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2024

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

A. Floriduz; U. Choi; E. Matioli

Japanese Journal Of Applied Physics. 2024-06-03. Vol. 63, num. 6, p. 060904. DOI : 10.35848/1347-4065/ad5480.

2024

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

2023

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Electronic metadevices for terahertz applications

Measurement of WBG-based power supplies

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

2022

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

A perspective on multi-channel technology for the next-generation of GaN power devices

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

2021

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

GaN-based power devices: Physics, reliability, and perspectives

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

p-NiO junction termination extensions for GaN power devices

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Multi-channel nanowire devices for efficient power conversion

Kilowatt-range Picosecond Switching Based on Microplasma Devices

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Enhanced-DAB Converter: Comprehensive Design Evaluation

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)

Parallel PV Configuration with Magnetic-Free Switched Capacitor Module-Level Converters for Partial Shading Conditions

Microchannel-based Calorimeter for Rapid and Accurate Loss Measurements on High-efficiency Power Converters

Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs

Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films

Heterostructure design and field management in III-N high-electron mobility electronic devices

Diamond on GaN integration for power semiconductor devices with efficient thermal management

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Integrated electronic device with embedded microchannels and a method for producing thereof

Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

GaN vertical power devices on silicon substrates

Optimized kW-Range Boost Converter Based on Impulse Rectification with 52 kW/l and 98.6% Efficiency

2020

Small-Signal Approach for Precise Evaluation of Gate Losses in Soft-Switched Wide-Band-Gap Transistors

Calibration-Free Calorimeter for Sensitive Loss Measurements: Case of High-Frequency Inductors

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Output-Capacitance Hysteresis Losses of Field-Effect Transistors

Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Co-designing electronics with microfluidics for more sustainable cooling

Co-designing electronics with microfluidics for more sustainable cooling

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

Nanoplasma-enabled picosecond switches for ultrafast electronics

Negative Resistance in Cascode Transistors

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

Mixed Simulation-Experimental Optimization of a Modular Multilevel Switched Capacitors Converter Cell

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer