Recent Publication List

Journal Papers

Atomic-Scale Characterization of 180° Conductive Domain Walls in PbZr0.1Ti0.9O3

P. Koutsogiannis; F. Risch; J. A. Pardo; I. Stolichnov; C. Magén 

ACS applied materials & interfaces. 2024. Vol. 16, num. 48, p. 66341 – 66349. DOI : 10.1021/acsami.4c11565.

Graphene-enhanced ferroelectric domain wall high-output memristor

F. Risch; A. Gilani; S. Kamaei; A. M. Ionescu; I. Stolichnov 

Applied Physics Letters. 2024. Vol. 125, num. 15, p. 152902. DOI : 10.1063/5.0232620.

pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current Approach

Y. C. Sprunger; L. Capua; T. Ernst; S. Barraud; D. Locca et al. 

Biosensors-Basel. 2023. Vol. 13, num. 10, p. 908. DOI : 10.3390/bios13100908.

Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage

S. Kamaei; M. Ghini; A. Gilani; C. Gastaldi; E. Collette et al. 

Ieee Electron Device Letters. 2023. Vol. 44, num. 9, p. 1579 – 1582. DOI : 10.1109/LED.2023.3296945.

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

S. Kamaei; X. Liu; A. Saeidi; Y. Wei; C. Gastaldi et al. 

Nature Electronics. 2023. DOI : 10.1038/s41928-023-01018-7.

Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures

D-S. Park; A. D. Rata; R. T. Dahm; K. Chu; Y. Gan et al. 

Advanced Materials. 2023. DOI : 10.1002/adma.202300200.

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

F. Qaderi; T. Rosca; M. Burla; J. Leuthold; D. Flandre et al. 

Communications Materials. 2023. Vol. 4, num. 1, p. 34. DOI : 10.1038/s43246-023-00350-x.

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

C. Gastaldi; S. Kamaei; M. Cavalieri; A. Saeidi; I. Stolichnov et al. 

Ieee Electron Device Letters. 2023. Vol. 44, num. 4, p. 678 – 681. DOI : 10.1109/LED.2023.3249972.

Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation

D. E. Tranca; S. G. Stanciu; R. Hristu; A. M. Ionescu; G. A. Stanciu 

Applied Surface Science. 2023. Vol. 623, p. 157014. DOI : 10.1016/j.apsusc.2023.157014.

Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

R. Paul; V. Conti; M. Zamani; S. Escobar-Steinvall; H. Sanchez-Martin et al. 

Solar Energy Materials And Solar Cells. 2023. Vol. 252, p. 112194. DOI : 10.1016/j.solmat.2023.112194.

Conference Papers

Cryogenic Front-to-Back Coupling in FD-SOI for Tunable Qubits by Localized Metallic Back-Gate

F. Bersano; M. Ghini; I. Bouquet; E. Collette; N. Martinolli et al. 

2024. 50th IEEE European Solid-State Electronics Research Conference, Bruges, Belgium, 2024-09-09 – 2024-09-12. p. 165 – 168. DOI : 10.1109/ESSERC62670.2024.10719596.

Aptamer-Decorated Graphene Channel Array with Liquid-Gating for Sensing Cortisol Stress Hormone

A. Gilani; A. Saeidi; S. Sheibani; J. Longo; S. Kamaei et al. 

2024. IEEE BioSensors Conference, Cambridge, United Kingdom, 2024-07-28 – 2024-07-30. DOI : 10.1109/BioSensors61405.2024.10712663.

AC-Driven Aptamer-Decorated Graphene FET for Cortisol Detection

A. Gilani; A. Saeidi; J. Longo; Y. Sprunger; S. Kamaei et al. 

2024. IEEE Sensors, Kobe, Japan, 2024-10-20 – 2024-10-23. DOI : 10.1109/SENSORS60989.2024.10785129.

Quantum Dots Array on Ultra-Thin SOI Nanowires with Ferromagnetic Cobalt Barrier Gates for Enhanced Spin Qubit Control

F. Bersano; M. Aldeghi; E. Collette; M. Ghini; F. D. Palma et al. 

2023. 2023 IEEE Symposium on VLSI Technology and Circuits, Kyoto, Japan, 2023-06-11 – 2023-06-16. p. 1 – 2. DOI : 10.23919/VLSITechnologyandCir57934.2023.10185278.

Model-Based ISO 14971 Risk Management of EEG-Based Medical Devices

N. Yakymets; R. Zanetti; M. A. Ionescu; D. Atienza Alonso 

2023. 45th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), Sydney Australia, July 24-27, 2023. DOI : 10.1109/EMBC40787.2023.10340131.

Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron

N. Bidoul; T. Rosca; A. M. Ionescu; D. Flandre 

2023. IEEE 53rd European Solid-State Device Research Conference (ESSDERC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 81 – 84. DOI : 10.1109/ESSDERC59256.2023.10268509.

Ultra-High Sensitivity Silicon Nanowire Array Biosensor Based on a Constant-Current Method for Continuous Real-Time pH and Protein Monitoring in Interstitial Fluid

Y. C. Sprunger; L. Capua; T. Ernst; S. Barraud; A. M. Ionescu et al. 

2023. IEEE 49th European Solid-State Circuits Conference (ESSCIRC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 153 – 156. DOI : 10.1109/ESSCIRC59616.2023.10268731.

Subthreshold VO2 vertical switches for large-bandwidth millimeter-wave and sub-terahertz detection

F. Qaderi; Y. Horst; T. Blatter; M. Burla; D. Park et al. 

2022. 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Delft, NETHERLANDS, Aug 28-Sep 02, 2022. DOI : 10.1109/IRMMW.THz50927.2022.9895513.

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

S. Kamaei; A. Saeidi; X. Liu; C. Gastaldi; C. Moldovan et al. 

2022. 48th IEEE European Solid State Circuits Conference (ESSCIRC), Milan, ITALY, Sep 19-22, 2022. p. 161 – 164. DOI : 10.1109/ESSCIRC55480.2022.9911286.

Multi-Gate FD-SOI Single Electron Transistor for hybrid SET-MOSFET quantum computing

F. Bersano; F. De Palma; F. Oppliger; F. Braakman; I. Radu et al. 

2022. 48th IEEE European Solid State Circuits Conference (ESSCIRC), Milan, ITALY, 2022-09-19 – 2022-09-22. p. 49 – 52. DOI : 10.1109/ESSCIRC55480.2022.9911479.