Thin films ‒ Center of MicroNanoTechnology CMi ‐ EPFL

LPCVD / Dry or wet oxidation / Alloying / Doping / Diffusion / Densification / Annealing / ALD

Equipement: – 6 x LPCVD tubes
– 1-1 polysilicon, amorphous silicon
– 1-2 stoichiometric silicon nitride Si₃N₄, low stress silicon nitride Si_xN_y
– 3-1 low temperature oxide (LTO), undoped oxide, PSG, BPSG, BSG
– 3-2 TEOS
– 4-1 stoichiometric silicon nitride Si₃N₄, low stress silicon nitride Si_xN_y
– 4-2 high temperature oxide (HTO), undoped oxide
– 5 x Oxidation tubes
– 2-1 dry oxide, densification
– 2-3 dry oxide, very clean processes for gate oxide
– 2-2 wet oxide
– 3-4 wet or dry oxide or annealing for non-microelectronic compatible processes
– 4-3 wet oxide
– 2 x Diffusion tubes
– 2-4 wet oxide, dopants diffusion, tube made of SiC for very high temperature processes (up to 1250°C)
– 4-4 annealing, tube made of SiC for very high temperature processes (up to 1250°C)
– 1 x Alloying tube
– 1-3 alloying of silicon and aluminum at junctions
– 1 x POCl₃ doping tube
– 1-4 “N” doping (Phosphore) of silicon and polysilicon

– RCA cleaning mandatory before oxidation & LPCVD

– Location: Zone 3
Documentation: – Manual
Responsibles (Process): D. Bouvet
A. Toros
R. Juttin
Responsibles (Maintenance): N. Roch
M. Marmelo
P. Madliger

Equipement: – RCA cleaning mandatory before oxidation & LPCVD
– Non CMOS compatible materials are prohibited in this bench
– Location: Zone 3
Documentation: – Manual
Responsibles (Process): D. Bouvet
G. Kumuntu
Responsibles (Maintenance): P. Madliger

Equipement: – MANDATORY : A dummy Si chip (available next to the tool) has to be loaded in the chamber during each deposition !
– Thermal deposition
– Plasma assisted deposition
– Ozone generator
– Deposition temperature from 80°C to 300°C
– Available materials : Al₂O₃, TiO₂, HfO₂, SiO₂, Pt
– Location: Zone 4
Documentation: – Manual
Responsibles (Process): D. Bouvet
A. Toros
Responsibles (Maintenance): N. Roch
M. Marmelo

Equipement: – MANDATORY : A dummy Si chip (available next to the tool) has to be loaded in the chamber for each deposition !
– Thermal deposition
– Plasma assisted deposition
– Ozone generator
– Deposition temperature from 100°C to 300°C
– Available materials : Al₂O₃, TiO₂, SiO₂, AlN, ZnO, Ni, NiO_x
– Location: Zone 4
Documentation: – Manual
Responsibles (Process): D. Bouvet
A. Toros
Responsibles (Maintenance): N. Roch
M. Marmelo

Equipement: – Thermal treatment from 200°C to 1200°C
– N₂, O₂, NH₃ and forming gas (5% H₂ in N₂) or vacuum
– From dies to 8” wafers
– Ramp up 100°C/s max
– Location: Zone 3
Documentation: – Manual
Responsibles (Process): D. Bouvet
A. Toros
Responsibles (Maintenance): N. Roch
M. Marmelo

Equipement: – For activation and crystallization processes
– Flash head : 6 lamps (3 lamp circuits, 2 lamps each)
– Power supply : 160 W each circuit
– Vacuum system with inert gas supply and IR heater (up to 880°C)
– Substrate size : 4 inch wafer (thickness max. 2mm)
– Pulse duration : 0.35 to 13.9 ms
– Max energy : 4 to 55 J/cm2
– Location: Zone 8
Documentation: – Manual
Responsibles (Process): A. Toros
Responsibles (Maintenance): N. Roch

PECVD

The ICP CVD is for the moment only accessible to LPQM lab members for development.

Equipement: – PlasmaPro 100 platform equiped with an Inductively Couple Plasma Chemical Vapor Deposition (ICP CVD) process module.
– 5kW ICP Plasma deposition source
– RF 600 W generator for etch
– Up to 400°C table temperature
– From 100mm to 200mm wafers
– Location: Zone 3
Documentation: Manual
Responsibles: B. Cuénod
R. Juttin
O. Feijo

Equipement: – Corial D250L platform equiped with a Plasma Enhanced Vapor Deposition reactor
– RF 13.56 Mhz generator
– Low Frequency generator
– up to 320°C
– From chips to 100 mm wafer
– Location : Zone 3
Documentation: Manual
Responsibles: B. Cuénod
R. Juttin
O. Feijo

Evaporation

Equipement: – 1 x e-beam gun (6 pockets)
– 3 x working distances (450mm / 350mm / 250mm)
– Plasma Ar/O₂ for substrate cleaning or activation prior deposition
– Up to 8 x 100 mm or 5 x 150 mm wafers
– Location: Zone 11
Documentation: – Manual
Responsibles: R. Juttin
G. Clerc
B. Cuénod
T. Tarasi

Equipement: – 1 x e-beam gun (6 pockets)
– 1 x ion source (Ar, O₂) for Ion Assisted Deposition (IAD)
– Chamber designed for lift-off evaporation (high distance source-substrates)
– Heaters (evaporation from room temperature and up to 200°C)
– Up to 8 x 100 mm or 4 x 150 mm wafers
– Location: Zone 4
Documentation: – Manual
Responsibles: R. Juttin
G. Clerc
B. Cuénod
T. Tarasi

The new evaporator arrival and its installation are scheduled in June/July 2024. Contact the tool responsibles below for more information.

Equipment: – 1 x e-beam gun (12 pockets)
– Chamber designed for lift-off evaporation (high distance source-substrates)
– 6 x 100mm or 150 mm wafers
– Location: Zone 6
Documentation: – Manual
Responsibles: B. Cuénod
R. Juttin
T. Tarasi

Equipement: – 2 x boat for thermal evaporation
– Location: BM 4231
Documentation: – Manual
Responsibles: The system is now under the responsibility of BIOS laboratory.

Contact: Felix Richter

Equipement: – 3 x boat for thermal evaporation
– Location: MC A3 205
Documentation: – Manual
Responsibles: The system is now under the responsibility of AQUA laboratory.

Contact: Ekin Kizilkan

Equipement: – 1 x Loadlock (Descum & Ion milling)
– 1 x Evaporation chamber
– 1 x Oxidation chamber
– System specially designed for Josephson junctions fabrication
– Location: Zone 19
Documentation: – Manual
Responsibles: R. Juttin
B. Cuénod
T. Tarasi

Sputtering

Equipement: – 2 x DC Magnetron
– 1 x pulsed DC Magnetron
– 1 x RF Magnetron
– 1 x RF-Etch for substrate cleaning prior deposition
– Heaters (sputtering from room temperature and up to 350°C)
– Location: Zone 4
Documentation: – Manual
Responsibles: R. Juttin
G. Clerc
B. Cuénod
T. Tarasi

Equipement: 5 x modules [+ Load lock & Transfer module]:
– N°2 – Oxides & Nitrides (3 x cathodes Ø 100 mm confocal,
RF/DC-pulsed)
– N°3 – UHV Ferromagnetic metals & Metals (4 x cathodes Ø 100mm confocal, RF/DC-pulsed + HIPIMS)
RF/DC-pulsed)
– N°4 – Dielectrics (1 x cathode Ø 250mm, planar,
RF-Sputtering)
– N°5 – UHV Semiconductors & Metals (4 x cathodes Ø 100mm confocal, RF/DC-pulsed + HIPIMS)
– N°6 – Nitrides (3 x cathodes Ø 100 mm confocal,
RF/DC-pulsed)

Process:
– Deposition at Room Temperature or High Temperature
– RF-Etch for substrate cleaning or activation prior deposition
– Up to 200 mm wafers

– Location: Zone 4
Documentation: – Manual
Responsibles: R. Juttin
B. Cuénod
G. Clerc
T. Tarasi

Equipement: – 2 x DC/RF Magnetron
– 4 x DC Magnetron
– 1 x Cold post (cold water cooling)
– 1 x Hot post (50°C – 400°C)
– RF-Etch (Ar/O₂) for substrate cleaning or activation prior deposition on both posts
– Location: Zone 11
Documentation: – Manual
Responsibles: R. Juttin
G. Clerc
B. Cuénod
T. Tarasi

Pulsed Laser Deposition

Equipement: – Pulsed Laser Deposition
– Up to 8 inches wafers (Target-dependent)
– 2 x SMP 800 Chambers
– 1 x Pulsed excimer laser (UV – 248 nm)
– Location: Zone 18
Documentation: – Manual
Responsibles: R. Juttin
T. Tarasi

Electroplating / Parylene coating

Equipement: – Copper electroplating
– Compatible with 100 mm wafers only
– Deposition rate : ~100-200 nm/min
– Location: Zone 19
Documentation: – Manual
– Plating solution datasheet
Responsibles: D. Bouvet
A. Toros

Equipement: – Any kind of wafers and samples coating
– Parylene C
– Biocompatible material
– Thickness range from 50nm up to 10um
– Room temperature and double side coating
– Conformal and stress free layer
– Acids, bases and solvents resistant layers
– Location: Zone 10
Documentation: – Manual
– Silanization
– Recristallization
Responsibles: C. Hibert
M. Marmelo