Table of content
The following document lists all the chemical ancillary products used for automatic and manual photolithography processes, in Zone 1, Zone 5, Zone 6, Zone 12 and Zone 13 of the cleanroom.
If you are looking for the list of photoresists or any chemicals for spincoating, you can find it here.
Important: The safety datasheet (SDS) and standard operating procedures (SOP) of all chemical products used in the cleanroom is available in the restricted area: https://cmiaccess.epfl.ch/restricted/indexWP.php
Cleaning & Stripping
Solvent
SVC-14 is based on dimethyl sulphoxide (DMSO). It performs similarly well as remover to NMP and is harmless in terms of occupational safety. Optimal for resist stripping, especially in liftoff process.
Location :
-1 : Plade Solvent (Z1)
+1 : Arias Lift-off (Z12)
Compatibility :
- Water
- IPA
Bath temperature : max 80°C
Datasheet : TDS SVC-14
Safety : No classification
NMP (1-methyl-2-pyrrolidone) is a very suitable solvent for removing photoresist coatings. The very low vapour pressure of NMP allows it to be heated to 80°C in order to remove even more cross-linked photoresist layers.
As NMP is classified as toxic and teratogenic, alternatives such as DMSO should be considered.
Location :
-1 : Plade Solvent (Z1)
+1 : Arias Lift-off (Z12)
Compatibility :
- Water
- IPA
Bath temperature : max 80°C
Datasheet : TDS Remover1165
Safety :
 |
|
| H360d | H315, H319, H335 |
- Based on oxalic acid dihydrate (<2.5%)
- Safe & environment-friendly stripping solution
- Work well with : negative, thick positive and chemically amplified photoresists
- High metal compatibility
- Not compatible with GaAs
Location :
-1 : –
+1 : Arias Solvent (Z13)
Compatibility :
- Water
Bath temperature : max 80°C
Datasheet : TDS Technistrip Ni555
Safety : No classification
Base
- TMAH-based (<2.5%)
- Works well with highly crosslinked photoresists (e.g. through dry etching),
- Works with other polymers: BCB, polyimide (uncured)
- Not compatible with alkaline sensitve materials (Al, Cu, Ni, Ta/TaN, Ti/TiN)
Location :
-1 : –
+1 : Arias Base (Z13)
Compatibility :
- Water
Bath temperature : not available at CMi
Datasheet : TDS Technistrip P1316
Safety :
|
 |
| H371, H373 | H341, H318, H412 |
Development
Solvent
Base
AZ 726 MIF is a metal ion-free, surfactant enhanced 0.26N TMAH (2.38%) developer solution optimized for puddle development processes.
It should be used at room temperature in puddle, spray, or immersion mode. It does not require additional dilution.
Location :
-1 : ACS200 (Z1), EVG150 (Z6)
+1 : Arias Base (Z13)
Datasheet : TDS AZ 726MIF
Safety :
 |
|
|
| H302 | H371, H373 | H290, H311, H314 |
AZ 400K is a potassium-based buffered developer solution that provides high throughput and contrast, particularly for thick photoresist film, such as AZ 10XT.
For optimal photoresist development, AZ 400 K is diluted with DI water with ratio between 1:3 (high speed) and 1:4 (high contrast).
Location :
-1 : ACS200 (Z1)
+1 : Arias Base (Z13)
Datasheet : TDS AZ 400K
Safety :
|
|
| H361d | H290, H314 |
AZ 351B is a sodium-based buffered developer solution that provides high contrast and aspect ratio with almost any novolak-based positive photoresist. In CMI, it is used for the development of the AZ 1505 photoresist on Cr blanks.
For optimal photoresist development, AZ 351B is diluted with DI water with ratio between 1:3.5 (high speed) and 1:5 (high contrast).
Location :
-1 : Hamatech HMR900 (Z6)
+1 : Arias Base (Z13)
Datasheet : TDS AZ 351B
Safety :
|
|
| H360fd | H290, H318 |
AZ Developer is an alkaline developer solution based on sodium metasilicate and phosphate that is optimised for minimal aluminium erosion. It also attacks many other alkaline-sensitive materials (copper, …) far less than other aqueous alkaline developers.
For optimal photoresist development, AZ Developer is diluted with DI water with ratio between 1:1 ratio.
Location :
-1 : EVG 150 (Z6)
+1 : Arias Base (Z13)
Datasheet : TDS AZ Developer
Safety :
|
|
| H319 |
Primers
Hexamethyldisilazane (HMDS) is the an industry standard organosilane that promotes the adhesion of photoresists to Si, SiO2, Si3N4.
Due to its toxicity, it is applied in vapor form in a vacuum oven to prevent any safety risks.
Location :
-1 : ACS200 (Z1), YES 310TA (Z1), EVG150 (Z6), TEL Act 8 (Z5)
+1 : ATMsse VB20 (Sawatec SM200 – PR, Z13)
Safety :
 |
|
|
| H225 | H302 | H311, H314, H331 |
Adhesion promoter for polyimide films to Si, SiO2, TiO2, Si3N4. VM652 is a solution of an organosilane, (3-aminopropyl)tryethoxysilane (APTES), highly diluted in an organic solvent, 2-Methoxy-1-Propanol (PGME), that is suitable application by spincoating and drying.
Location :
-1 : Sawatec LSM-200 Polymide (Z6)
+1 : –
Safety :
|
|
| H226 | H336 |
Adhesion promoter for Cyclotene (BCB) and Su8 films to Si, SiO2, Si3N4. AP3000 is a solution of a proprietary organosilane, highly diluted in an organic solvent, 2-Methoxy-1-Propanol (PGME), that is suitable application by spincoating and drying.
Location :
-1 : –
+1 : Sawatec LSM-250 MISC (Z13)
Safety :
|
|
| H226 | H336 |