Cold wall chamber furnaces 4-inch (100 mm)
Applications
RTA (Rapid Thermal Annealing )
RTO (Rapid thermal oxidation )
Diffusion, contact annealing
Compound semiconductor annealing
Specifications
4-inch wafer capability
Stainless steel cold wall chamber technology:
High process reproducibility
Ultra clean and contamination-free environment.
A high vacuum version (10-6 mbar) is available
Pyrometer control
Fast digital PID temperature controller
Edge pyrometer viewport insures enhanced temperature control of the susceptor for compound
semiconductors and small samples.
Performance & characteristics
Temperature range: RT to 1000°C
Ramp rate up to 200°C/s (only max 50°C/s using Carbon plate)
Cooling rate : without
Gas mixing possible with mass flow controllers up to 2000 sccm ( (Nitrogen, Oxygen, Formiergaz N2/H2 92/8%)
Vacuum range : Atmosphere to 2.10-5 mbar
Maximum step duration
| Temperature | Maximum duration |
| 1000°C | 12 mn |
| 900°C | 60 mn |
| ˂800°c | 3 hours |
—————————————————————————————–