; K. Watanabe; T. Taniguchi; A. Kis 

npj 2D Materials and Applications. 2019. Vol. 3, num. 1, p. 14. DOI : 10.1038/s41699-019-0096-4.

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Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography

X. Zheng; A. Calò; E. Albisetti; X. Liu; A. S. M. Alharbi et al. 

Nature Electronics. 2019. Vol. 2, num. 1, p. 17 – 25. DOI : 10.1038/s41928-018-0191-0.

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Non equilibrium anisotropic excitons in atomically thin ReS2

J. M. Urban; M. Baranowski; A. Kuc; L. Klopotowski; A. Surrente et al. 

2D Materials. 2019. Vol. 6, num. 1, p. 015012. DOI : 10.1088/2053-1583/aae9b9.

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Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures

A. Ciarrocchi; D. Unuchek; A. Avsar; K. Watanabe; T. Taniguchi et al. 

Nature Photonics. 2019. Vol. 13, p. 131 – 136. DOI : 10.1038/s41566-018-0325-y.

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2018

Journal Articles

Air and Water-Stable n-Type Doping and Encapsulation of Flexible MoS2 Devices with SU8

Y-C. Kung; N. Hosseini; D. Dumcenco; G. E. Fantner; A. Kis 

Advanced Electronic Materials. 2018.  p. 1800492. DOI : 10.1002/aelm.201800492.

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Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)

M-W. Chen; H. Kim; C. Bernard; M. Pizzochero; J. Zaldı́var et al. 

ACS Nano. 2018. Vol. 12, num. 11, p. 11161 – 11168. DOI : 10.1021/acsnano.8b05628.

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Room-temperature electrical control of exciton flux in a van der Waals heterostructure

D. Unuchek; A. Ciarrocchi; A. Avsar; K. Watanabe; T. Taniguchi et al. 

Nature. 2018. Vol. 560, num. 7718, p. 340 – 344. DOI : 10.1038/s41586-018-0357-y.

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Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide

A. Ciarrocchi; A. Avsar; D. Ovchinnikov; A. Kis 

Nature Communications. 2018. Vol. 9, num. 1, p. 919. DOI : 10.1038/s41467-018-03436-0.

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Impact of photodoping on inter- and intralayer exciton emission in a MoS2/MoSe2/MoS2 heterostructure

N. Zhang; A. Surrente; M. Baranowski; D. Dumcenco; Y. Kung et al. 

Applied Physics Letters. 2018. Vol. 113, num. 6, p. 062107. DOI : 10.1063/1.5043098.

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Intervalley Scattering of Interlayer Excitons in a MoS2/MoSe2/MoS2 Heterostructure in High Magnetic Field

A. Surrente; L. Klopotowski; N. Zhang; M. Baranowski; A. Mitioglu et al. 

NANO LETTERS. 2018. Vol. 18, num. 6, p. 3994 – 4000. DOI : 10.1021/acs.nanolett.8b01484.

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Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion

M-W. Chen; H. Kim; D. Ovchinnikov; A. Kuc; T. Heine et al. 

npj 2D Materials and Applications. 2018. Vol. 2, num. 1, p. 2. DOI : 10.1038/s41699-017-0047-x.

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Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts

A. Avsar; K. Marinov; E. G. Marin; G. Iannaccone; K. Watanabe et al. 

Advanced Materials. 2018. Vol. 30, num. 18, p. 1707200. DOI : 10.1002/adma.201707200.

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2017

Journal Articles

Unconventional electroabsorption in monolayer MoS2

D. Vella; D. Ovchinnikov; N. Martino; V. Vega-Mayoral; D. Dumcenco et al. 

2D Materials. 2017. Vol. 4, num. 2, p. 021005. DOI : 10.1088/2053-1583/aa5784.

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Resolving the spin splitting in the conduction band of monolayer MoS2

K. Marinov; A. Avsar; K. Watanabe; T. Taniguchi; A. Kis 

Nature Communications. 2017. Vol. 8, num. 1, p. 1938. DOI : 10.1038/s41467-017-02047-5.

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Probing the Interlayer Exciton Physics in a MoS2/MoSe2/MoS2 van der Waals Heterostructure

M. Baranowski; A. Surrente; L. Klopotowski; J. M. Urban; N. Zhang et al. 

Nano Letters. 2017. Vol. 17, num. 10, p. 6360 – 6365. DOI : 10.1021/acs.nanolett.7b03184.

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Dark excitons and the elusive valley polarization in transition metal dichalcogenides

M. Baranowski; A. Surrente; D. K. Maude; M. Ballottin; A. A. Mitioglu et al. 

2D Materials. 2017. Vol. 4, num. 2, p. 025016. DOI : 10.1088/2053-1583/aa58a0.

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High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

F. Ghasemi; R. Frisenda; D. Dumcenco; A. Kis; D. Perez De Lara et al. 

Electronics. 2017. Vol. 6, num. 2, p. 28. DOI : 10.3390/electronics6020028.

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Field-induced charge separation dynamics in monolayer MoS2

D. Vella; D. Ovchinnikov; D. Viola; D. Dumcenco; Y. C. Kung et al. 

2D Materials. 2017. Vol. 4, num. 3, p. 035017. DOI : 10.1088/2053-1583/aa7ce0.

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On current transients in MoS2 Field Effect Transistors

M. Macucci; G. Tambellini; D. Ovchinnikov; A. Kis; G. Iannaccone et al. 

Scientific Reports. 2017. Vol. 7, num. 1, p. 11575. DOI : 10.1038/s41598-017-11930-6.

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Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS2/MoSe2/MoS2 heterostructures

A. Surrente; D. Dumcenco; Z. Yang; A. Kuc; Y. Jing et al. 

Nano Letters. 2017. Vol. 17, num. 7, p. 4130 – 4136. DOI : 10.1021/acs.nanolett.7b00904.

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Your new travel guide to the flatlands

A. Kis 

Npj 2D Materials And Applications. 2017. Vol. 1, p. 1. DOI : 10.1038/s41699-017-0006-6.

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Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials

R. Frisenda; Y. Niu; P. Gant; A. J. Molina-Mendoza; R. Schmidt et al. 

Journal Of Physics D-Applied Physics. 2017. Vol. 50, num. 7, p. 074002. DOI : 10.1088/1361-6463/aa5256.

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Suppressing Nucleation in Metal–Organic Chemical Vapor Deposition of MoS2

H. Kim; D. Ovchinnikov; D. Deiana; D. Unuchek; A. Kis 

Nano Letters. 2017. Vol. 17, num. 8, p. 5056 – 5063. DOI : 10.1021/acs.nanolett.7b02311.

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Highly Oriented Atomically Thin Ambipolar MoSe2

M-W. Chen; D. Ovchinnikov; S. Lazar; M. Pizzochero; M. B. Whitwick et al. 

ACS Nano. 2017. Vol. 11, num. 6, p. 6355 – 6361. DOI : 10.1021/acsnano.7b02726.

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Optospintronics in Graphene via Proximity Coupling

A. Avsar; D. Unuchek; J. Liu; O. L. Sanchez; K. Watanabe et al. 

ACS Nano. 2017. Vol. 11, num. 11, p. 11678 – 11686. DOI : 10.1021/acsnano.7b06800.

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2016

Journal Articles

Observation of ionic Coulomb blockade in nanopores

J. Feng; K. Liu; M. Graf; D. Dumcenco; A. Kis et al. 

Nature Materials. 2016. Vol. 15, p. 850 – 855. DOI : 10.1038/nmat4607.

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THz time-domain spectroscopy and IR spectroscopy on MoS2

D. Arcos; D. Gabriel; D. Dumcenco; A. Kis; N. Ferrer-Anglada 

Physica Status Solidi B-Basic Solid State Physics. 2016. Vol. 253, num. 12, p. 2499 – 2504. DOI : 10.1002/pssb.201600281.

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Valley polarization by spin injection in a light-emitting van der Waals heterojunction

O. L. Sanchez; D. Ovchinnikov; S. Misra; A. Allain; A. Kis 

Nano Letters. 2016. Vol. 16, num. 9, p. 5792 – 5797. DOI : 10.1021/acs.nanolett.6b02527.

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A robust molecular probe for Ångstrom-scale analytics in liquids

P. Nirmalraj; D. Thompson; C. Dimitrakopoulos; B. Gotsmann; D. Dumcenco et al. 

Nature Communications. 2016. Vol. 7, p. 12403. DOI : 10.1038/ncomms12403.

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Vacuum ultraviolet excitation luminescence spectroscopy of few-layered MoS2

V. Pankratov; J. Hoszowska; -C. Dousse; M. Huttula; A. Kis et al. 

Journal Of Physics-Condensed Matter. 2016. Vol. 28, num. 1, p. 015301. DOI : 10.1088/0953-8984/28/1/015301.

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Magnetoexcitons in large area CVD-grown monolayer MoS2 and MoSe2 on sapphire

A. A. Mitioglu; K. Galkowski; A. Surrente; L. Klopotowski; D. Dumcenco et al. 

Physical Review B. 2016. Vol. 93, num. 16, p. 165412. DOI : 10.1103/PhysRevB.93.165412.

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Free-standing electronic character of monolayer

H. Kim; D. Dumcenco; M. Frégnaux; A. Benayad; M-W. Chen et al. 

Physical Review B. 2016. Vol. 94, num. 8, p. 081401. DOI : 10.1103/PhysRevB.94.081401.

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Disorder engineering and conductivity dome in ReS2 with electrolyte gating

D. Ovchinnikov; F. Gargiulo; A. Allain; D. J. Pasquier; D. Dumcenco et al. 

Nature Communications. 2016. Vol. 7, p. 12391. DOI : 10.1038/ncomms12391.

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Single-layer MoS2 nanopores as nanopower generators

J. Feng; M. Graf; K. Liu; D. Ovchinnikov; D. Dumcenco et al. 

Nature. 2016. Vol. 536, p. 197 – 200. DOI : 10.1038/nature18593.

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High Responsivity, Large-Area Graphene/MoS2 flexible photodetectors

D. De Fazio; I. Goykhman; D. Yoon; M. Bruna; A. Eiden et al. 

ACS Nano. 2016. Vol. 10, num. 9, p. 8252 – 8262. DOI : 10.1021/acsnano.6b05109.

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2015

Journal Articles

Optically active quantum dots in monolayer WSe2

A. Srivastava; M. Sidler; A. V. Allain; D. S. Lembke; A. Kis et al. 

Nature Nanotechnology. 2015. Vol. 10, p. 491 – 496. DOI : 10.1038/nnano.2015.60.

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Electrochemical Reaction in Single Layer MoS2: nanopores opened atom by atom

J. Feng; K. Liu; M. Graf; M. Lihter; R. D. Bulushev et al. 

Nano Letters. 2015.  p. 150504094212005. DOI : 10.1021/acs.nanolett.5b00768.

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Thickness-dependent mobility in two-dimensional MoS2

D. Lembke; A. Allain; A. Kis 

Nanoscale. 2015. Vol. 7, num. 14, p. 6255 – 6260. DOI : 10.1039/C4NR06331G.

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Identification of single nucleotides in MoS2 nanopores

J. Feng; K. Liu; R. D. Bulushev; S. Khlybov; D. Dumcenco et al. 

Nature Nanotechnology. 2015. Vol. 10, num. 12, p. 1070 – 1076. DOI : 10.1038/nnano.2015.219.

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Single-Layer MoS2 Electronics

D. Lembke; S. Bertolazzi; A. Kis 

Accounts of Chemical Research. 2015. Vol. 48, num. 1, p. 100 – 110. DOI : 10.1021/ar500274q.

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Electromechanical oscillations in bilayer graphene

M. M. Benameur; F. Gargiulo; S. Manzeli; G. Autès; M. Tosun et al. 

Nature Communications. 2015. Vol. 6, p. 8582. DOI : 10.1038/ncomms9582.

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Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

S. Manzeli; A. Allain; A. Ghadimi; A. Kis 

Nano Letters. 2015.  p. 150720132701006. DOI : 10.1021/acs.nanolett.5b01689.

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Electronic properties of transition-metal dichalcogenides

A. Kuc; T. Heine; A. Kis 

MRS Bulletin. 2015. Vol. 40, num. 07, p. 577 – 584. DOI : 10.1557/mrs.2015.143.

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Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography

F. M. Espinosa; Y. K. Ryu; K. Marinov; D. Dumcenco; A. Kis et al. 

Applied Physics Letters. 2015. Vol. 106, num. 10, p. 103503. DOI : 10.1063/1.4914349.

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Valley Zeeman effect in elementary optical excitations of monolayer WSe2

A. Srivastava; M. Sidler; A. V. Allain; D. S. Lembke; A. Kis et al. 

Nature Physics. 2015. Vol. 11, p. 141 – 147. DOI : 10.1038/nphys3203.

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Numerical correction of anti-symmetric aberrations in single HRTEM images of weakly scattering 2D-objects

O. Lehtinen; D. Geiger; Z. Lee; M. B. Whitwick; M-W. Chen et al. 

Ultramicroscopy. 2015. Vol. 151, p. 130 – 135. DOI : 10.1016/j.ultramic.2014.09.010.

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Large-area MoS2 grown using H2S as the sulphur source

D. Dumcenco; D. Ovchinnikov; O. Lopez Sanchez; P. Gillet; D. T. L. Alexander et al. 

2D Materials. 2015. Vol. 2, num. 4, p. 044005. DOI : 10.1088/2053-1583/2/4/044005.

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Large-Area Epitaxial Monolayer MoS2

D. Dumcenco; D. Ovchinnikov; K. Marinov; P. Lazić; M. Gibertini et al. 

ACS Nano. 2015. Vol. 9, p. 4611 – 4620. DOI : 10.1021/acsnano.5b01281.

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Atomic Scale Microstructure and Properties of Se-Deficient Two-Dimensional MoSe2

O. Lehtinen; H-P. Komsa; A. Pulkin; M. B. Whitwick; M-W. Chen et al. 

ACS Nano. 2015. Vol. 9, num. 3, p. 3274 – 3283. DOI : 10.1021/acsnano.5b00410.

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2014

Journal Articles

Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

R. Yan; J. R. Simpson; S. Bertolazzi; J. Brivio; M. Watson et al. 

ACS Nano. 2014. Vol. 8, num. 1, p. 986 – 993. DOI : 10.1021/nn405826k.

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MoS2 Transistors Operating at Gigahertz Frequencies

D. Krasnozhon; D. Lembke; C. Nyffeler; Y. Leblebici; A. Kis 

Nano Letters. 2014. Vol. 14, num. 10, p. 5905 – 5911. DOI : 10.1021/nl5028638.

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Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

W. Cao; J. Kang; S. Bertolazzi; A. Kis; K. Banerjee 

IEEE Transactions on Electron Devices. 2014. Vol. 61, num. 10, p. 3456 – 3464. DOI : 10.1109/TED.2014.2350483.

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Electron and Hole Mobilities in Single-Layer WSe2

A. Allain; A. Kis 

ACS Nano. 2014.  p. doi:10.1021/nn5021538. DOI : 10.1021/nn5021538.

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Electrical Transport Properties of Single-Layer WS2

D. Ovchinnikov; A. Allain; Y-S. Huang; D. Dumcenco; A. Kis 

ACS Nano. 2014.  p. 140728153134003. DOI : 10.1021/nn502362b.

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Light Generation and Harvesting in a van der Waals Heterostructure

O. Lopez-Sanchez; E. Alarcon Llado; V. Koman; A. Fontcuberta I. Morral; A. Radenovic et al. 

ACS Nano. 2014. Vol. 8, p. 3042 – 3048. DOI : 10.1021/nn500480u.

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Atomically Thin Molybdenum Disulfide Nanopores with High Sensitivity for DNA Translocation

K. Liu; J. Feng; A. Kis; A. Radenovic 

ACS Nano. 2014. Vol. 8, p. 2504 – 2511. DOI : 10.1021/nn406102h.

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2013

Journal Articles

Mobility engineering and a metal–insulator transition in monolayer MoS2

B. Radisavljevic; A. Kis 

Nature Materials. 2013. Vol. 12, p. 815 – 820. DOI : 10.1038/nmat3687.

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Detecting the translocation of DNA through a nanopore using graphene nanoribbons

F. Traversi; C. Raillon; S. M. Benameur; K. Liu; S. Khlybov et al. 

Nature Nanotechnology. 2013. Vol. 8, num. 12, p. 939 – 945. DOI : 10.1038/Nnano.2013.240.

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Ultrasensitive photodetectors based on monolayer MoS2

O. Lopez-Sanchez; D. Lembke; M. Kayci; A. Radenovic; A. Kis 

Nature Nanotechnology. 2013. Vol. 8, num. 7, p. 497 – 501. DOI : 10.1038/nnano.2013.100.

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Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

S. Bertolazzi; D. Krasnozhon; A. Kis 

ACS Nano. 2013. Vol. 7, p. 3246 – 3252. DOI : 10.1021/nn3059136.

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Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2

H. Shi; R. Yan; S. Bertolazzi; J. Brivio; B. Gao et al. 

ACS Nano. 2013. Vol. 7, num. 2, p. 1072 – 1080. DOI : 10.1021/nn303973r.

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2012

Journal Articles

Small-signal amplifier based on single-layer MoS2

B. Radisavljevic; M. B. Whitwick; A. Kis 

Applied Physics Letters. 2012. Vol. 101, num. 4, p. 043103. DOI : 10.1063/1.4738986.

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Ultrathin MoS2 membranes and their characterization through HRTEM and electron diffraction studies

J. Brivio; A. Kis; D. Alexander 

Microscopy and Microanalysis. 2012. Vol. 18, num. S2, p. 1582 – 1583. DOI : 10.1017/S1431927612009762.

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Long-term retention in organic ferroelectric-graphene memories

S. Raghavan; I. Stolichnov; N. Setter; J-S. Heron; M. Tosun et al. 

Applied Physics Letters. 2012. Vol. 100, num. 2, p. 023507. DOI : 10.1063/1.3676055.

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Breakdown of High-Performance Monolayer MoS2

D. Lembke; A. Kis 

ACS Nano. 2012.  p. 121005131244003. DOI : 10.1021/nn303772b.

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2011

Journal Articles

Visibility of dichalcogenide nanolayers

M. M. Benameur; B. Radisavljevic; J. S. Héron; S. Sahoo; H. Berger et al. 

Nanotechnology. 2011. Vol. 22, num. 12, p. 125706. DOI : 10.1088/0957-4484/22/12/125706.

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Single-layer MoS2 transistors

B. Radisavljevic; A. Radenovic; J. Brivio; V. Giacometti; A. Kis 

Nature Nanotechnology. 2011. Vol. 6, p. 147. DOI : 10.1038/nnano.2010.279.

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Ripples and Layers in Ultrathin MoS2 Membranes

J. Brivio; D. Alexander; A. Kis 

Nano Letters. 2011. Vol. 11, p. 5148 – 5153. DOI : 10.1021/nl2022288.

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Stretching and Breaking of Ultrathin MoS2

S. Bertolazzi; J. Brivio; A. Kis 

ACS Nano. 2011. Vol. 5, num. 12, p. 9703 – 9709. DOI : 10.1021/nn203879f.

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Integrated Circuits and Logic Operations Based on Single-Layer MoS2

B. Radisavljevic; M. B. Whitwick; A. Kis 

ACS Nano. 2011. Vol. 5, p. 9934 – 9938. DOI : 10.1021/nn203715c.

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2010

Journal Articles

ssDNA Binding Reveals the Atomic Structure of Graphene

B. S. Husale; S. Sahoo; A. Radenovic; F. Traversi; P. Annibale et al. 

Langmuir. 2010. Vol. 26, num. 23, p. 18078 – 18082. DOI : 10.1021/la102518t.

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Beta amyloid and hyperphosphorylated tau deposits in the pancreas in type 2 diabetes

J. Miklossy; H. Qing; A. Radenovic; A. Kis; B. Villeno et al. 

Neurobiology of Aging. 2010. Vol. 31, num. 9, p. 1503 – 1515. DOI : 10.1016/j.neurobiolaging.2008.08.019.

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2009

Journal Articles

Mechanical and electronic properties of vanadium oxide nanotubes

B. Sipos; M. Duchamp; A. Magrez; L. Forró; N. BarišIć et al. 

Journal of Applied Physics. 2009. Vol. 105, num. 7, p. 074317. DOI : 10.1063/1.3103280.

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2008

Journal Articles

Nanomechanics of carbon nanotubes

A. Kis; A. Zettl 

Philosophical Transactions Of The Royal Society A-Mathematical Physical And Engineering Sciences. 2008. Vol. 366, p. 1591 – 1611. DOI : 10.1098/rsta.2007.2174.

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Temperature-Dependent Elasticity of Microtubules

A. Kis; S. Kasas; A. J. Kulik; S. Catsicas; L. Forró 

Langmuir. 2008. Vol. 24, num. 12, p. 6176 – 6181. DOI : 10.1021/la800438q.

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2007

Journal Articles

Buckling and kinking force measurements on individual multiwalled carbon nanotubes

K. Jensen; W. Mickelson; A. Kis; A. Zettl 

Physical Review B. 2007. Vol. 76, num. 19, p. 195436. DOI : 10.1103/PhysRevB.76.195436.

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A cell nanoinjector based on carbon nanotubes

X. Chen; A. Kis; A. Zettl; C. R. Bertozzi 

Proceedings of the National Academy of Sciences. 2007. Vol. 104, num. 20, p. 8218 – 8222. DOI : 10.1073/pnas.0700567104.

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Nanomechanical investigation of $Mo_6S_{9-x}I_x$ nanowire bundles

A. Kis; G. Csanyi; D. Vrbanic; A. Mrzel; D. Mihailovic et al. 

Small. 2007. Vol. 3, num. 9, p. 1544 – 1548. DOI : 10.1002/smll.200700164.

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2006

Journal Articles

Shrinking a Carbon Nanotube

T. D. Yuzvinsky; W. Mickelson; S. Aloni; G. E. Begtrup; A. Kis et al. 

Nano Letters. 2006. Vol. 6, num. 12, p. 2718 – 2722. DOI : 10.1021/nl061671j.

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Interlayer Forces and Ultralow Sliding Friction in Multiwalled Carbon Nanotubes

A. Kis; K. Jensen; S. Aloni; W. Mickelson; A. Zettl 

Physical Review Letters. 2006. Vol. 97, num. 2, p. 025501. DOI : 10.1103/PhysRevLett.97.025501.

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Beta-amyloid deposition and Alzheimer’s type changes induced by Borrelia spirochetes

J. Miklossy; A. Kis; A. Radenovic; L. Miller; L. Forro et al. 

Neurobiology of Aging. 2006. Vol. 27, num. 2, p. 228 – 236. DOI : 10.1016/j.neurobiolaging.2005.01.018.

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2005

Journal Articles

Elastic modulus of multi-walled carbon nanotubes produced by catalytic chemical vapour deposition

B. Lukic; J. W. Seo; E. Couteau; K. Lee; S. Gradecak et al. 

Applied Physics a-Materials Science & Processing. 2005. Vol. 80, num. 4, p. 695 – 700. DOI : 10.1007/s00339-004-3100-5.

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Catalytically grown carbon nanotubes of small diameter have a high Young’s modulus

B. Lukic; J. W. Seo; R. R. Bacsa; S. Delpeux; F. Beguin et al. 

Nano Letters. 2005. Vol. 5, num. 10, p. 2074 – 2077. DOI : 10.1021/nl051034d.

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Imaging the life story of nanotube devices

T. D. Yuzvinsky; W. Mickelson; S. Aloni; S. L. Konsek; A. M. Fennimore et al. 

Applied Physics Letters. 2005. Vol. 87, num. 8, p. 083103. DOI : 10.1063/1.2012529.

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Controlled placement of highly aligned carbon nanotubes for the manufacture of arrays of nanoscale torsional actuators

T. D. Yuzvinsky; A. M. Fennimore; A. Kis; A. Zettl 

Nanotechnology. 2005. Vol. 17, num. 2, p. 434 – 438. DOI : 10.1088/0957-4484/17/2/015.

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2004

Journal Articles

Oscillation modes of microtubules

S. Kasas; C. Cibert; A. Kis; P. De Los Rios; B. M. Riederer et al. 

Biology of the Cell. 2004. Vol. 96, num. 9, p. 697 – 700. DOI : 10.1016/j.biolcel.2004.09.002.

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Mechanical Properties of Microtubules Explored Using the Finite Elements Method

S. Kasas; A. Kis; B. M. Riederer; L. Forró; G. Dietler et al. 

ChemPhysChem. 2004. Vol. 5, num. 2, p. 252 – 257. DOI : 10.1002/cphc.200300799.

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Reinforcement of single-walled carbon nanotube bundles by intertube bridging

A. Kis; G. Csanyi; J. P. Salvetat; T. N. Lee; E. Couteau et al. 

Nature Materials. 2004. Vol. 3, num. 3, p. 153 – 157. DOI : 10.1038/nmat1076.

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2003

Journal Articles

Shear and Young’s Moduli of MoS2 Nanotube Ropes

A. Kis; D. Mihailovic; M. Remskar; A. Mrzel; A. Jesih et al. 

Advanced Materials. 2003. Vol. 15, num. 9, p. 733 – 736. DOI : 10.1002/adma.200304549.

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2002

Journal Articles

Specific heats of the charge density wave compounds o-TaS and (TaSe ) I

D. Starešinić; A. Kiš; K. Biljaković; B. Emerling; J. W. Brill et al. 

The European Physical Journal B. 2002. Vol. 29, num. 1, p. 71 – 77. DOI : 10.1140/epjb/e2002-00263-1.

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Nanomechanics of Microtubules

A. Kis; S. Kasas; B. Babić; A. Kulik; W. Benoît et al. 

Physical Review Letters. 2002. Vol. 89, num. 24, p. 248101. DOI : 10.1103/PhysRevLett.89.248101.

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