PTSA ICP plasma etcher SI 500 (500591)
Description
The SI 500 has been developed for high rate and low damage plasma etch processes, especially in III-V and microoptical applications.
Application
- Etching of Si3N4, SiO2, Si
- Microelectronic compatible equipment
- DLC deposition
It is characterized by
- High etch rate
- Low damage
- High aspect ratio
- Superior homogeneity
- (P)lanar (T)riple (S)piral (A)ntenna PTSA source
- Remote field control via serial field bus
- SENTECH’s plasma process systems operating software
- Through-the-wall installation
- Interferometric endpoint detection and etch depth measurement
System Configuration
- PTSA ICP source (13.56 MHz, 1200 W) with integrated automatic matching network
- RF bias (13.56 MHz, 600 W)
- Available gaz in the chamber: Ar, O2, CF4, CHF3, SF6, H2, N2, C4H6, C2H4, CH4
- Circular gas inlet integrated into the PTSA source
- High speed pumping system with gas flow independent pressure control
- Vacuum load lock with pick-and-place
- Insulated, cooled and heated (20°C up to 250°C) electrode for small piece of wafer to max full 4 Inches wafer
- He-backside cooling, mechanical clamping
- dynamic temperature control
- Remote field control via serial field bus
- SENTECH’s plasma process systems operating software
Features
- Automated and manual process control
- Recipe controlled etch processes
- Intelligent process control by jumps, loops, and calls in recipes
- Different access levels, advanced user management
- Data logging
- LAN and internet access for remote servicing