Cold wall chamber furnaces 4-inch (100 mm) and 6-inch (150 mm) versions
Applications
RTA (Rapid Thermal Annealing )
RTO (Rapid thermal oxidation )
Diffusion, contact annealing
Compound semiconductor annealing
Specifications
4-inch and 6-inch wafer capability
Floor standing system for reduced footprint
High reliability and low cost of ownership
Stainless steel cold wall chamber technology:
High process reproducibility
Ultra clean and contamination-free environment.
High cooling rates and low memory effect
A high vacuum version (10-6 mbar) is available
Pyrometer and thermocouple control
Fast digital PID temperature controller
Edge pyrometer viewport insures enhanced temperature control of the susceptor for compound
semiconductors and small samples.
Performance & characteristics
Temperature range: RT to 1000°C
Ramp rate up to 200°C/s (only max 50°C/s using Carbon plate)
Cooling rate : without
Gas mixing capability with mass flow controllers (Nitrogen, Oxygen, Formiergaz)
Vacuum range: Atmosphere to 2.10-5 mbar
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