TEL Unity Me ‒ Center of MicroNanoTechnology CMi ‐ EPFL

Restrictions and Precautions

The TEL etcher must NOT be exposed to any metallics or even traces of metallics. Wafers that were once in contact with layers of metallics (even buried), or traces of metallics (real or suspicion), must NOT be loaded in this etcher.

! Wafers that were once processed in SPTS APS etcher are not allowed in TEL Unity etcher !

If any doubts, please get in touch with etching staff BEFORE proceeding.

RESERVATION RULES AND BOOKING FEES POLICY:
1. Maximum allowed booking per person between 9am and 5pm is 2 hours. It is still possible to get 4 consecutive hours from 7am to 11am or from 3pm to 7pm.
2. Reservation names must correspond to operators.

Introduction
DRM chamber
Photos gallery

I. Introduction

TEL Unity Me system is an automatic plasma etching production tool from Tokyo Electronic (TEL). As shown in figure 1, being available for process at CMi is the cassette loader C1 for 100mm wafers, one transfer chamber (T/C) and the process modules P1 for 100mm, the DRM -Dipole Ring Magnet- chamber. The chamber is dedicated to and its design is optimized for etching dielectrics (e.g. SiO₂ and Si_xN_y).

!! C2 cassette loader and P2 SCCM -Super Capacitively Coupled Module- process chamber are not available anymore and are offline !!

**Figure1**: top view of the TEL Unity Me etcher

II. DRM chamber for 100mm wafers processing

DRM is a RIE chamber (Reactive Ion Etching) with assistance of a magnetic field. It is structured as shown in the figure 2.

Available process gases: C₄F₈ [30 sccm], CF₄ [100 sccm], CHF₃ [100 sccm], CH₂F₂ [100 sccm], O₂ [30 sccm & 1000sccm], N₂ [100 sccm], Ar [1000 sccm].


Materials DUV42P BARC from Brewer	Gap (mm) / SH temp (°C) 47 / 40	Process name CMI.BARC	Chemistry CF₄	Mask material JSR M108Y JSR M35G	Etch rate (nm/min) JSR M35G DUV42P: 110 M108Y, M35G: 110 SiO₂: 170 Si: 85	Selectivity 1:1
Materials SiO₂	Gap (mm) / SH temp (°C) 47 / 40	Process name CMI.OX.PR @1100W	Chemistry C₄F₈ O₂ Ar	Mask material PR	Etch rate (nm/min) SiO₂: 415 @600W, SiO₂: 230 @500W, SiO₂: 200 @400W, SiO₂: 160 @300W, SiO₂: 125 @200W, SiO₂: 85	Selectivity >3:1
Materials SiO₂	Gap (mm) / SH temp (°C) 47 / 40	Process name CMI.OX.ASI	Chemistry CH₂F₂ C₄F₈ O₂ Ar	Mask material aSi	Etch rate (nm/min) SiO₂: 450 aSi: 35 JSR M108Y: 130	Selectivity 12:1
Materials Si₃N₄	Gap (mm) / SH temp (°C) 37 / 40	Process name CMI.SIN.OX	Chemistry CH₂F₂ O₂ Ar	Mask material HSQ PR	Etch rate (nm/min) Si₃N₄: 130 Si: 25 HSQ: 80 PR: 125	Selectivity >1:1
Materials Chamber Clean	Gap (mm) / SH temp (°C) 27 / XX according to etch process	Process name O2/CLN/XXC	Chemistry O₂	Mask material —	Etch rate (nm/min) —	Selectivity —

TEL Unity Me

Restrictions and Precautions

Contents

I. Introduction

II. DRM chamber for 100mm wafers processing

III. Photos gallery