Packaging – Miscellaneous

Wafer Bonding

EVG 810LT plasma activation equipment
Equipment
– Low temperature plasma activation
– 3 process gases: O2, N2 or Ar.
– Manual wafer loading/unloading
– Automated chamber closing/opening

– Location: Zone 6
Documentation
Equipment Description

EVG 810LT User Manual
Responsibles
A. Toros
J. Dorsaz
EVG 301 megasonic cleaning system & pre-bonding station
Equipment

– Aqueous-based (DI water) megasonic cleaning
– Spinner rotation up to 3000RPM
– DI-water flow rate up to 1.5 l/min
– Megasonic nozzle: 1 MHZ frequency, 30 – 60W output power
– Direct bonding (flat to flat) station
– IR-inspection (lamp/camera) module
– Class 1 mini environnment (HEPA filters + ionizer)

– Location: Zone 6
Documentation
Equipment Description

EVG 301 User Manual
Responsibles
A. Toros
J. Dorsaz
EVG 610 bond alignment system
Equipment
– Automated wedge compensation
– Bond alignment precision: ≤ ± 2,0 µm
– Infrared (IR) alignment option
– Unloading options: 1) EVG510 bond chuck, 2) loading slide (direct bonding)
– Additional operating modes: mask-alignment and exposure

– Location: Zone 6
Documentation
Equipment Description

EVG 610 – bond chuck (EVG510) preparation – User Manual
EVG 610 – silicon direct bond (SDB) mode – User Manual
EVG 610 – mask-aligner mode – User Manual
Responsibles
A. Toros
J. Dorsaz
EVG 510, wafer bonding system
Equipment
– Tool configurations for anodic, direct, or adhesive bonding
– Max. tool force 10kN.
– Max. temperature 550 °C.
– Chamber vacuum < 1E-05 mbar (turbo-pump).
– Max. voltage (anodic bonding) 1000V.

– Location: Zone 6
Documentation
Equipment Description

EVG 510 User Manual
Responsibles
A. Toros
J. Dorsaz

Die Bonding

Equipment
– Sub- micron placement accuracy
– Thermocompression and ultrasonic technologies
– Location: Zone 17
Documentation
Manual
Datasheet
Responsibles
A. Toros

Wire bonding

Equipment
– Aluminum 17.5um and 33um wedge-wedge bonding
– Gold 20um and 25um wedge-wedge and ball-wedge bondings
– Epoxy die attach
– Glob-top protection
– Location: Zone 17
Documentation
Manual
Data sheet
Guidelines
H20E-FC electrically conductive epoxy
H70E electrically insulating epoxy
H70E-2 thermally conductive glob-top
Responsibles
A. Toros
Equipment
– Aluminum 25um wedge-wedge bonding
– Gold 25um wedge-wedge bonding
– Location: Zone 17
Documentation
Manual
Datasheet
Demo Video
Responsibles
A. Toros

Dicing – Cutting

Equipment
– 100, 150 mm wafers
– Silicon, glass and pyrex wafers
– Other materials on demand
– Maximum thickness 1 mm on silicon and 2.4 mm on glass and pyrex
– Location: Zone 9
Documentation
Manual
Dicing request
Responsibles
A. Toros
Equipment
– High-speed cutting (up to 60 cm/s)
– Down to 500 µm precision
– Media thickness up to 250 µm
– Location: Zone 18/19
Documentation
Manual
Responsibles
J. Pernollet

Nanoimprint lithography

Equipment
Thermal NIL up to 250°C
UV NIL @365nm or 405nm (with temperature up to 200°C)
Imprint in vacuum (~1mbar)
Uniform pressure (up to 6.5bar) applied trough a membrane
Replicable structures : ~40nm up to 100um

– Location: Zone 13
Documentation
Equipment description
Responsibles
M. Pillon
J. Pernollet
Equipment
– Vertically air-pressurized cylinder
– Temperature up to 200 °C
– Imprinting intensity up to 3 kN
– Imprinting area up to 150×150 mm
– Location: Zone 11
Documentation
Manual
Responsibles
J. Pernollet

Miscellaneous

Equipment
– Automatic mixing machine
– Spin coating (100 mm wafers, microscope slides, 10×10 mm samples)
– Molds anti-sticking treatment
– Oxygen plasma surface activation
– Hole puncher on video camera
– Location: Zone 12
Documentation
Manual
Responsibles
J. Pernollet
C. Hibert
Equipment
Quick stick 135 is a wax used for temporary sticking of a wafer, or pieces of wafer, on a dummy wafer in order to make processing like photolithography or etching.

It is mainly used for:
– Photolithography on fragile wafer or wafer with holes or deep cavities on back side
– Dry etching on chips
Documentation
More information
User manual (Z13)
Responsibles
C. Hibert
M. Pillon
Equipment
– Hot rolls laminators
– Accurately controlled heat, pressure, speed
– Quick and easy wafer processing
– ALPHA940 and ALPHA920 dry films
– Location: back of Zone 1
Documentation
Manual
Responsibles
J. Pernollet
Equipment

Location: Zone 16
Documentation
Manual
Brochure
Responsible
J. Pernollet
Equipment
– Mono-sample loading, max 100mm
– Up to 1200°C
– Vacuum and Nitrogen environment
– Location: Zone 11
Documentation
Manual
Brochure
Responsibles
C. Hibert
B. Cuénod
Equipment
– Not microelectronic, not biocompatible compatible
– Temperature range: 150 to 1000°C
– Maximum heating and cooling rate : 100°C/min
– Chamber with gas extraction
– Sweeping gas available: N2 or forming gas (3% H2 in N2)
– Vacuum for purge cycles
– Sample size: 10 alumina 5inch square plates available, possibility to load 10 wafers 100mm in diam.
– Location: Zone 10
Documentation
Manual
Responsibles
C. Hibert
Equipment
– Not microelectronic, not biocompatible compatible vaccumed chamber: less than 5 mbar
– Temperature range: 50 to 450°C
– Maximum heating: 200°C/min
– Maximum cooling rate : 100°C/min
– Chamber with gas extraction
– Process chamber size: 147mm x 217mm height 40mm
– Location: Zone 10
Documentation
Manual
Responsibles
C. Hibert