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Ion Beam Etching
Veeco Nexus IBE350, ion beam etcher, argon source
Equipement – 100mm wafers (max 4mm thick) – Argon ions 350mm broad-beam – Large range energy capability (50V to 800V) – High uniformity and high collimation – Pure physical sputtering of any material – Low temperature substrate fixture (<90°C) – Secondary Ions Mass Spectroscopy – Location: Zone 11 Documentation – Manual Responsibles J. Pernollet O. Aste C. Hibert
Plasma Etching
SPTS Rapier DSE, dry etcher, fluorine chemistry
Equipment – Dual-Source ICP plasma etcher – 100mm wafers (max 1mm thick), cassette loader – Fluorine chemistry – Electrostatic clamping – Si bulk and thin films etching – Deep Si etching (Bosch process) – Notch free SOI processing – Location: Zone 2 Documentation – Manual – Si etching SPC Responsibles J. Pernollet O. Aste C. Hibert M. Chahid
Alcatel AMS 200 SE, dry etcher, fluorine chemistry
Equipment – ICP plasma etcher 100mm wafers (max 4.5mm thick) – Fluorine chemistry – Electrostatic clamping – Non microelectronic compatible equipment – Si bulk and thin films etching – Deep Si etching (Bosch process) – Notch free SOI processing – Location: Zone 2 Documentation – Manual – Si etching SPC Responsibles J. Pernollet O. Aste C. Hibert M. Chahid
SPTS Synapse Dielectric Etcher, dry etcher, fluorine chemistry
SPTS APS Dielectric Etcher, dry etcher, fluorine chemistry
TEL Unity Me, dry etcher, fluorine chemistry
STS Multiplex ICP, dry etcher, chlorine and bromine chemistry
Equipment – ICP plasma etcher 100mm wafers – Chlorine and Bromine chemistry – Electrostatic clamping – Microelectronic compatible equipment – Metals etching – Deep polymer eching – Si, SiO2 and Si3N4 thin films etching – Location: Zone 2 Documentation – Manual Responsibles J. Pernollet O. Aste C. Hibert
Oxford PlasmaPro100 Cobra, dry etcher, chlorine and bromine chemistry
Equipment – ICP plasma etcher 100mm wafers – Chlorine and Bromine chemistry – Electrostatic clamping – Microelectronic compatible equipment – Metals etching – Deep polymer eching – Si, SiO2 and Si3N4 thin films etching – Location: Zone 2 Documentation – Manual Responsibles J. Pernollet O. Aste C. Hibert
Resist Strip and Descum
Oxford PRS900, RF plasma asher, oxygen
Equipment – Barrel plasma asher – Oxygen chemistry – Microelectronic compatible equipment – Polymer stripping – Descum before wet etching – Location: Zone 1 Documentation – Manual Responsibles J. Pernollet C. Hibert
Tepla 300, Microwave plasma asher, oxygen
Equipment – Barrel plasma asher – Oxygen chemistry – Non microelectronic compatible equipment – Polymer stripping – Descum before wet etching – Location: Zone 11 Documentation – Manual Responsibles J. Pernollet C. Hibert M. Chahid
Tepla GiGAbatch, Microwave plasma asher, oxygen
Equipment – Barrel plasma asher – Oxygen chemistry – Microelectronic compatible equipment – Polymer stripping – Descum before wet etching – Location: Zone 1 Documentation – Manual Responsibles J. Pernollet C. Hibert M. Chahid
ESI 3511, Microwave Downstream Plasma Asher
Equipment – Downstream Plasma Asher – Cassette loader, 100mm wafers ONLY – Chemistry: Oxygen, forming gas – Microelectronic compatible equipment – Heated plate up to 300°C (clean backside required) – High rate polymer ashing (wafer topside ONLY) – Location: Zone 1 Documentation – Manual Responsibles J. Pernollet O. Aste
Jelight UVO-cleaner
Equipment – UVO cleaner – Atmospheric treatment – Tray loading, max 150 mm – Low rate polymer removal – Location: Zone 14 Documentation – Manual Responsibles J. Pernollet
Gas Etching
SPTS uEtch, Hydrofluoric acid vapor phase etcher – Anhydrous 99% HF chemistry, " Dynamic etch " pulsed configuration, Variable pressure
Equipment – 8 inches wafers to piece parts – HF chemistry – SiO2 etch – Controllable etch rate (nm/min to um/min) – Dry process without sticking issues – Location: Zone 2 Documentation – Manual Responsibles J. Pernollet C. Hibert
SPTS Xactix X4 – XeF2 Silicon etching system
Grinding / Polishing
Steag Mecapol E 460, Chemical Mecanical Polishing (CMP)
Alpsitec E460 F, Chemical Mechanical Polishing (CMP, NEW TOOL)
Post CMP Cleaning System GnP Cleaner 428
Equipment – Post CMP Cleaning of 4”, 6” and 8” wafers – Metal contaminated wafers can be processed with dedicated brushes , please contact staff – Location: Zone 18/19 Documentation – Manual Responsibles D. Bouvet A. Toros
DAG810, automatic surface grinder
Equipment – Silicon, III/V materials and glass types grinding – Single wafers, stacked wafers and chips (from a few mm2 to full 8″ wafers) – Frame mounting on UV-tape – Disco DCS1440 atomizing cleaning – Roughness < 100nm, TTV ~ 1micron – Location: Zone 22 Documentation – Manual – Grinding request Responsibles J. Pernollet C. Hibert
Wet Etching
UFT Piranha, wet bench, organics/residues stripping
UFT Resist, wet bench, resist stripping
Plade Oxide, wet bench, oxide etch
Plade Metal, wet bench, metal etch
Plade Six Sigma, wet bench, anisotropic silicon etching (KOH)
Tousimis Automegasamdri 936C, CO2 supercritical point drying
Equipment – 100, 150 mm wafers and piece parts – Supercritical point dryer to limit sticking issues – Location: Zone 14 Documentation – Manual Responsibles J. Pernollet C. Hibert
Arias Acid, wet bench
Arias Base #1 & #2, wet benches
Solvent, wet bench