Materials

Silicon Wafers

Name Diameter [mm] Thickness [um] Orientation Conductivity type, DopantResistivity range [ohm.cm]
Silicon test wafers,
Si/100mm/SSP/Test 		100 ± 0.5525 ± 25 <100> P or N
Boron or Phosphorous 		0.1 – 100
Silicon prime wafers,
Si/100mm/DSP/1-10/TTV2 		100 ± 0.2 380 ± 10 <100> P
Boron   		1 – 10
Silicon prime wafers,
Si/100mm/DSP/HR		100 ± 0.3525 ± 20<100>Intrinsic/Undoped>10K
Silicon prime wafers,
Si/100mm/SSP/0.1-0.5 		100 ± 0.2 525 ± 20 <100> P
Boron		0.1 – 0.5
Silicon prime wafers,
 Si/150mm/SSP/Test 		150 ± 0.2 675 ± 20 <100> P
Boron 		15 – 25

SOI Wafers

WARNING : For SOI wafers, the Laser marking is on BACK SIDE.

Some of these wafers have an oxidized backside! Mind it if processing the backside.  

Name Diameter [mm] SOI Layer
Thickness [um] 		Buried oxide
Thickness [um] 		Orientation Conductivity type, Dopant Resistivity range [ohm.cm]
SOI wafers,
SOI-380-1-10 		100 ± 0.510 ± 0.7 1 ± 0.05 <100>P
Boron		1 – 10
SOI wafers,
SOI 380-2-50 		100 ± 0.5 50 ± 0.7 2 ± 0.05 <100> P
Boron 		1 – 10
SOI wafers,
SOI 380-2-100 		100 ± 0.5 100 ± 0.7 2 ± 0.05 <100> P
Boron 		1 – 10
SOI wafers,
SOI 380-2-150 		100 ± 0.5 150 ± 0.7
2 ± 0.05 		<100> P
Boron 		1 – 10
SOI wafers,
SOI 380-2-200 		100 ± 0.5 200 ± 1 2 ± 0.05 <100> P
Boron 		1 – 10
SOI wafers*,
SOI 625-1-1 		100 ± 0.5 1 ± 0.05 1 ± 0.1 <100> P
Boron 		14 -22
SOI wafers*,
SOI 725-1-1-HR 		100 ± 0.5 1 ± 0.02 1 ± 0.1 <100> Top Silicon: P, Boron
Handle Silicon: N/A 		Top Silicon: 8.5 -11.5
Handle Silicon: 750 – 1000
SOI wafers*,
SOI 725-2-0.34 		100 ± 0.5 0.34 ± 0.02 2 ± 0.05 <100> P
Boron 		8.5 -11.5
SOI wafers*,
SOI 725-2-0.22 		100 ± 0.5 0.220 ± 0.020 2 ± 0.05 <100> P
Boron 		8.5 -11.5

* These SOI wafers come from down-sizing of 150mm/200mm wafers. Left-over of various shape/size for piece-part/chip processing is also available.

* These wafers have an oxidized backside.

Glass Wafers

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NameDiameter [mm] Thickness [um]CompositionOrientation Log Resistivity [ohm.cm]Additionnal details
Float glass wafers,
FLOAT/DS		100  0/-0.3 550 ± 10 SiO2: 70.8%, Na2O: 13.9%, K 2O: 0.4%, CaO: 8.4%, MgO: 4.4%, Al2O3 : 1.5%, Fe2O3: 0.08%, SO3: 0.3% none, amorphous 9.7 at 1000 Hz, 25 °C
Borosilicate wafers,
D263T/DS 		100 ± 0.2 145 ± 15 Very close to Pyrex composition none, amorphous 8.2, 250 °C
6.5, 350 °C
Borofloat 33,
Borofloat/DS 		100 ± 0.5 500 ± 20 Very close to Pyrex composition none, amorphous close to Pyrex
Fused Silica
Fused Silica/DS		100 ± 0.5 525 ± 50 SiO2: 100 %, none, amorphous TTV (total thickness variation) [µm] : 6
Polishing RMS [Ǻ] : 12

NB: Pyrex composition is SiO2: 81%, Na2O: 4%, Al 2O3: 2%, B2O3: 13% + traces elements.
Pyrex Log resistivity = 6.1 ohm.cm at 250 °C.