The EVG bonding line consists of 4 tools, with 100mm and 150mm compatibility:
– EVG 810LT, low temperature plasma activation system – EVG 301, megasonic wafer cleaning system & pre-bonding station – EVG 610, bond (and mask) alignment system – EVG 510, wafer bonding system
EVG 810LT system capabilities:
– 3 process gases: O2, N2 or Ar. – Manual wafer loading/unloading – Automated chamber closing/opening – Location: Zone 6
EVG 301 megasonic cleaning system & pre-bonding station
Equipment
The EVG bonding line consists of 4 tools, with 100mm and 150mm compatibility:
– EVG 810LT, low temperature plasma activation system – EVG 301, megasonic wafer cleaning system & pre-bonding station – EVG 610, bond (and mask) alignment system – EVG 510, wafer bonding system
EVG 310 system capabilities:
– Aqueous-based cleaning (DI water) – Spinner rotation up to 3000RPM – DI-water flow rate up to 1.5 l/min – Megasonic nozzle: 1 MHZ frequency, 30 – 60W output power – Pre-bonding station with IR-inspection – Location: Zone 6
The EVG bonding line consists of 4 tools, with 100mm and 150mm compatibility:
– EVG 810LT, low temperature plasma activation system – EVG 301, megasonic wafer cleaning system & pre-bonding station – EVG 610, bond (and mask) alignment system – EVG 510, wafer bonding system
EVG 610 bond-aligner system capabilities:
– Automated wedge compensation – Bond alignment precision: ≤ ± 2,0 µm – Infrared (IR) alignment option – Other operating modes : mask-alignment and exposure, silicon direct (SD) bond – Location: Zone 6
The EVG bonding line consists of 4 tools, with 100mm and 150mm compatibility:
– EVG 810LT, low temperature plasma activation system – EVG 301, megasonic wafer cleaning system & pre-bonding station – EVG 610, bond (and mask) alignment system – EVG 510, wafer bonding system
EVG 510 bonding system capabilities:
– Tool configurations for anodic, direct, or adhesive bonding – Max. tool force 10kN. – Max. temperature 550 °C. – Chamber vacuum < 1E-04 mbar. – Max. voltage (anodic bonding) 1000V. – Location: Zone 6
– 100, 150 mm wafers – Silicon, glass and pyrex wafers – Other materials on demand – Maximum thickness 1 mm on silicon and 2.4 mm on glass and pyrex – Location: Zone 9
Thermal NIL up to 250°C UV NIL @365nm or 405nm (with temperature up to 200°C) Imprint in vacuum (~1mbar) Uniform pressure (up to 6.5bar) applied trough a membrane Replicable structures : ~40nm up to 100um
– Vertically air-pressurized cylinder – Temperature up to 200 °C – Imprinting intensity up to 3 kN – Imprinting area up to 150×150 mm – Location: Zone 11
Quick stick 135 is a wax used for temporary sticking of a wafer, or pieces of wafer, on a dummy wafer in order to make processing like photolithography or etching.
It is mainly used for: – Photolithography on fragile wafer or wafer with holes or deep cavities on back side – Dry etching on chips
– Hot rolls laminators – Accurately controlled heat, pressure, speed – Quick and easy wafer processing – ALPHA940 and ALPHA920 dry films – Location: back of Zone 1
– Not microelectronic, not biocompatible compatible – Temperature range: 150 to 1000°C – Maximum heating and cooling rate : 100°C/min – Chamber with gas extraction – Sweeping gas available: N2 or forming gas (3% H2 in N2) – Vacuum for purge cycles – Sample size: 10 alumina 5inch square plates available, possibility to load 10 wafers 100mm in diam. – Location: Zone 10
– Not microelectronic, not biocompatible compatible vaccumed chamber: less than 5 mbar – Temperature range: 50 to 450°C – Maximum heating: 200°C/min – Maximum cooling rate : 100°C/min – Chamber with gas extraction – Process chamber size: 147mm x 217mm height 40mm – Location: Zone 10
