Etching

Ion Beam Etching

Equipement: – 100mm wafers (max 4mm thick)
– Argon ions 350mm broad-beam
– Large range energy capability (50V to 800V)
– High uniformity and high collimation
– Pure physical sputtering of any material
– Low temperature substrate fixture (<90°C)
– Secondary Ions Mass Spectroscopy
– Location: Zone 11
Documentation: – Manual
Responsibles: J. Pernollet
O. Aste
C. Hibert

Plasma Etching

Equipment: – Dual-Source ICP plasma etcher
– 100mm wafers (max 1mm thick), cassette loader
– Fluorine chemistry
– Electrostatic clamping
– Si bulk and thin films etching
– Deep Si etching (Bosch process)
– Notch free SOI processing
– Location: Zone 2
Documentation: – Manual
– Si etching SPC
Responsibles: J. Pernollet
O. Aste
C. Hibert
M. Chahid

Equipment: – ICP plasma etcher 100mm wafers (max 4.5mm thick)
– Fluorine chemistry
– Electrostatic clamping
– Non microelectronic compatible equipment
– Si bulk and thin films etching
– Deep Si etching (Bosch process)
– Notch free SOI processing
– Location: Zone 2
Documentation: – Manual
– Si etching SPC
Responsibles: J. Pernollet
O. Aste
C. Hibert
M. Chahid

Equipment: Samples must NOT have presence of any metallics, or traces of metallics (real or suspicion), even buried.
– ICP plasma etcher 100mm wafers
– Fluorine chemistry
– Electrostatic clamping
– Microelectronic compatible equipment
– SiO2 and Si3N4 thin films etching
– Location: Zone 2
Documentation: – Manual
– SiO2 etching SPC
Responsibles: J. Pernollet
O. Aste
M. Chahid

Equipment: – ICP plasma etcher 100mm wafers
– Fluorine chemistry
– Electrostatic clamping
– Non microelectronic compatible equipment
– SiO2 and Si3N4 thin films etching
– Deep SiO2 and glasses etching
– Location: Zone 2
Documentation: – Manual
– SiO2 etching SPC
Responsibles: J. Pernollet
O. Aste
C. Hibert
M. Chahid

Equipment: Samples must NOT have presence of any metallics, or traces of metallics (real or suspicion), even buried.
– DRM (Dipole Ring Magnet) – 100mm – RIE with magnetic field assistance
– Fluorine chemistry
– Electrostatic clamping
– Microelectronic compatible equipment
– SiO2 and Si3N4 thin films etching
– Location: Zone 2
Documentation: – Manual
– SiO2 etching SPC
Responsibles: J. Pernollet
O. Aste
C. Hibert
M. Chahid

Equipment: – ICP plasma etcher 100mm wafers
– Chlorine and Bromine chemistry
– Electrostatic clamping
– Microelectronic compatible equipment
– Metals etching
– Deep polymer eching
– Si, SiO2 and Si3N4 thin films etching
– Location: Zone 2
Documentation: – Manual
Responsibles: J. Pernollet
O. Aste
C. Hibert

Equipment: – ICP plasma etcher 100mm wafers
– Chlorine and Bromine chemistry
– Electrostatic clamping
– Microelectronic compatible equipment
– Metals etching
– Deep polymer eching
– Si, SiO2 and Si3N4 thin films etching
– Location: Zone 2
Documentation: – Manual
Responsibles: J. Pernollet
O. Aste
C. Hibert

Resist Strip and Descum

Equipment: – Barrel plasma asher
– Oxygen chemistry
– Microelectronic compatible equipment
– Polymer stripping
– Descum before wet etching
– Location: Zone 1
Documentation: – Manual
Responsibles: J. Pernollet
C. Hibert

Equipment: – Barrel plasma asher
– Oxygen chemistry
– Non microelectronic compatible equipment
– Polymer stripping
– Descum before wet etching
– Location: Zone 11
Documentation: – Manual
Responsibles: J. Pernollet
C. Hibert
M. Chahid

Equipment: – Barrel plasma asher
– Oxygen chemistry
– Microelectronic compatible equipment
– Polymer stripping
– Descum before wet etching
– Location: Zone 1
Documentation: – Manual
Responsibles: J. Pernollet
C. Hibert
M. Chahid

Equipment: – Downstream Plasma Asher
– Cassette loader, 100mm wafers ONLY
– Chemistry: Oxygen, forming gas
– Microelectronic compatible equipment
– Heated plate up to 300°C (clean backside required)
– High rate polymer ashing (wafer topside ONLY)
– Location: Zone 1
Documentation: – Manual
Responsibles: J. Pernollet
O. Aste

Equipment: – UVO cleaner
– Atmospheric treatment
– Tray loading, max 150 mm
– Low rate polymer removal
– Location: Zone 14
Documentation: – Manual
Responsibles: J. Pernollet

Gas Etching

Equipment: – 8 inches wafers to piece parts
– HF chemistry
– SiO₂ etch – Controllable etch rate (nm/min to um/min)
– Dry process without sticking issues
– Location: Zone 2
Documentation: – Manual
Responsibles: J. Pernollet
C. Hibert

Equipment: – Si isotropic etching
– 150mm and piece parts
– XeF₂ chemistry
– Pulsed mode or continuous flow
– Location: Zone 11
Documentation: – Manual
Responsibles: J. Pernollet
O. Aste
C. Hibert

Grinding / Polishing

Equipment: – Dielectrics, semiconductors and metals polishing and planarization
– Location: Zone 18/19
Documentation: – Manual
– Safety
Responsibles: D. Bouvet
A. Toros

Equipment: – Dielectrics and semiconductors polishing and planarization
– METAL CONTAMINATED WAFERS ARE FORBIDDEN !
– Location: Zone 18/19
Documentation: – Manual
– Safety
Responsibles: D. Bouvet
A. Toros

Equipment: – Post CMP Cleaning of 4”, 6” and 8” wafers
– Metal contaminated wafers can be processed with dedicated brushes, please contact staff
– Location: Zone 18/19
Documentation: – Manual
Responsibles: D. Bouvet
A. Toros

Equipment: – Silicon, III/V materials and glass types grinding
– Single wafers, stacked wafers and chips (from a few mm2 to full 8″ wafers)
– Frame mounting on UV-tape
– Disco DCS1440 atomizing cleaning
– Roughness < 100nm, TTV ~ 1micron
– Location: Zone 22
Documentation: – Manual
– Grinding request
Responsibles: J. Pernollet
C. Hibert

Wet Etching

Equipment: – 100, 150 mm wafers and piece parts
– Sulphuric acid with peroxide (100°C)
– Organic residue cleaning
– Location: Zone 2
Documentation: – Manual
– Safety
– Available holders
– Empty bottles
Responsibles: J. Pernollet
C. Hibert

Equipment: – 100, 150 mm wafers and piece parts
– Remover 1165 (70°C)
– Photoresist strip
– Location: Zone 2
Documentation: – Manual
– Safety
– Available holders
Responsibles: J. Pernollet
C. Hibert

Equipment: – 100, 150 mm wafers and piece parts
– HF and BHF chemistry
– SiO₂ and fused silica etch
– Pyrex and float glass etch
– Location: Zone 2
Documentation: – Manual
– Safety
– Available holders
Responsibles: J. Pernollet
C. Hibert

Equipment: – 100, 150 mm wafers and piece parts
– Aluminium etch
– Titanium etch (HF 1%)
– Reclaim (HF 50%)
– Polysilicon etch
– Location: Zone 2
Documentation: – Manual
– Safety
– Available holders
Responsibles: J. Pernollet
C. Hibert

Equipment: – 100, 150 mm wafers and piece parts
– 100 mm chuck to protect wafer back side
– KOH chemistry 40%/60°C
– Silicon anisotropic etch
– Location: Zone 18/19
Documentation: – Manual
– Protek protective stop layer
– Safety
– Available holders
Responsibles: J. Pernollet
C. Hibert

Equipment: – 100, 150 mm wafers and piece parts
– Supercritical point dryer to limit sticking issues
– Location: Zone 14
Documentation: – Manual
Responsibles: J. Pernollet
C. Hibert

Equipment: – 100 mm wafers and piece parts
– Multiple acids chemistry
– SiO₂, fused silica, Al₂O₃ etch
– Pyrex and float glass etch
– Al, Ti, Ni, Au, Cr, Cu, Pt etch
– Location: Zone 14
Documentation: – Manual
– Safety
– Available holders
– Empty bottles
Responsibles: J. Pernollet
C. Hibert

Equipment: – 100 mm wafers and piece parts
– Multiple bases chemistry
– Si etch
– RCA 1 cleaning
– Location: Zone 14
Documentation: – Manual
– Safety
– Available holders
– Empty bottles
Responsibles: J. Pernollet
C. Hibert

Equipment: – 100 mm wafers and piece parts
– Multiple solvents chemistry
– Silanisation prior parylene deposition
– Solvent cleaning
– Ultrasonic treatment
– Location: Zone 14
Documentation: – Manual
– Safety
– Available holders
– Empty bottles
Responsibles: J. Pernollet
C. Hibert