Ebeam lithography

Electron beam lithography system

Equipment: – 100 keV Thermal Field Emission Gun
– Gaussian Beam > 1 nm minimum pixel size
– > 20 nm mean + 3σ overlay accuracy
– 50 MHz Pattern Generator
– 50, 100, 150 mm wafers and piece parts
– Housed in a custom cleanroom 21 °C ± 0.1 °C
– Location: Zone 7
Documentation: – Manual
Responsibles: Z. Benes
M. Chahid

Equipment: – 100 keV Thermal Field Emission Gun
– Gaussian Beam > 1 nm minimum pixel size
– > 20 nm mean + 3σ overlay accuracy
– 125 MHz Pattern Generator
– 50, 100, 150 mm wafers and piece parts
– Housed in a custom cleanroom 21 °C ± 0.1 °C
– Location: Zone 1
Documentation: – Manual
Responsibles: Z. Benes
M. Chahid

Manual coater and Develop wet benches

Equipment: – Programmable coater for ebeam resists
– 50, 100, 150 mm wafers and piece parts
– Manual dispense
– Location: Zone 7
Documentation: – Manual
Responsibles: Z. Benes
M. Chahid

Equipment: – Wet bench for development of ebeam resists
– Ultrasonic bath
– Location: Zone 7
Documentation: – Manual
Responsibles: Z. Benes
M. Chahid

Equipment: – Wet bench for development of ebeam resists
– Location: Zone 7
Documentation: – Safety
– Manual
Responsibles: Z. Benes
M. Chahid

Hot plates and Dryer

Equipment: – Hotplate for dehydration and soft bake of ebeam resists
– Maximal temperature: 200 °C
– Location: Zone 7
Documentation: – Manual
Responsibles: Z. Benes
M. Chahid

Equipment: – Hotplate for dehydration and soft bake of ebeam resists
– Maximal temperature: 200 °C
– Location: Zone 7
Documentation: – M anual
Responsibles: Z. Benes
M. Chahid

Equipment: – Nitrogen atmosphere cabinet to keep labware dry
– Location: Zone 7
Documentation: – Manual
Responsibles: Z. Benes
M. Chahid