Silicon Wafers
| Name Silicon test wafers, Si/100mm/SSP/Test | Diameter [mm] 100 ± 0.5 | Thickness [um] 525 ± 25 | Orientation <100> | Conductivity type, Dopant P or N Boron or Phosphorous | Resistivity range [ohm.cm] 0.1 – 100 |
| Name Silicon prime wafers, Si/100mm/DSP/1-10/TTV2 | Diameter [mm] 100 ± 0.2 | Thickness [um] 380 ± 10 | Orientation <100> | Conductivity type, Dopant P Boron | Resistivity range [ohm.cm] 1 – 10 |
| Name Silicon prime wafers, Si/100mm/DSP/HR | Diameter [mm] 100 ± 0.3 | Thickness [um] 525 ± 20 | Orientation <100> | Conductivity type, Dopant Intrinsic/Undoped | Resistivity range [ohm.cm] >10K |
| Name Silicon prime wafers, Si/100mm/SSP/0.1-0.5 | Diameter [mm] 100 ± 0.2 | Thickness [um] 525 ± 20 | Orientation <100> | Conductivity type, Dopant P Boron | Resistivity range [ohm.cm] 0.1 – 0.5 |
| Name Silicon prime wafers, Si/150mm/SSP/Test | Diameter [mm] 150 ± 0.2 | Thickness [um] 675 ± 20 | Orientation <100> | Conductivity type, Dopant P Boron | Resistivity range [ohm.cm] 15 – 25 |
SOI Wafers
WARNING : For SOI wafers, the Laser marking is on BACK SIDE.
Some of these wafers have an oxidized backside! Mind it if processing the backside.
| Name SOI wafers, SOI-380-1-10 | Diameter [mm] 100 ± 0.5 | SOI Layer Thickness [um] 10 ± 0.7 | Buried oxide Thickness [um] 1 ± 0.05 | Orientation <100> | Conductivity type, Dopant P Boron | Resistivity range [ohm.cm] 1 – 10 |
| Name SOI wafers, SOI 380-2-50 | Diameter [mm] 100 ± 0.5 | SOI Layer Thickness [um] 50 ± 0.7 | Buried oxide Thickness [um] 2 ± 0.05 | Orientation <100> | Conductivity type, Dopant P Boron | Resistivity range [ohm.cm] 1 – 10 |
| Name SOI wafers, SOI 380-2-100 | Diameter [mm] 100 ± 0.5 | SOI Layer Thickness [um] 100 ± 0.7 | Buried oxide Thickness [um] 2 ± 0.05 | Orientation <100> | Conductivity type, Dopant P Boron | Resistivity range [ohm.cm] 1 – 10 |
| Name SOI wafers, SOI 380-2-150 | Diameter [mm] 100 ± 0.5 | SOI Layer Thickness [um] 150 ± 0.7 | Buried oxide Thickness [um] 2 ± 0.05 | Orientation <100> | Conductivity type, Dopant P Boron | Resistivity range [ohm.cm] 1 – 10 |
| Name SOI wafers, SOI 380-2-200 | Diameter [mm] 100 ± 0.5 | SOI Layer Thickness [um] 200 ± 1 | Buried oxide Thickness [um] 2 ± 0.05 | Orientation <100> | Conductivity type, Dopant P Boron | Resistivity range [ohm.cm] 1 – 10 |
| Name SOI wafers*, SOI 625-1-1 | Diameter [mm] 100 ± 0.5 | SOI Layer Thickness [um] 1 ± 0.05 | Buried oxide Thickness [um] 1 ± 0.1 | Orientation <100> | Conductivity type, Dopant P Boron | Resistivity range [ohm.cm] 14 -22 |
| Name SOI wafers*, SOI 725-2-1-HR | Diameter [mm] 100 ± 0.5 | SOI Layer Thickness [um] 1 ± 0.05 | Buried oxide Thickness [um] 2 ± 0.02 | Orientation <100> | Conductivity type, Dopant Top Silicon: P, Boron Handle Silicon: N/A | Resistivity range [ohm.cm] Top Silicon: 8.5 -11.5 Handle Silicon: 750 – 1000 |
| Name SOI wafers*, SOI 725-2-0.34 | Diameter [mm] 100 ± 0.5 | SOI Layer Thickness [um] 0.34 ± 0.02 | Buried oxide Thickness [um] 2 ± 0.05 | Orientation <100> | Conductivity type, Dopant P Boron | Resistivity range [ohm.cm] 8.5 -11.5 |
| Name SOI wafers*, SOI 725-2-0.22 | Diameter [mm] 100 ± 0.5 | SOI Layer Thickness [um] 0.220 ± 0.020 | Buried oxide Thickness [um] 2 ± 0.05 | Orientation <100> | Conductivity type, Dopant P Boron | Resistivity range [ohm.cm] 8.5 -11.5 |
* These SOI wafers come from down-sizing of 150mm/200mm wafers. Left-over of various shape/size for piece-part/chip processing is also available.
* These wafers have an oxidized backside.
Glass Wafers
| Name Float glass wafers, FLOAT/DS | Diameter [mm] 100 0/-0.3 | Thickness [um] 550 ± 10 | Composition SiO2: 70.8%, Na2O: 13.9%, K 2O: 0.4%, CaO: 8.4%, MgO: 4.4%, Al2O3 : 1.5%, Fe2O3: 0.08%, SO3: 0.3% | Orientation none, amorphous | Log Resistivity [ohm.cm] 9.7 at 1000 Hz, 25 °C | Additionnal details |
| Name Borosilicate wafers, D263T/DS | Diameter [mm] 100 ± 0.2 | Thickness [um] 145 ± 15 | Composition Very close to Pyrex composition | Orientation none, amorphous | Log Resistivity [ohm.cm] 8.2, 250 °C 6.5, 350 °C | Additionnal details |
| Name Borofloat 33, Borofloat/DS | Diameter [mm] 100 ± 0.5 | Thickness [um] 500 ± 20 | Composition Very close to Pyrex composition | Orientation none, amorphous | Log Resistivity [ohm.cm] close to Pyrex | Additionnal details |
| Name Fused Silica Fused Silica/DS | Diameter [mm] 100 ± 0.5 | Thickness [um] 525 ± 50 | Composition SiO2: 100 %, | Orientation none, amorphous | Log Resistivity [ohm.cm] | Additionnal details TTV (total thickness variation) [µm] : 6 Polishing RMS [Ǻ] : 12 |
NB: Pyrex composition is SiO2: 81%, Na2O: 4%, Al 2O3: 2%, B2O3: 13% + traces elements.
Pyrex Log resistivity = 6.1 ohm.cm at 250 °C.