2011

Conference Papers: J. Cao, W. A. Vitale, A. M. Ionescu, “Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits”, IEEE MEMS 2012, Paris, France, Jan. 29-Feb. 2, 2012. M. Najmzadeh, D. Bouvet, W. Grabinski, A. M. Ionescu, “Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling”, IEEE ISDRS 2011 (biennial), University of Maryland, College Park, MD, USA, 7-9 Dec. 2011. A. Biswas, W. Grabinski, C. Le Royer, S. S. Dan, A. M. Ionescu, “TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model”, MNE 2011, 19-23 September, Berlin, Germany. E. Buitrago, M. Fernandez-Bolaños, A. M. Ionescu, “Vertically Stacked Silicon Nanowires/Fin-Type Structures for Bio-Sensing Applications”, MNE 2011, 19-23 September, Berlin, Germany. J. Cao, A. M. Ionescu, “An Improved Precise Positioning Method for Self-Assembly of Lateral-Gate Carbon Nanotube Field-Effect-Transistors”, MNE 2011, 19-23 September, Berlin, Germany. H. Guerin, D. Tsamados, A. M. Ionescu, H. Le Poche, J. Dijon, “Horizontally and on-site grown Carbon Nanotube Membrane for Sensitive and Selective Gas Sensing”, MNE 2011, 19-23 September, Berlin, Germany. S. T. Bartsch, D. Grogg, A. Lovera, D. Tsamados, A. M. Ionescu, “Very high frequency double-ended tuning fork nanomechanical FinFET resonator”, Digest of Technical Papers of the 16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2011, Beijing, China, June 5-9th 2011. J. Cao, A. M. Ionescu, “Self-Aligned Double-Gate Suspended-Body Carbon Nanotube Field-Effect transistors For RF Applications”, Transducers 2011, Beijing, China, June 5-9th 2011. L. De Michielis, L. Lattanzio, P. Palestri, L. Selmi, A. M. Ionescu, “Tunnel-FET Architecture with Improved Performance due to Enhanced Gate Modulation of the Tunneling Barrier”, DRC 2011, Santa Barbara, California, USA, 20-22 June 2011. M. Najmzadeh, D. Bouvet, W. Grabinski, A. M. Ionescu, “Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs”, DRC 2011, Santa Barbara, California, USA, 20-22 June 2011. J. Cao, A. M. Ionescu, “Lateral Gate Suspended-Body Carbon Nanotube Field-Effect-Transistors with Sub-100nm Air Gap by Precise Positioning Method”, DRC 2011, Santa Barbara, California, USA, 20-22 June 2011. L. Lattanzio, L. De Michielis, A. M. Ionescu, “Electron-Hole Bilayer Tunnel FET for Steep Subthreshold Swing and Improved ON Current”, ESSDERC 2011, 12-16 September 2011, Helsinki, Finland. J. Cao, A. M. Ionescu, “Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-Transistors”, ESSDERC 2011, 12-16 September 2011, Helsinki, Finland. M. Najmzadeh, D. Bouvet, W. Grabinski, A. M. Ionescu, “Accumulation-Mode GAA Si NW nFET with Sub-5 nm cross-section and high uniaxial tensile strain”, ESSDERC 2011, 12-16 September 2011, Helsinki, Finland. J. Cao, A. M. Ionescu, “Self-Assembly of Doubly-Clamped/Cantilevered Carbon Nanotube Arrays by a Precise Positioning Method”, NT 2011, Cambridge, UK, July 11-16, 2011. J. Cao, A. M. Ionescu, “Self-Aligned Back-Gated Suspended Body Single-Walled Carbon Nanotube Field-Effect-Transistors Fabricated by High-Precision Positioning Method”, VLSI-TSA 2011, Hsinchu, Taiwan, April 25-27, 2011. L. De Michielis, M. Iellina, P. Palestri, A. M. Ionescu, L. Selmi, “Tunneling path impact on semi-classical numerical simulations of TFET devices”, ULIS 2011, Cork, Ireland, 14-16th March 2011. Journal Papers: S. T. Bartsch, A. Lovera, D. Grogg and A. M. Ionescu, “Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption”, in ACS Nano, , doi:10.1021/nn203517w, 2011. J. Cao , C. Nyffeler, K. Lister, A. M. Ionescu, “Resist-Assisted Assembly of Single-Walled Carbon Nanotube Devices with Nanoscale Precision”, Carbon, DOI:10.1016/j.carbon.2011.12.006, Available online 8 December 2011. A. M. Ionescu, H. Riel, “Tunnel field-effect transistors as energy-efficient electronic switches”, Nature, vol. 479, iss. 7373, pp. 329-337, doi:10.1038/nature10679, November 2011. S. S. Dan, A. Biswas, W. Grabinski, C. Le Royer, A. M. Ionescu, “A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction”, IEEE Electron Device Letters, vol. 33, iss. 2, DOI:10.1109/LED.2011.2174027, available online January 2012. L. De Michielis, M. Iellina, P. Palestri, A. M. Ionescu, L. Selmi, “Tunneling path impact on semi-classical numerical simulations of TFET devices”, accepted for publication in Solid State Electronics. L. Lattanzio, A. Biswas, L. De Michielis, A. M. Ionescu, “Abrupt Switch based on Internally Combined Band-To-Band and Barrier Tunneling Mechanisms”, special issue of Solid State Electronics, 65-66 (2011) 234-239, November 2011. G. A. Salvatore, L. Lattanzio, D. Bouvet, A. M. Ionescu, “Modeling the temperature dependence of Fe-FET static characteristics based on Landau’s theory”, IEEE Transactions on Electron Devices, vol. 58, no. 9, pp. 3162-3169, September 2011. J. Perruisseau-Carrier, F. Bongard, M. Fernandez-Bolaños, A. M. Ionescu, “A Microfabricated 1-D Metamaterial Unit Cell Matched from DC to Millimeter-waves”, IEEE Microwave and Wireless Components Letters, vol. 21 (9), pp. 456-458, September 2011. M. Fernandez-Bolaños, P. Nicole, A. M. Ionescu, “RF-MEMS switches with AlN dielectric and their applications”, International Journal of Microwave and Wireless Technologies, DOI: 10.1017/S175907871100064X, June 2011. L. Lattanzio, A. Biswas, L. De Michielis, A. M. Ionescu, “A tunneling Field-Effect Transistor exploiting internally combined Band-to-Band and barrier tunneling mechanisms”, Applied Physics Letters, vol. 98, iss. 12, 123504, March 2011. N. V. Cvetkovic, K. Sidler, V. Savu, J. Brugger, D. Tsamados, A. M. Ionescu, “Three-level stencil alignment fabrication of a high-k gate stack organic thin film transistor”, Corrected Proof, available online 10. January 2011, Microelectronic Engineering. S. Rigante, L. Lattanzio, A. M. Ionescu, “FinFET for high sensitivity ion and biological sensing applications”, Microelectronic Engineering, vol. 88, no. 8, pp. 1864-1866, January 2011. A. Arun, H. Le Poche, T. Idda, D. Acquaviva, M. Fernandez-Bolaños, P. Pantigny, P. Salet and A. M. Ionescu, “Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines”, Nanotechnology, 22, 025203, January 2011. H. Andersson, Al. Rusu, A. Manuilskiy, S. Hallera, S. Ayöz and H.-E. Nilsson, “System of nano-silver inkjet printed memory cards and PC card reader and programmer”, Microelectronics Journal, vol. 42, iss. 1, pp. 21-27, January 2011. Invited presentations: A. M. Ionescu, L. De Michielis, N. Dagtekin, G. Salvatore, J. Cao, A. Rusu, S. Bartsch, “Ultra Low Power: Emerging Devices and their Benefits for Integrated Circuits”, IEDM 2011, Washington, DC, USA, Dec. 5-7, 2011.