2010

Conference Papers: S. T. Bartsch, D. Grogg, A. Lovera, D. Tsamados, S. Ayöz, A. M. Ionescu, “Resonant-Body Fin-FETs with sub-nW power consumption”, IEDM 2010, San Francisco, USA, 06-08 December 2010. Al. Rusu, G. A. Salvatore, D. Jiménez, A. M. Ionescu, “Metal-Ferroelectric-Metal-Oxide-Semiconductor Field Effect Transistor with Sub-60mV/decade Subthreshold Swing and Internal Voltage Amplification”, IEDM 2010 , San Francisco, USA, 06-08 December 2010. A. M. Ionescu, G. Salvatore, L. Lattanzio, “Beyond CMOS devices as enablers of future energy efficient integrated circuits and systems,” 4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium – 218th ECS Meeting, pp. 73-76, October 2010. D. Acquaviva, D. Tsamados, A. M. Ionescu, “CNT Array Capacitive MEM Switches for Reconfigurable Interconnects” ,EuMW 2010, 26. September – 01. October, Paris, France. N. V. Cvetkovic, K. Sidler, V. Savu, J. Brugger, D. Tsamados, A. M. Ionescu, “Three-level stencil alignment fabrication of a High-k Gate Stack Organic Thin Film Transistor”, MNE 2010, 19-22 September, Genoa, Italy. G. A. Salvatore, L. Lattanzio, D. Bouvet, Al. Rusu, A. M. Ionescu, “Temperature sensor based on Ferroelectric FET”, MNE 2010, 19-22 September, Genoa, Italy. M. Hermersdorf, C. Hibert, D. Grogg, A. M. Ionescu, “High Aspect Ratio Sub-Micron Trenches on Silicon-On-Insulator and Bulk Silicon”, MNE 2010, 19-22 September, Genoa, Italy. J. Cao, A. Arun, A. M. Ionescu, “Floating-Potential Self-Assembly of Singe-Walled Carbon Nanotube Transistors by Ac-Dielectrophoresis”, MNE 2010, 19-22 September, Genoa, Italy. S. Rigante, L. Lattanzio, A. M. Ionescu, “FinFET for high sensitivity ion and biological sensing applications”, MNE 2010, 19-22 September, Genoa, Italy. Al. Rusu, G. A. Salvatore, A. M. Ionescu, “Test Structure and Method for the Experimental Investigation of Internal Voltage Amplification and Surface Potential of Ferroelectric MOSFETs”, ESSDERC 2010, 13-17 September 2010, Sevilles, Spain. K. Boucart, W. Riess, A. M. Ionescu, “A Simulation-based Study of Sensitivity to Parameter Fluctuations of Silicon Tunnel FETs”, ESSDERC 2010, 13-17 September 2010, Sevilles, Spain. L. Lattanzio, L. De Michielis, A. Biswas, A. M. Ionescu, “Abrupt Switch based on Internally Combined Band-To-Band and Barrier Tunneling Mechanisms”, ESSDERC 2010, 13-17 September 2010, Sevilles, Spain. A. Lovera, S. Bartsch, D. Grogg, S. Ayöz, R. Kaunisto, A. M. Ionescu, “Active NEM Filters for Communications ApplicationsBased on Vibrating Body Transistors”, ESSDERC 2010, 13-17 September 2010, Sevilles, Spain. G. A. Salvatore, L. Lattanzio, D. Bouvet, A. M. Ionescu, “The Curie Temperature as a Key Design Parameter of Ferroelectric Field Effect Transistors”, ESSDERC 2010, 13-17 September 2010, Sevilles, Spain. D. Acquaviva, A. Arun, S. Esconjauregui, J. Cao, R. Smajda, D. Bouvet, A. Magrez, L. Forro, J. Robertson, A. M. Ionescu, “NEMS Devices Based on Dense Arrays of Carbon Nanotubes for RF Applications”, Diamond 2010, Budapest, Hungary, 5-9 September, 2010. A. Vasylchenko, M. Fernández-Bolaños, S. Brebels, W. De Raedt and G. A. E. Vandenbosch, “Conformal Phased Array for a Miniature Wireless Sensor Node”, ICECom 2010, Dubrovnik, Croatia, September 2010. J. Cao, A. Arun, K. Lister, D. Acquaviva, J. Bhandari, A. M. Ionescu, “Wafer Level Assembly of Single-Walled Carbon Nanotube (SWCNT) Arrays with Precise Positioning”, Nanotech 2010, Anaheim, CA, USA, 21-25 June, 2010. D. Grogg, A. Lovera, A. M. Ionescu, “Nano-Electro-Mechanical Vibrating Body FET Resonator for High Frequency Integrated Oscillators”, DRC 2010, South Bend, IN, USA, 21-23 June, 2010. L. Lattanzio, G. A. Salvatore, A. M. Ionescu, “Non-Hysteretic Ferroelectric Tunnel FET with Improved Conductance at Curie Temperature”, DRC 2010, South Bend, IN, USA, 21-23 June, 2010. D. Acquaviva, A. Arun, S. Esconjauregui, J. Cao, R. Smajda, D. Bouvet, A. Magrez, L. Forro, J. Robertson, A. M. Ionescu, “RF NEM Capacitive Switch Based on Dense Horizontal Arrays of CNTs”, DRC 2010, South Bend, IN, USA, 21-23 June, 2010. P. Nicole, J. Pagazani, M. Feral, P. Lartigues, P. Couderc, W. De Raedt, S. Brebels, E. Beyne, A. M. Ionescu, M. Fernandez-Bolaños, M. Gologanu, C. Bostan, C. Cobianu, “Demonstrations of Wireless Autonomous Sensors for Aeronautical Applications”, SSI 2010, Como, Italy, 23-24 March 2010. L. Lattanzio, L. De Michielis, G. A. Salvatore, D. Bouvet, K. Boucart, A. M. Ionescu, “Ferroelectric Tunnel FET with a SiO2/Al2O3/P(VDF-TrFE) gate stack”, ULIS 2010, Glasgow, Scotland, UK, 17-19 March 2010. A. Arun, M. Goffman, D. Grogg, T. Idda, P. Salet, A. M. Ionescu, “Tunable Electromechanical Resonator based on Carbon Nanotube Arry Suspended Gate Field Effect Transistor”, MEMS 2010, Hong Kong, China, 24-28 January 2010. Journal Papers: A. M. Ionescu, L. Lattanzio, G. A. Salvatore, L. De Michielis, K. Boucart, D. Bouvet, “The Hysteretic Ferroelectric Tunnel FET”,  IEEE Transactions on Electron Devices, vol. 57, iss. 12, pp. 3518-3524, December 2010. M. Fernandez-Bolaños, C. Dehollain, P. Nicole, A. M. Ionescu, “Tunable Band-Stop Filter Based on Single RF MEMS Capacitive Shunt Switch with Meander Arm Inductance”, Solid-State Electronic Journal, vol. 54, iss. 9, pp. 1033-1040, September 2010. H. Andersson , Al. Rusu , A. Manuilskiy, S. Haller, S. Ayoz, H.-E. Nilsson, “System of nano-silver inkjet printed memory cards and PC card reader and programmer”, article in press, Corrected Proof, Available online 18 September 2010, Microelectronics Journal, In Press, 2010. G. A. Salvatore, L. Lattanzio, D. Bouvet, I. Stolichnov, N. Setter, A. M. Ionescu, “Ferroelectric transistors with improved characteristics at high temperature”, Applied Physics Letters, vol. 97, iss. 5, 053503, August 2010. D. Tsamados, N. V. Cvetkovic, K. Sidler, J. Bhandari, V. Savu, J. Brugger, A. M. Ionescu, “Double-gate pentacene thin-film transistor with improved control in subthreshold region”, Solid State Electronics, vol. 54, iss. 9, pp. 1003-1009, September 2010. L. De Michielis, L. Selmi, A. M. Ionescu, “A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section”, Solid State Electronics, vol. 54, iss. 9, pp. 929-934, September 2010. M. Najmzadeh, K. Boucart, W. Riess, A. M. Ionescu, “Asymmetrically strained all-silicon multi-gate n-Tunnel FETs”, Solid State Electronics, vol. 54, iss. 9, pp. 935-941, September 2010. K. Sidler, N. V. Cvetkovic, V. Savu, D. Tsamados, A. M. Ionescu, J. Brugger, “Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography”, Sensors and Actuators A: Physical, 2010. M. Bopp, P. Coronel, C. Hibert, A. M. Ionescu, “3D stacked arrays of fins and nanowires on bulk silicon”, Microelectronic Engineering 2010, vol. 87, iss. 5-8, 1348-1351, May-August 2010. A. Arun, D. Acquaviva, M. Fernández-Bolaños, P. Salet, H. Le-Poche, P. Pantigny, T. Idda, A. M. Ionescu, “Carbon nanotube vertical membranes for electrostatically actuated micro-electro-mechanical devices”, Microelectronic Engineering 2010, vol. 87, iss. 5-8, 1281-1283, May-August 2010. M. Fernandez-Bolanos, A. Vasylchenko, P. Dainesi, S. Brebels, W. De Raedt, G. A. E. Vandenbosch, A. M. Ionescu, “Dipole antenna and distributed MEMS phase shifter fully integrated in a single wafer process for beam steering applications”, Microelectronic Engineering, vol. 87, iss. 5-8, pp. 1290-1293, May-August 2010.   M. Najmzadeh, L. De Michielis, D. Bouvet, P. Dobrosz, S. Olsen, A. M. Ionescu, “Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs”, Microelectronic Engineering, vol. 87, iss. 5-8, pp. 1561-1565, May-August 2010.   G. D. Nessim, D. Acquaviva, M. Seita, K. P. O’Brien, C. V. Thompson, “The Critical Role of the Underlayer Material and Thickness in Growing Vertically Aligned Carbon Nanotubes and Nanofibers on Metallic Substrates by Chemical Vapor Deposition”, Advanced Functional Materials, vol. 20, iss. 8, pp. 1306-1312, April 2010. K. E. Moselund, M. Najmzadeh, P. Dobrosz, S. H. Olsen, D. Bouvet, L. De Michielis, V. Pott, A. M. Ionescu, “The high-mobility bended n-channel silicon nanowire transistor”, IEEE Transactions on Electron Devices, vol. 57, iss. 4, pp. 866-876, April 2010. A. M. Ionescu, “Electronic devices: Nanowire transistors made easy”, Nature Nanotechnology, vol. 5, iss. 3, pp. 178 – 179, March 2010. [link]   Invited presentations:  M. Fernández-Bolaños, A. M. Ionescu, Heterogeneous Integration for Novel Functionality, IEEE 3D System Integration Conference 2010 – 3DIC Munich, November 2010 (keynote)