Electron-beam based nanoscale quantum controls

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

K. Ji; M. Schnedler; Q. Lan; F. Zheng; Y. Wang et al. 

Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry

M. Elhajhasan; W. Seemann; K. Dudde; D. Vaske; G. Callsen et al. 

Dynamical nuclear polarization for dissipation-induced entanglement in NV centers

S. Khandelwal; S. Kumar; N. Palazzo; G. Haack; M. S. Chipaux 

Optically detected magnetic resonance with an open source platform

H. Babashah; H. Shirzad; E. Losero; V. Goblot; C. Galland et al. 

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

P. Lottigier; D. M. Di Paola; D. T. L. Alexander; T. F. K. Weatherley; P. S. d. S. M. Modrono et al. 

Optimizing Data Processing for Nanodiamond Based Relaxometry

T. A. Vedelaar; T. H. Hamoh; F. P. P. Martinez; M. Chipaux; R. Schirhagl 

Fast, Broad-Band Magnetic Resonance Spectroscopy with Diamond Widefield Relaxometry

C. Mignon; A. R. O. Moreno; H. Shirzad; S. K. Padamati; V. G. Damle et al. 

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells

A. Delphan; M. N. Makhonin; T. Isoniemi; P. M. Walker; M. S. Skolnick et al. 

Detecting the metabolism of individual yeast mutant strain cells when aged, stressed or treated with antioxidants with diamond magnetometry

A. Morita; A. C. Nusantara; A. Myzk; F. P. P. Martinez; T. Hamoh et al. 

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

N. Roccato; F. Piva; C. De Santi; M. Buffolo; C. Haller et al. 

Diamond-Based Nanoscale Quantum Relaxometry for Sensing Free Radical Production in Cells

A. Sigaeva; H. Shirzad; F. P. Martinez; A. C. Nusantara; N. Mougios et al. 

Single-Particle Tracking and Trajectory Analysis of Fluorescent Nanodiamonds in Cell-Free Environment and Live Cells

A. Sigaeva; A. Hochstetter; S. Bouyim; M. Chipaux; M. Stejfova et al. 

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

J. Stachurski; S. Tamariz; G. Callsen; R. Butte; N. Grandjean 

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

M. Buffolo; N. Roccato; F. Piva; C. De Santi; R. Brescancin et al. 

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

N. Roccato; F. Piva; C. De Santi; R. Brescancin; K. Mukherjee et al. 

Quantum Sensing of Free Radicals in Primary Human Dendritic Cells

L. Nie; A. C. Nusantara; V. G. Damle; M. V. Baranov; M. Chipaux et al. 

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

N. Roccato; F. Piva; C. De Santi; M. Buffolo; C. Haller et al. 

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

N. Roccato; F. Piva; C. De Santi; R. Brescancin; K. Mukherjee et al. 

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

T. F. K. Weatherley; W. Liu; V. Osokin; D. T. L. Alexander; R. A. Taylor et al. 

Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature

D. M. Di Paola; P. M. Walker; R. P. A. Emmanuele; A. V. Yulin; J. Ciers et al. 

Quantum monitoring of cellular metabolic activities in single mitochondria

L. Nie; A. C. Nusantara; V. G. Damle; R. Sharmin; E. P. P. Evans et al. 

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

P. Sohi; Carlin; M. D. Rossell; R. Erni; N. Grandjean et al. 

Smooth GaN membranes by polarization-assisted electrochemical etching

J. Ciers; M. A. Bergmann; F. Hjort; Carlin; N. Grandjean et al. 

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

M. Hrytsaienko; M. Gallart; M. Ziegler; O. Cregut; S. Tamariz et al. 

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

F. Piva; C. De Santi; A. Caria; C. Haller; J. F. Carlin et al. 

Evidence of the entanglement constraint on wave-particle duality using the IBM Q quantum computer

N. Schwaller; M-A. Dupertuis; C. Javerzac-Galy 

Interaction of Confined Polaritons in Microcavity Structures

Nanodiamond Relaxometry-Based Detection of Free-Radical Species When Produced in Chemical Reactions in Biologically Relevant Conditions

F. P. Martinez; A. C. Nusantara; M. Chipaux; S. K. Padamati; R. Schirhagl 

Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces

Y. Wang; M. Schnedler; Q. Lan; F. Zheng; L. Freter et al. 

Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

A. Y. Polyakov; C. Haller; R. Butte; N. B. Smirnov; L. A. Alexanyan et al. 

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

L. Freter; Y. Wang; M. Schnedler; J. -F. Carlin; R. Butte et al. 

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

A. Y. Polyakov; C. Haller; R. Butte; N. B. Smirnov; L. A. Alexanyan et al. 

Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

J. Ciers; D. D. Solnyshkov; G. Callsen; Y. Kuang; Carlin et al. 

Combined synchrotron x-ray diffraction and NV diamond magnetic microscopy measurements at high pressure

L. Toraille; A. Hilberer; T. Plisson; M. Lesik; M. Chipaux et al. 

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

S. Tamariz; G. Callsen; J. Stachurski; K. Shojiki; R. Butte et al. 

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

W. Liu; C. Haller; Y. Chen; T. Weatherley; J. -F. Carlin et al. 

III-nitride photonic cavities

R. Butte; N. Grandjean 

Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment

E. Quesnel; A. Lagrange; M. Vigier; M. Consonni; M. Tournaire et al. 

Efficient second harmonic generation in a doubly resonant photonic crystal cavity based on a bound state in the continuum

J. Wang; M. Clementi; A. Barone; M. Minicoy; J-F. Carlin et al. 

Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum

J. Wang; M. Clementi; M. Minkov; A. Barone; J-F. Carlin et al. 

Localized Photon Lasing in a Polaritonic Lattice Landscape

M. Navadeh-Toupchi; F. Jabeen; D. Y. Oberli; M. T. Portella-Oberli 

Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes

H. Zhang; C-W. Shih; D. Martin; A. Caut; J-F. Carlin et al. 

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

A. Y. Polyakov; C. Haller; N. B. Smirnov; A. S. Shiko; I. V. Shchemerov et al. 

Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN

G. Callsen; R. Butte; N. Grandjean 

Short cavity InGaN-based laser diodes with cavity length below 300 mu m

H. Zhang; C-W. Shih; D. Martin; A. Caut; J-F. Carlin et al. 

Efficient Quantum Algorithms for GHZ and W States, and Implementation on the IBM Quantum Computer

D. Cruz; R. Fournier; F. Gremion; A. Jeannerot; K. Komagata et al. 

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

C. Haller; J-F. Carlin; M. Mosca; M. D. Rossell; R. Erni et al. 

Density control of GaN quantum dots on AlN single crystal

S. Tamariz; G. Callsen; N. Grandjean 

Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBE

G. Callsen; S. Tamariz; N. Grandjean 

Probing alloy formation using different excitonic species: The particular case of InGaN

G. Callsen; R. Butte; N. Grandjean 

Anderson localisation in steady states of microcavity polaritons

T. J. Sturges; M. D. Anderson; A. Buraczewski; M. Navadeh-Toupchi; A. F. Adiyatullin et al. 

Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods

W. Liu; G. Rossbach; A. Avramescu; T. Schimpke; H. -J. Lugauer et al. 

Gas pressure measurement device

I. Rousseau; P. Sohi 

Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes

Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

GaN Quantum Dots for Room Temperature Excitonic Physics

Electroluminescence of Single InGaN/GaN Micropyramids

A. V. Babichev; D. V. Denisov; P. Lavenus; G. Jacopin; M. Tchernycheva et al. 

Polaritonic Cross Feshbach Resonance

M. Navadeh-Toupchi; N. Takemura; M. D. Anderson; D. Y. Oberli; M. T. Portella-Oberli 

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

P. Sohi; M. Mosca; Y. Chen; J-F. Carlin; N. Grandjean 

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

C. Haller; J. -F. Carlin; G. Jacopin; W. Liu; D. Martin et al. 

Insights about the Absence of Rb Cation from the 3D Perovskite Lattice: Effect on the Structural, Morphological, and Photophysical Properties and Photovoltaic Performance

R. Uchida; S. Binet; N. Arora; G. Jacopin; M. H. Alotaibi et al. 

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

R. Butte; L. Lahourcade; T. Uzdavinys; G. Callsen; M. Mensi et al. 

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

I. Rousseau; G. Callsen; G. Jacopin; J. Carlin; R. Butte et al. 

Impact of surface morphology on the properties of light emission in InGaN epilayers

T. Uzdavinys; S. Marcinkevicius; M. Mensi; L. Lahourcade; J. Carlin et al. 

Excited states of neutral donor bound excitons in GaN

G. Callsen; T. Kure; M. Wagner; R. Butte; N. Grandjean 

Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography

E. Di Russo; F. Moyon; N. Gogneau; L. Largeau; E. Giraud et al. 

Alloy disorder limited mobility of InGaN two-dimensional electron gas

P. Sohi; J. Carlin; N. Grandjean 

A quantum optical study of thresholdless lasing features in high-beta nitride nanobeam cavities

S. Jagsch; N. Trivino; F. Lohof; G. Callsen; S. Kalinowski et al. 

Light-Matter Interaction in III-Nitride Waveguides: Propagating Polaritons and Optical Gain

III-Nitride Semiconductor Photonic Nanocavities on Silicon

Impact of Mode-Hopping Noise on InGaN Edge Emitting Laser Relative Intensity Noise Properties

A. Congar; K. Hussain; C. Pareige; R. Butte; N. Grandjean et al. 

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

C. Haller; J. -F. Carlin; G. Jacopin; D. Martin; R. Butte et al. 

AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range

S. Tamariz; D. Martin; N. Grandjean 

Multilayer porous structures on GaN for the fabrication of Bragg reflectors

T. Braniste; E. Monaico; D. Martin; J-F. Carlin; V. Popa et al. 

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

P. Sohi; D. Martin; N. Grandjean 

Determining the nature of excitonic dephasing in high-quality GaN/AlGaN quantum wells through time-resolved and spectrally resolved four-wave mixing spectroscopy

M. Gallart; M. Ziegler; O. Cregut; E. Feltin; J. -F. Carlin et al. 

Method for labeling products with a transparent photoluminescent label, and transparent photoluminescent label

N. Hefyene; N. Grandjean 

Thin-Wall GaN/InAlN Multiple Quantum Well Tubes

C. Durand; J-F. Carlin; C. Bougerol; B. Gayral; D. Salomon et al. 

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

M. Shahmohammadi; W. Liu; G. Rossbach; L. Lahourcade; A. Dussaigne et al. 

Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range

I. Rousseau; I. Sanchez-Arribas; K. Shojiki; J-F. Carlin; R. Butte et al. 

Propagating Polaritons in III-Nitride Slab Waveguides

J. Ciers; J. G. Roch; J. -F. Carlin; G. Jacopin; R. Butte et al. 

Light-emitting diode technology and applications: introduction

M. Krames; N. Grandjean 

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

M. S. Mohamed; A. Simbula; J-F. Carlin; M. Minkov; D. Gerace et al. 

Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

T. Braniste; J. Ciers; E. Monaico; D. Martin; J. -F. Carlin et al. 

Fermi-level pinning and intrinsic surface states of Al1-xInxNd(10(1)over-bar0) surfaces

V. Portz; M. Schnedler; L. Lymperakis; J. Neugebauer; H. Eisele et al. 

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

H. Okumura; D. Martin; N. Grandjean 

Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon

S. T. Jagsch; N. V. Trivino; G. Callsen; S. Kalinowski; I. M. Rousseau et al. 

Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

L. Lugani; M. A. Py; J. -F. Carlin; N. Grandjean 

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

W. Liu; R. Butte; A. Dussaigne; N. Grandjean; B. Deveaud et al. 

Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures

G. R. Mutta; S. Carapezi; A. Vilalta-Clemente; N. A. K. Kauffman; N. Grandjean et al. 

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

E. C. Young; N. Grandjean; T. E. Mates; J. S. Speck 

Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures

V. Portz; M. Schnedler; M. Duchamp; F. -M. Hsiao; H. Eisele et al. 

Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells

F. Fedichkin; T. Guillet; P. Valvin; B. Jouault; C. Brimont et al. 

Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

W. Liu; J. -F. Carlin; N. Grandjean; B. Deveaud; G. Jacopin