Join the POWERlab

The POWERlab at EPFL develops novel semiconductor devices, including GaN and Diamond, based on a nanoscale design to exploit their unique properties and conceive new, drastically more efficient devices that outperform the state-of-the-art. Our research is multidisciplinary at the interface of power electronic devices and converters, RF communications and thermal sciences.

We are looking for excellent students and postdocs motivated to join our laboratory. Below are the open positions currently available:

PhD students and Postdocs

There are several positions available for PhD students and postdocs in areas below:

At the POWERlab, we develop novel semiconductor devices, based on Diamond and GaN, relying on a judicious device design to exploit their unique properties and conceive new, drastically more efficient devices that outperform the state-of-the-art.

We are looking for excellent and motivated candidates for a PhD or postdoc in the field of Diamond power devices. The candidate will pursue novel ideas based on concepts developed in our laboratory to tackle challenges in the field of efficient power electronics. Below are some relevant references:

The candidate will have the opportunity to work several aspects involved in demonstrating high-performance devices: device fabrication in cleanroom (relying on EPFL’s excellent cleanroom facilities), numerical simulations, device characterization (relying on the excellent facilities in the lab, for electrical, optical and thermal measurements). Most importantly, the candidate is encouraged to try new ideas and approaches.

IEEE 2019 : https://ieeexplore.ieee.org/abstract/document/8897660

ACS Appl. Mater. Interfaces 2021: https://pubs.acs.org/doi/abs/10.1021/acsami.1c08761

JAP 2019: https://aip.scitation.org/doi/abs/10.1063/1.5123615

Profile: The candidate is expected to have a solid background in semiconductor physics and electronics, with strong aptitude for performing experiments and device fabrication. Experience with diamond devices, device simulation and/or semiconductor growth is welcome.

What is offered: The selected candidate will be offered a fully-paid fellowship with very competitive salary and excellent conditions to excel in his/her research. https://www.epfl.ch/education/phd/doctoral-studies-structure/doctoral-students-salary/

Starting date: The ideal starting date would be as soon as possible.

How to apply: If you are interested, and have the correct profile for this position, please send your CV to [email protected], including publications (if any) and names of two references.

Microfluidic cooling of RF and power electronic devices
At the POWERlab, we develop novel semiconductor devices, including GaN and Diamond, based on a judicious device design to exploit their unique properties and conceive new, drastically more efficient devices that outperform the state-of-the-art. Our research is multidisciplinary at the interface of power electronic devices and converters, RF communications and thermal sciences.

We are looking for excellent and motivated candidates for a PhD in the field of Thermal management of GaN semiconductor electronic devices. The candidate will pursue novel ideas based on concepts developed in our laboratory, combining two-phase microfluidic cooling designed together with GaN electronics to tackle the important challenge of thermal management in the field of efficient RF and power electronics. Below are some relevant references and a youtube video:

Nature 2020: https://www.nature.com/articles/s41586-020-2666-1

Therminic 2020: https://ieeexplore.ieee.org/abstract/document/9420501

Youtube video: https://youtu.be/ht9Id4yOFdo

The candidate will have the opportunity to work several aspects involved in demonstrating high-performance devices: device fabrication in cleanroom (relying on EPFL’s excellent cleanroom facilities), numerical simulations, device characterization (relying on the excellent facilities in the lab, for microfluidic cooling, electrical, optical and thermal measurements). Most importantly, the candidate is encouraged to try new ideas and approaches.

Profile: The candidate is expected to have a solid background in thermal sciences, with strong aptitude for performing experiments and device fabrication. Experience with microfluidic cooling (single or two phase) is very welcome.

Starting date: The ideal starting date would be as soon as possible.

How to apply: If you are interested, and have the correct profile for this position, please send your CV to [email protected], including publications (if any) and names of two references.

PhD (or postdoc) position in THz electronic devices
At the POWERlab, we develop novel semiconductor devices, including GaN and Diamond, based on a judicious device design to exploit their unique properties and conceive new, drastically more efficient devices that outperform the state-of-the-art. Our research is multidisciplinary at the interface of power electronic devices and converters, RF communications and thermal sciences.

We are looking for excellent and motivated candidates for a PhD or postdoc in the field of THz electronic devices. The candidate will pursue novel ideas based on concepts of nanoplasma devices, metastructures and semiconductor concepts for RF to tackle the important challenge of THz gap. Below are some relevant references and a youtube video:

Nature 2020: https://www.nature.com/articles/s41586-020-2118-y

Youtube video: https://youtu.be/DKISJ4M_Tj0

The candidate will have the opportunity to work several aspects involved in demonstrating high-performance devices: device fabrication in cleanroom (relying on EPFL’s excellent cleanroom facilities), device simulations, device characterization (relying on the excellent facilities in the lab, for microfluidic, thermal and electrical measurements). Most importantly, the candidate is encouraged to try new ideas and approaches.

Profile: The candidate is expected to have a solid background in RF electronic devices or circuits, with strong aptitude for performing RF experiments, and building experiments. Experience with metastructures, plasmonics and/or RF electronic devices is very welcome.

Starting date: The ideal starting date would be as soon as possible.

How to apply: If you are interested, and have the correct profile for this position, please send your CV to [email protected], including publications (if any) and names of two references.

Postdoc in MOCVD growth of GaN semiconductors for power electronics
We are looking for a highly motivated postdoctoral fellow (or PhD student) to work on electronic devices based on III-Nitride semiconductors (GaN, AlGaN, AlN, etc.) for power electronic applications. The ultimate goal of this project is to investigate novel lateral and vertical power devices and apply them to efficient high power density converters.

Profile:
The ideal candidate should have solid experience on III-Nitride devices, MOCVD epitaxial growth for power electronics, and in materials characterization.

Candidates must hold PhD degree (or anticipate a PhD degree prior to starting the postdoc), or Master degree in case the candidate is applying for a PhD position, have a strong publication record and be very motivated to pursue high-level scientific research.

What is offered: The selected candidate will be offered a fully-paid fellowship with very competitive salary and excellent conditions to excel in his/her research.

Starting date: The ideal starting date would be as soon as possible.

How to apply: If you are interested, and have the correct profile for this position, please send your CV to [email protected], including publications (if any) and names of two references.

We are looking for excellent and motivated candidates for a PhD or postdoctoral fellow in the field of power electronics. The candidate will pursue novel ideas based on wide band gap devices for efficient high power density power converters. Below are some relevant references:

IEEE TPEL 2021: https://ieeexplore.ieee.org/abstract/document/9294072

IEEE TPEL 2022: https://ieeexplore.ieee.org/abstract/document/9627563

The candidate will have the opportunity to work several aspects involved in demonstrating high power density power converters: from characterization of device losses to converter design. Most importantly, the candidate is encouraged to try new ideas and approaches.

Profile: The candidate is expected to have a solid background in power electronics, with strong aptitude for performing experiments.

Starting date: The ideal starting date would be as soon as possible.

How to apply: If you are interested, and have the correct profile for this position, please send your CV to [email protected], including publications (if any) and names of two references.

Internship for external students:

For excellent and motivated external students, please contact Prof. Matioli for more information.